Data Sheet

BUK9Y27-40B
N-channel TrenchMOS logic level FET
Rev. 04 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for logic level gate drive
sources
„ Q101 compliant
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V loads
„ General purpose power switching
„ Automotive systems
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max Unit
VDS
drain-source
voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
40
V
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 4
-
-
34
A
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
59.4 W
VGS = 5 V; ID = 15 A;
Tj = 25 °C; see Figure 12;
see Figure 13
-
22
27
mΩ
VGS = 10 V; ID = 15 A;
Tj = 25 °C; see Figure 12
-
18
24
mΩ
Static characteristics
RDSon
drain-source
on-state
resistance
BUK9Y27-40B
NXP Semiconductors
N-channel TrenchMOS logic level FET
Table 1.
Symbol
Quick reference data …continued
Parameter
Conditions
Min
Typ
Max Unit
-
-
39
mJ
-
4.2
-
nC
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 34 A; Vsup ≤ 40 V;
drain-source
RGS = 50 Ω; VGS = 5 V;
avalanche energy Tj(init) = 25 °C; unclamped
Dynamic characteristics
QGD
gate-drain charge VGS = 5 V; ID = 15 A;
VDS = 32 V; see Figure 14
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
S
source
Simplified outline
2
S
source
3
S
source
4
G
gate
mb
D
mounting base; connected to
drain
Graphic symbol
D
mb
G
mbb076
S
1 2 3 4
SOT669 (LFPAK)
3. Ordering information
Table 3.
Ordering information
Type number
BUK9Y27-40B
BUK9Y27-40B
Product data sheet
Package
Name
Description
LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
Version
© NXP B.V. 2010. All rights reserved.
2 of 14
BUK9Y27-40B
NXP Semiconductors
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
40
V
VDGR
drain-gate voltage
RGS = 20 kΩ
-
-
40
V
VGS
gate-source voltage
ID
drain current
-15
-
15
V
Tmb = 25 °C; VGS = 5 V; see Figure 1;
see Figure 4
-
-
34
A
Tmb = 100 °C; VGS = 5 V; see Figure 1
-
-
24
A
IDM
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed;
see Figure 4
-
-
136
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
-
59.4
W
Tstg
storage temperature
-55
-
175
°C
Tj
junction temperature
-55
-
175
°C
Source-drain diode
IS
source current
Tmb = 25 °C
-
-
34
A
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
-
-
136
A
-
-
39
mJ
-
-
-
J
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 34 A; Vsup ≤ 40 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped
EDS(AL)R
repetitive drain-source
avalanche energy
see Figure 3
[1]
[1][2][3]
[4]
Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
[2]
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3]
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[4]
Refer to application note AN10273 for further information.
BUK9Y27-40B
Product data sheet
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Rev. 04 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
3 of 14
BUK9Y27-40B
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aac519
40
003aab844
120
ID
(A)
Pder
(%)
30
80
20
40
10
0
0
0
Fig 1.
50
100
0
150
200
Tmb (°C)
50
100
150
200
Tmb (°C)
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aac498
102
IAL
(A)
(1)
10
(2)
1
(3)
10-1
10-3
Fig 3.
10-2
10-1
1
tAL (ms)
10
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK9Y27-40B
Product data sheet
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Rev. 04 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
BUK9Y27-40B
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aac619
103
Limit RDSon = VDS / ID
ID
(A)
102
10μ s
100μ s
10
1ms
DC
10ms
100ms
1
10-1
1
Fig 4.
10
102
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
see Figure 5
-
-
2.53
K/W
003aac483
10
Zth (j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
10-1
δ=
P
tp
T
0.02
single shot
t
tp
T
10-2
10-6
Fig 5.
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration.
BUK9Y27-40B
Product data sheet
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Rev. 04 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
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BUK9Y27-40B
NXP Semiconductors
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
36
-
-
V
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
40
-
-
V
VGS(th)
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10; see Figure 11
1.1
1.5
2
V
VGSth
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10; see Figure 11
0.5
-
-
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10; see Figure 11
-
-
2.3
V
IDSS
drain leakage current
VDS = 40 V; VGS = 0 V; Tj = 25 °C
-
0.02
1
µA
VDS = 40 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
IGSS
gate leakage current
VDS = 0 V; VGS = 15 V; Tj = 25 °C
-
2
100
nA
VDS = 0 V; VGS = -15 V; Tj = 25 °C
-
2
100
nA
VGS = 5 V; ID = 15 A; Tj = 25 °C;
see Figure 12; see Figure 13
-
22
27
mΩ
VGS = 4.5 V; ID = 15 A; Tj = 25 °C
-
-
30
mΩ
VGS = 5 V; ID = 15 A; Tj = 175 °C;
see Figure 13
-
-
57
mΩ
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 12
-
18
24
mΩ
ID = 15 A; VDS = 32 V; VGS = 5 V;
see Figure 14
-
11
-
nC
-
2.5
-
nC
-
4.2
-
nC
-
719
959
pF
-
146
175
pF
-
83
114
pF
-
14.5
-
ns
-
35
-
ns
RDSon
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
40
-
ns
tf
fall time
-
24
-
ns
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
VDS = 30 V; RL = 2 Ω; VGS = 5 V;
RG(ext) = 10 Ω
Source-drain diode
VSD
source-drain voltage
IS = 15 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
-
0.85
1.2
V
trr
reverse recovery time
-
30
-
ns
Qr
recovered charge
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V
-
35
-
nC
BUK9Y27-40B
Product data sheet
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Rev. 04 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
6 of 14
BUK9Y27-40B
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aac871
100
ID
(A)
10
15
003aac873
20
ID
(A)
7
80
15
5
4.5
60
4
10
3.5
40
3
Tj = 175 °C
5
20
Tj = 25 °C
2.5
VGS (V) = 2
0
0
0
Fig 6.
