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Analog Power
AM100N20-40FP
N-Channel 200-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
VDS (V)
200
PRODUCT SUMMARY
rDS(on) (mΩ)
40 @ VGS = 10V
ID (A)
100a
Typical Applications:
Hot Swap Inrush Limit Circuits
Uninterruptible Power Supplies and Inverters
Motor Speed Controls
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
VDS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
a
TC=25°C
ID
100
Continuous Drain Current
IDM
Pulsed Drain Current b
400
a
TC=25°C
IS
100
Continuous Source Current (Diode Conduction)
a
T
=25°C
P
500
Power Dissipation
C
D
TJ, Tstg -55 to 175
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
c
Symbol Maximum
RθJA
40
RθJC
0.29
Units
V
A
A
W
°C
Units
°C/W
Notes
a.
Package Limited
b.
Pulse width limited by maximum junction temperature
c.
Surface Mounted on 1” x 1” FR4 Board.
© Preliminary
1
Publication Order Number:
DS_AM100N20-40FP_1A
Analog Power
AM100N20-40FP
Electrical Characteristics
Parameter
Symbol
Gate-Source Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage a
ID(on)
rDS(on)
gfs
VSD
Test Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±20 V
VDS = 160 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VDS = 15 V, ID = 20 A
IS = 50 A, VGS = 0 V
Min
Typ
Max
1
±100
1
10
125
40
24
0.97
Unit
V
nA
uA
A
mΩ
S
V
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS = 100 V, VGS = 10 V,
ID = 20 A
VDS = 100 V, RL = 5 Ω,
ID = 20 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 Mhz
153
33
60
55
48
189
48
8242
410
332
nC
ns
pF
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out
of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary
in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL
products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation
where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application,
Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated
with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part.
APL is an Equal Opportunity/Affirmative Action Employer.
© Preliminary
2
Publication Order Number:
DS_AM100N20-40FP_1A
Analog Power
AM100N20-40FP
Typical Electrical Characteristics
0.08
25
5V
20
0.06
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
TJ = 25°C
5.5V
0.04
6V,8V,10V
0.02
15
10
5
0
0
0
5
10
15
0
20
ID-Drain Current (A)
4
6
8
VGS - Gate-to-Source Voltage (V)
1. On-Resistance vs. Drain Current
2. Transfer Characteristics
0.25
100
TJ = 25°C
ID = 20A
TJ = 25°C
0.2
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
2
0.15
0.1
0.05
0
10
1
0.1
0.01
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1
1.2
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
20
18000
F = 1MHz
16000
14000
15
5.5V
Capacitance (pf)
ID - Drain Current (A)
10V,8V,6V
5V
10
5
12000
10000
Ciss
8000
6000
4000
2000
0
0
0
0.5
1
1.5
0
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
Coss
Crss
5
6. Capacitance
3
Publication Order Number:
DS_AM100N20-40FP_1A
Analog Power
AM100N20-40FP
Typical Electrical Characteristics
2.5
VDS = 100V
ID = 20A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
8
6
4
2
0
2
1.5
1
0.5
0
50
100
150
200
-50
-25
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
1000
PEAK TRANSIENT POWER (W)
800
10 uS
100
100 uS
1 mS
ID Current (A)
0
10 mS
10
100 mS
1 SEC
1
10 SEC
100 SEC
1
0.1
DC
Idm limit
600
400
200
Limited by
RDS
0.01
0.1
1
10
100
1000
0
0.001
10000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
0.1
RθJA = 40 °C /W
0.1
0.05
P(pk)
0.02
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
4
Publication Order Number:
DS_AM100N20-40FP_1A
Analog Power
AM100N20-40FP
Package Information
© Preliminary
5
Publication Order Number:
DS_AM100N20-40FP_1A