Data Sheet

Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
’trench’ technology the device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general
purpose
switching
applications.
PINNING - SOT404
PIN
BUK7624-55
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
PIN CONFIGURATION
MAX.
UNIT
55
45
103
175
24
V
A
W
˚C
mΩ
SYMBOL
DESCRIPTION
d
mb
1
gate
2
drain
3
source
mb
drain
g
2
1
s
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
RGS = 20 kΩ
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
- 55
55
55
16
45
31
180
103
175
V
V
V
A
A
A
W
˚C
MIN.
MAX.
UNIT
-
2
kV
TYP.
MAX.
UNIT
-
1.45
K/W
50
-
K/W
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge capacitor
voltage, all pins
Human body model
(100 pF, 1.5 kΩ)
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
-
Rth j-a
April 1998
Minimum footprint, FR4
board
1
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7624-55
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
Drain-source breakdown
voltage
Gate threshold voltage
VGS = 0 V; ID = 0.25 mA;
VGS(TO)
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
IDSS
Zero gate voltage drain current
VDS = 55 V; VGS = 0 V;
VGS = ±10 V; VDS = 0 V
IGSS
Gate source leakage current
±V(BR)GSS
RDS(ON)
Gate source breakdown voltage IG = ±1 mA;
Drain-source on-state
VGS = 10 V; ID = 25 A
resistance
Tj = 175˚C
Tj = 175˚C
Tj = 175˚C
MIN.
TYP.
MAX.
UNIT
55
50
2.0
1.0
16
-
3.0
0.05
0.02
19
-
4.0
4.4
10
500
1
20
24
50
V
V
V
V
µA
µA
µA
µA
V
mΩ
mΩ
MIN.
TYP.
MAX.
UNIT
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
gfs
Forward transconductance
VDS = 25 V; ID = 25 A
4
11
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
1100
280
130
1500
340
180
pF
pF
pF
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 25 A;
VGS = 10 V; RG = 10 Ω
Resistive load
-
12
19
25
18
18
35
35
25
ns
ns
ns
ns
Ld
Internal drain inductance
-
2.5
-
nH
Ls
Internal source inductance
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
-
7.5
-
nH
MIN.
TYP.
MAX.
UNIT
-
-
45
A
IF = 25 A; VGS = 0 V
IF = 40 A; VGS = 0 V
-
0.95
1.0
160
1.2
-
A
V
IF = 40 A; -dIF/dt = 100 A/µs;
VGS = -10 V; VR = 30 V
-
40
0.07
-
ns
µC
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL
PARAMETER
IDR
IDRM
VSD
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
trr
Qrr
Reverse recovery time
Reverse recovery charge
April 1998
CONDITIONS
2
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7624-55
AVALANCHE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
ID = 40 A; VDD ≤ 25 V;
VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C
120
Normalised Power Derating
PD%
1000
MIN.
TYP.
MAX.
UNIT
-
-
80
mJ
ID / A
7524-55
110
100
90
RDS(ON) = VDS / ID
100
80
tp = 10 us
70
60
100 us
50
40
10
1 ms
DC
30
10 ms
100 ms
20
10
0
0
20
40
60
80 100
Tmb / C
120
140
160
1
180
100
1000
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Normalised Current Derating
ID%
10
VDS / V
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
120
1
10
Transient thermal impedance, Zth (K/W)
110
100
1
90
80
0.2
0.1
0.05
70
0.1
60
0.5
50
0.02
PD
40
0.01
30
tp
D=
tp
T
0
20
T
t
10
0
0.001
0
20
40
60
80 100
Tmb / C
120
140
160
180
10us
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V
April 1998
1ms
pulse width, tp (s)
0.1s
10s
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
3
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
100
25
9
10
16
12
ID/A
BUK7624-55
VGS/V =
gfs/S
8.5
80
20
8.0
7.5
15
60
7.0
6.5
40
10
6.0
20
0
5
5.5
5.0
4.5
0
2
4
VSD/V
6
8
0
10
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
40
0
40
ID/A
60
80
100
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
RDS(ON)/mOhm
2.5
VGS/V =
20
BUK959-60
a
Rds(on) normlised to 25degC
6
6.5
35
2
7
30
8
1.5
9
25
10
1
20
15
0
10
20
30
40
ID/A
50
60
70
0.5
-100
80
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
-50
0
50
Tmb / degC
100
150
200
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V
100
5
VGS(TO) / V
BUK759-60
ID/A
max.
80
4
typ.
60
3
40
2
min.
1
20
Tj/C = 175
0
0
2
4
25
6
VGS/V
8
10
0
-100
12
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
April 1998
-50
0
50
Tj / C
100
150
200
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
4
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7624-55
100
Sub-Threshold Conduction
1E-01
IF/A
80
1E-02
2%
1E-03
typ
60
98%
40
1E-04
Tj/C =
25
20
1E-05
1E-06
175
0
0
1
2
3
4
5
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
0
0.5
1
VSDS/V
1.5
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
3
120
WDSS%
110
Thousands pF
2.5
100
90
2
80
70
60
1.5
50
40
1
30
20
5
10
0
20
0
0.01
0.1
1
VDS/V
10
40
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
60
80
100
120
Tmb / C
140
160
180
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 75 A
12
VGS/V
10
VDD
+
VDS = 14V
L
VDS = 44V
8
VDS
6
-
VGS
-ID/100
0
4
2
0
T.U.T.
RGS
0
5
10
15
20
QG/nC
25
30
35
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD )
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 50 A; parameter VDS
April 1998
R 01
shunt
5
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7624-55
+
VDD
RD
VDS
-
VGS
0
RG
T.U.T.
Fig.17. Switching test circuit.
April 1998
6
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7624-55
MECHANICAL DATA
Dimensions in mm
4.5 max
1.4 max
10.3 max
Net Mass: 1.4 g
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.18. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.19. SOT404 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
April 1998
7
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7624-55
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
April 1998
8
Rev 1.000
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