UNISONIC TECHNOLOGIES CO., LTD UF840K-MTQ Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * Low RDS(ON)< 0.87Ω @ VGS=10V. ID = 4.4A * Single Pulse Avalanche Energy Rated * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen-Free UF840KL-TA3-R UF840KG-TA3-R UF840KL-TF3-R UF840KG-TF3-R UF840KL-TF1-T UF840KG-TF1-T UF840KL-TN3-R UF840KG-TN3-R UF840KL-TQ2-T UF840KG-TQ2-T UF840KL-TQ2-R UF840KG-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-252 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tube Tape Reel 1 of 7 QW-R209-077.D UF840K-MTQ Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-077.D UF840K-MTQ Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless Otherwise Specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ =25°C ~125°C) VDSS 500 V Drain to Gate Voltage (RGS = 20kΩ, TJ =25°C ~125°C) VDGR 500 V Gate to Source Voltage VGSS ±30 V Continuous ID 8.0 A Drain Current (Note 2) 32 A Pulsed IDM Single Pulse Avalanche Energy (Note 3) EAS 336 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.3 V/ns TO-220/TO-263 134 W Power Dissipation PD TO-220F/ TO-220F1 44 W TO-252 107 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 10mH, IAS = 8.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C. 4. ISD ≤ 8.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C. THERMAL RESISTANCES CHARACTERISTICS PARAMETER TO-220/TO-220F TO-220F1/TO-263 Junction to Ambient TO-252 TO-220/TO-263 Junction to Case TO-220F/TO-220F1 TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS UNIT 62.5 °C/W 110 0.93 2.7 1.16 °C/W °C/W °C/W °C/W 3 of 7 QW-R209-077.D UF840K-MTQ Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID = 250μA, VGS = 0V VDS=Rated BVDSS, VGS = 0V VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VGS=VDS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS=10V. ID=4.4A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 1) QG VDS=50V, VGS=10V, ID=1.3A, Gate to Source Charge QGS ID=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-on Delay Time (Note 1) tD(ON) VDS=30V, VGS=10V, ID=0.5A, Rise Time tR RG=25Ω (Note 1, 2) Turn-off Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD IS=8.0A, VGS=0V Reverse Recovery Time (Note 1) trr IS=8.0A, VGS=0V, dIF/dt=100A/µs Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 500 2.0 25 +100 -100 V μA nA nA 4.0 0.87 V Ω 750 130 16 pF pF pF 90 6.5 7.5 55 210 43 40 nC nC nC ns ns ns ns 2 8 32 312 3.1 A A V nS nC 4 of 7 QW-R209-077.D UF840K-MTQ Power MOSFET TEST CIRCUITS AND WAVEFORMS Unclamped Energy Test Circuit Unclamped Energy Waveforms Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-077.D UF840K-MTQ Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) tON tOFF tDLY(ON) tDLY(OFF) tR VDS tF 90% 90% 10% 0 10% 90% VGS 0 10% 50% 50% PULSE WIDTH Resistive Switching Waveforms Gate Charge Test Circuit Gate Charge Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R209-077.D UF840K-MTQ Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-077.D