Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT3N10-H
Power MOSFET
2.5A, 100V N-CHANNEL
LOGIC LEVEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR

DESCRIPTION
The UTC UTT3N10-H is an N-channel logic level enhancement
mode field effect transistor, it uses UTC’s advanced technology to
provide the customers with high switching speed and low gate
charge.

FEATURES
* RDS(on) < 225mΩ @ VGS = 10V, ID = 1.25A
RDS(on) < 360mΩ @ VGS = 4.5V, ID = 125A
* High switching speed
* Low grage

SYMBOL

ORDERING INFORMATION
Order Number
UTT3N10G-AA3-R
Note: Pin Assignment: G: Gate
D: Drain

Package
SOT-223
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
S: Source
MARKING
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UTT3N10-H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous
(Note 1)
Drain Current
RATINGS
UNIT
+100
V
±20
V
TA=25°C
2.5
A
ID
2.0
A
TA=70°C
10
A
Pulsed (Note 2)
IDM
Single Pulsed Avalanche Energy
EAS
12
mJ
Power Dissipation
TA=25°C
3
W
PD
(Note 1)
1.9
TA=70°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
THERMAL CHARACTERISTICS
PARAMETER
Junction to Case (Note 1)
Junction to Ambient (Note 1)

SYMBOL
θJC
θJA
RATINGS
12
42
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
SYMBOL
Static Drain-Source On-State Resistance
RDS(ON)
BVDSS
IDSS
IGSS
VGS(TH)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=80V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
100
VDS=VGS, ID=250µA
VGS=10V, ID=1.25A
VGS=4.5V, ID=1A
VDS=20V, ID=1.25A
1
Forward Transconductance
gFS
DYNAMIC PARAMETERS (Note 3)
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note 3)
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A
Gate to Source Charge
QGS
IG=100µA
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A, RG=25Ω,
Rise Time
tR
VGS=10V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1A, VGS=0V
Note: 1. Surface Mounted on FR4 Board, t ≤10sec.
2. Pulse Test: Pulse Width ≤ 300us, Duty Cycle ≤ 2%
3. Guaranteed by design, not subject to production testing
4. Starting TJ=25°C, L=0.5mH, VDD=50V
UNISONIC TECHNOLOGIES CO., LTD
MIN TYP MAX UNIT
V
1
µA
+100 nA
-100 nA
1.6
180
265
2.3
2.5
225
360
V
mΩ
mΩ
S
550
30
19
pF
pF
pF
65
2.5
2.2
25
12
150
55
nC
nC
nC
ns
ns
ns
ns
0.8
1.2
V
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UTT3N10-H

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
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UTT3N10-H
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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