Automotive DirectFET2 Product Platform

AUTOMOTIVE
THE POWER MANAGEMENT LEADER
Automotive DirectFET®2
Product Platform
Features:
•Automotive Qualified to AEC Q101
•Exceptional power density
•Low parasitic inductance
•Double-sided cooling
•Autoclave capable
•MSL1 Rated
•New large can: 60% area reduction, with
improved RDS(on) compared to best-in-class
D2Pak
•Voltage ratings up to 250V
•Standardized pad outlines allowing for easy
system scalability
Applications:
•Injection
•DC-DC
•Motor Drive
•Battery Switch
•Class D
•Steering Systems
Improve Performance and Efficiency;
Reduce System Size and Part Count
In 2002, International Rectifier introduced its unique power semiconductor packaging
technology with the launch of the DirectFET® product line. The DirectFET concept yielded
a power package with vastly improved performance when compared to traditional plastic
power packages. Since that time IR has undertaken extensive research and development
to produce the DirectFET®2 platform, specifically aimed at Automotive applications. The
new Automotive DirectFET®2 product platform combines the outstanding performance of
the DirectFET packaging technology with IR’s latest trench silicon which can be optimized
by application for next-generation vehicle platforms for ultra-low on-state resistance
(RDS(on)), gate charge (Qg) or logic level operation.
DirectFET®2
DirectFET®2
MOSFET
DirectFET 2
MOSFET
Small Can
Medium Can
®
For more information in North America call +1 310 252 7105, in Europe call +49 6102 884 311, or visit us at www.irf.com
MOSFET
Large Can
10526B_FS
Improve Performance and Efficiency; Reduce System Size and Part Count
Lowest Die Free Package Resistance
90
1.6
Thermal resistance (°C/W)
1.2
Rth(j-c)top
1
0.8
0.6
0.4
70
60
Rth(j-pcb)
50
j-c(top)
j-pcb
40
30
20
0.2
10
-8
SO
N
QF
SO
p
SO-8
k
QFN
tra
D2Pak
-s
Cu-strap
SO-8
D2
Pa
Cu-strap
QFN
Di
re
c
Cu tFET
-s
tra
p
QF
N
DirectFET
-8
0
0
Cu
DFPR (mOhm)
Superior Dual-sided Cooling
80
1.4
Reduced parasitic inductance and ringing for improved EMI performance
!
Die free package inductance versus frequency
SO-8
6.00
Die free package inductance
(nH)
5.00
4.00
DFET
3.00
SO-8
2.00
D-Pak
1.00
D2Pak
(3x20)
DirectFET®2
0.00
0
1
2
3
4
5
Frequency (MHz)
V(BR)DSS (V)
RDS(ON) Max. @
10VGS (mOhm)
40
40
40
40
40
40
60
60
75
100
100
100
100
150
250
1.0
1.6
1.9
3.0
4.1
9.9
7.0
36.0
1.8
4.4
10.0
31.0
62.0
56.0
32.0
RDS(ON) Max. @
4.5VGS (mOhm)
2.9
6.4
10.5
ID Max @
TC = 25°C (A)
QG Typ. @
10VGS (nC)
270
210
156
108
143
65
68
21
160
114
51
24
14
18
35
220
147
89
72
QG Typ. @
4.5VGS (nC)
59
24
35
7
200
81
44
14
8
21
110
Pad
Outline
Optimized
Feature
L8
L6
L6
M4
M4
SC
M4
SB
L8
L8
M4
SC
SB
M2
L8
Low RDS(on)
Low RDS(on)
Low RDS(on)
Low RDS(on)
Low RDS(on)
Low RDS(on)
Low Qg
Low Qg
Low RDS(on)
Low Qg
Low RDS(on)
Low Qg
Low Qg
Low Qg
Low RDS(on)
Package
Small Can
Medium Can
Large Can
AUIRF7739L2
AUIRF7738L2
AUIRF7737L2
AUIRF7736M2
AUIRL7736M2
AUIRL7732S2
AUIRF7648M2
AUIRF7640S2
AUIRF7759L2
AUIRF7669L2
AUIRL7766M2
AUIRF7647S2
AUIRF7665S2
For more information in North America call +1 310 252 7105, in Europe call +49 6102 884 311, or visit us at www.irf.com
AUIRF7675M2
AUIRF7799L2
10526B_FS
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