Datasheet

UNISONIC TECHNOLOGIES CO., LTD
5N65K-MTQ
Preliminary
Power MOSFET
5A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 5N65K-MTQ is a high voltage power MOSFET
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications at power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) < 2.4Ω @ VGS = 10 V, ID = 2.5 A
* Fast Switching Capability
* Improved dv/dt Capability, High Ruggedness

SYMBOL
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Copyright © 2015 Unisonic Technologies Co., Ltd
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5N65K-MTQ

Preliminary
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N65KL-TA3-T
5N65KG-TA3-T
5N65KL-TF3-T
5N65KG-TF3-T
5N65KL-TF1-T
5N65KG-TF1-T
5N65KL-TF2-T
5N65KG-TF2-T
5N65KL-TF3-T
5N65KG-TF3-T
5N65KL-TM3-T
5N65KG-TM3-T
5N65KL-TMS-T
5N65KG-TMS-T
5N65KL-TMS2-T
5N65KG-TMS2-T
5N65KL-TMS4-T
5N65KG-TMS4-T
5N65KL-TN3-R
5N65KG-TN3-R
5N65KL-TND-R
5N65KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Power MOSFET
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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5N65K-MTQ

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
5
A
Continuous Drain Current
ID
5
A
Pulsed Drain Current (Note 2)
IDM
20
A
Single Pulsed (Note 3)
EAS
160
mJ
Avalanche Energy
10
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
108
TO-220F/TO-220F1
36
TO-220F3
Power Dissipation
PD
W
TO-220F2
38
TO-251/TO-251S
TO-251S2/TO-251S4
54
TO-252/TO-252D
Junction Temperature
TJ
+150
°C
Operation Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L=12.8mH, IAS=5A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤5A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
UNIT
62.5
°C/W
110
°C/W
1.15
°C/W
3.47
°C/W
3.28
°C/W
2.3
°C/W
θJA
θJC
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
VGS =0V, ID = 250μA
VDS =650V, VGS = 0V
Forward
VGS =30V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS =-30V, VDS = 0V
ID =250μA, Referenced to
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ
25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS =10V, ID = 2.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
Output Capacitance
COSS
f = 1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 30V, ID =0.5A,
Turn-On Rise Time
tR
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS = 50 V, ID = 1.3A,
Gate-Source Charge
QGS
VGS = 10 V (Note 1, 2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 5A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
650
1
100
-100
0.6
2.0
V
μA
nA
V/°C
1.47
4.0
2.4
V
Ω
475
65
6.5
670
72
8.5
pF
pF
pF
50
42
180
56
18
6.4
4
60
60
210
100
23
ns
ns
ns
ns
nC
nC
nC
1.4
V
5
A
20
A
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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5N65K-MTQ

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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5N65K-MTQ
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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