KSMU9120N KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) 2) 3) 4) BVDSS RDSON ID -100V 0.48Ω -6.6A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-251 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 -6.6 Continuous Drain Current-T=100℃ -4.2 Pulsed Drain Current2 -26 EAS Single Pulse Avalanche Energy3 100 PD Power Dissipation4 40 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Ratings Units ID A mJ W Thermal Characteristics Symbol Parameter RƟJC Thermal Resistance ,Junction to Case1 3.1 RƟJA Thermal Resistance, Junction to Ambient1 110 www.kersemi.com ℃/W 1 KSMU9120N KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET Package Marking and Ordering Information Part NO. Marking Package KSMU9120N KSMU9120N TO-251 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -100 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — -25 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA -2.0 — -4.0 V VDS=10V,ID=6A — — 0.48 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A 1.4 — — — 350 — — 110 — — 70 — — 14 — — 47 — — 28 — On Characteristics VGS(th) RDS(ON) GFS GATE-Source Threshold Voltage Drain-Source On Resistance² Forward Transconductance Ω --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 31 — Qg Total Gate Charge — — 27 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — — 5.0 Qgd Gate-Drain “Miller” Charge ID=6A — — 15 ns ns ns ns nC nC nC — — -1.6 V — 100 150 ns — 420 630 nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS Notes: www.kersemi.com 2 KSMU9120N KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics unless otherwise noted Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.kersemi.com 3 KSMU9120N KERSMI ELECTRONIC CO.,LTD. -100V Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage P-channel MOSFET Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Fig 8. Maximum Safe Operating Area Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 4