Analog Power AM500N04-01FP N-Channel 40-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 40 PRODUCT SUMMARY rDS(on) (mΩ) 1.5 @ VGS = 10V 2.5 @ VGS = 6V ID (A) a 500 TO-247 Typical Applications: • Hot Swap Inrush Limit Circuits • Uninterruptible Power Supplies and Inverters • Motor Speed Controls DRAIN connected to TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 TC=25°C ID Continuous Drain Current 500 IDM Pulsed Drain Current a 1250 TC=25°C IS Continuous Source Current (Diode Conduction) 500 T =25°C P Power Dissipation 500 C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol Maximum RθJA 40 RθJC 0.29 Units V A A W °C Units °C/W Notes a. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM500N04-01FP_1A Analog Power AM500N04-01FP Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a Diode Forward Voltage a gfs VSD Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 32 V, VGS = 0 V VDS = 32 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 100 A VGS = 6 V, ID = 80 A VDS = 15 V, ID = 20 A IS = 50 A, VGS = 0 V Min Typ Max 1 ±100 1 25 625 Unit V nA uA A 1.5 2.5 63 1 mΩ S V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 20 V, VGS = 6 V, ID = 20 A VDS = 20 V, RL = 1 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 Mhz 213 97 81 106 130 325 112 27557 2212 1250 nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AM500N04-01FP_1A Analog Power AM500N04-01FP Typical Electrical Characteristics 0.008 100 80 0.006 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 5V 0.004 5.5V 0.002 60 40 20 6V,8V,10V 0 0 0 10 20 30 40 0 50 ID-Drain Current (A) 4 6 8 10 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 0.02 100 TJ = 25°C ID = 20A TJ = 25°C 0.015 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 0.01 0.005 0 10 1 0.1 0.01 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 50 40000 F = 1MHz 10V,8V,6V 35000 Ciss 30000 Capacitance (pf) ID - Drain Current (A) 40 5.5V 30 5V 20 25000 20000 15000 10000 10 Coss Crss 5000 0 0 0 0.05 0.1 0.15 0.2 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM500N04-01FP_1A Analog Power AM500N04-01FP Typical Electrical Characteristics 2.5 VDS = 20V ID = 20A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 0 2 1.5 1 0.5 0 50 100 150 200 250 300 350 -50 -25 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 175 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 10000 PEAK TRANSIENT POWER (W) 1200 1000 10 uS 100 uS ID Current (A) 25 1 mS 100 10 mS 100 mS 10 1 SEC 10 SEC 1 100 SEC 1 0.1 DC Idm limit 1000 800 600 400 200 Limited by RDS 0.01 0.1 1 10 100 0 0.001 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 RθJA = 62.5 °C /W 0.1 0.05 P(pk) 0.02 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM500N04-01FP_1A Analog Power AM500N04-01FP Package Information © Preliminary 5 Publication Order Number: DS_AM500N04-01FP_1A