2
4
6
8
VDS (V)
10
Output characteristics: drain current as a
function of drain-source voltage; typical values.
003aac878
25
0
Fig 7.
1
2
3
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
003aac872
100
4
RDSon
(mΩ)
80
gfs
(S)
24
VGS (V)
4.5
5
7
23
60
22
40
21
20
3
3.5
10
VGS (V) = 15
20
0
0
Fig 8.
5
10
15
ID (A)
20
Forward transconductance as a function of
drain current; typical values.
BUK9Y27-40B
Product data sheet
0
Fig 9.
20
40
60
80
ID (A)
100
Drain-source on-state resistance as a function
of drain current; typical values.
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Rev. 04 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
7 of 14
BUK9Y27-40B
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aab986
2.5
003aab987
10−1
ID
(A)
VGS(th)
(V)
2.0
10−2
max
min
1.5
min
1.0
typ
max
10−3
typ
10−4
10−5
0.5
0.0
−60
10−6
0
60
120
0
180
1
2
Tj (°C)
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
003aac877
40
3
VGS (V)
03nb25
2.4
a
RDSon
(mΩ)
30
1.6
20
0.8
10
0
4
8
12
VGS (V)
16
Fig 12. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
BUK9Y27-40B
Product data sheet
0
−60
0
60
120
180
Tj (°C)
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
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Rev. 04 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
8 of 14
BUK9Y27-40B
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aac874
5
003aac876
104
VGS
(V)
C
(pF)
4
VDS = 14V
Ciss
103
VDS = 32V
3
Coss
2
102
Crss
1
0
0
4
8
QG (nC)
10
10-1
12
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
1
10
VDS (V)
102
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
003aac875
50
IS
(A)
40
30
20
Tj = 175 °C
10
Tj = 25 °C
0
0
0.3
0.6
0.9
VSD (V)
1.2
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
BUK9Y27-40B
Product data sheet
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N-channel TrenchMOS logic level FET
7. Package outline
Plastic single-ended surface-mounted package (LFPAK); 4 leads
A2
A
E
SOT669
C
c2
b2
E1
b3
L1
mounting
base
b4
D1
D
H
L2
1
2
3
e
4
w M A
b
1/2
X
c
e
A
(A 3)
A1
C
θ
L
detail X
y C
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
A1
A2
A3
b
b2
1.20 0.15 1.10
0.50 4.41
0.25
1.01 0.00 0.95
0.35 3.62
b3
b4
2.2
2.0
0.9
0.7
c
D (1)
c2
D1(1)
E(1) E1(1)
max
0.25 0.30 4.10
4.20
0.19 0.24 3.80
5.0
4.8
3.3
3.1
e
H
L
L1
L2
w
y
θ
1.27
6.2
5.8
0.85
0.40
1.3
0.8
1.3
0.8
0.25
0.1
8°
0°
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
SOT669
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-10-13
06-03-16
MO-235
Fig 17. Package outline SOT669 (LFPAK)
BUK9Y27-40B
Product data sheet
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N-channel TrenchMOS logic level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK9Y27-40B_4
20100407
Product data sheet
-
BUK9Y27-40B_3
Modifications:
BUK9Y27-40B_3
BUK9Y27-40B
Product data sheet
•
Status changed from objective to product.
20100216
Objective data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
BUK9Y27-40B_2
© NXP B.V. 2010. All rights reserved.
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BUK9Y27-40B
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N-channel TrenchMOS logic level FET
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BUK9Y27-40B
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. The product is not designed, authorized or warranted to be
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of an NXP Semiconductors
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. NXP Semiconductors accepts no
liability for inclusion and/or use of NXP Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in the
Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
12 of 14
BUK9Y27-40B
NXP Semiconductors
N-channel TrenchMOS logic level FET
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
Nexperia, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug,
TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BUK9Y27-40B
Product data sheet
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Rev. 04 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
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N-channel TrenchMOS logic level FET
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 7 April 2010
Document identifier: BUK9Y27-40B
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