KSMU8P10 KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET Description This P-channel MOSFET s use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) 2) 3) 4) BVDSS RDSON ID -100V 0.53Ω -6.6A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-251 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 -6.6 Continuous Drain Current-T=100℃ -4.2 Pulsed Drain Current2 -26.4 EAS Single Pulse Avalanche Energy3 150 PD Power Dissipation4 44 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMU8P10 KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 2.85 RƟJA Thermal Resistance, Junction to Ambient1 110 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSMU8P10 KSMU8P10 TO-251 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -100 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — -1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA — -2.0 -4.0 V VDS=10V,ID=6A — 0.41 0.53 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A — 4.1 — — 360 470 — 120 155 — 30 40 — 11 30 — 110 230 — 20 50 On Characteristics VGS(th) RDS(ON) GFS GATE-Source Threshold Voltage Drain-Source On Resistance² Forward Transconductance Ω --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 35 80 Qg Total Gate Charge — 12 15 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — 3.0 — Qgd Gate-Drain “Miller” Charge ID=6A — 6.4 — ns ns ns ns nC nC nC — — -4.0 V — 98 — ns — 0.35 — nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMU8P10 KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature www.kersemi.com 3 KSMU8P10 KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET Figure 5. Capacitance Characteristics Figure 7.Breakdown Voltage Variation vs. Temperature Figure 6. Gate Charge Characteristics Figure 8.Maximum Safe Operating Area Figure 9. Transient Thermal Response Curve www.kersemi.com 4