Data Sheet

BUK7619-100B
N-channel TrenchMOS standard level FET
Rev. 01 — 10 October 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
n TrenchMOS technology
n 175 °C rated
n Q101 compliant
n Standard level compatible
1.3 Applications
n Automotive systems
n Motors, lamps and solenoids
n General purpose power switching
n 12 V, 24 V and 42 V loads.
1.4 Quick reference data
n EDS(AL)S ≤ 222 mJ
n ID ≤ 64 A
n RDSon = 17 mΩ (typ)
n Ptot ≤ 200 W
2. Pinning information
Table 1.
Pinning
Pin
Description
1
gate (G)
2
drain (D)
3
source (S)
mb
mounting base; connected to drain (D)
Simplified outline
Symbol
D
mb
G
mbb076
2
1
3
SOT404 (D2PAK)
S
BUK7619-100B
NXP Semiconductors
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2.
Ordering information
Type number
BUK7619-100B
Package
Name
Description
Version
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3-leads (one
lead cropped)
SOT404
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
drain-source voltage
VDGR
drain-gate voltage (DC)
VGS
gate-source voltage
ID
drain current
Conditions
RGS = 20 kΩ
Min Max
Unit
-
100
V
-
100
V
-
±20
V
Tsp = 25 °C; VGS = 10 V; see Figure 2 and 3
-
64
A
Tsp = 100 °C; VGS = 10 V; see Figure 2
-
45
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
-
256
A
Tmb = 25 °C; see Figure 1
-
200
W
Ptot
total power dissipation
Tstg
storage temperature
−55 +175 °C
Tj
junction temperature
−55 +175 °C
Source-drain diode
IDR
reverse drain current
Tmb = 25 °C
-
64
A
IDRM
peak reverse drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
256
A
-
222
mJ
-
-
mJ
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche unclamped inductive load; ID = 64 A;
energy
VDS ≤ 100 V; RGS = 50 Ω; VGS = 10 V; starting
at Tj = 25 °C
EDS(AL)R
repetitive drain-source avalanche
energy
[1]
[1]
Conditions:
a) Maximum value not quoted. Repetitive rating defined in Figure 16.
b) Single-pulse avalanche rating limited by Tj(max) of 175 °C.
c) Repetitive avalanche rating limited by an average junction temperature of 170 °C.
d) Refer to application note AN10273 for further information.
BUK7619-100B_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 10 October 2007
2 of 12
BUK7619-100B
NXP Semiconductors
N-channel TrenchMOS standard level FET
03na19
120
003aab142
80
ID
(A)
Pder
(%)
60
80
40
40
20
0
0
50
100
150
0
200
0
Tmb (°C)
50
100
150
Tmb (°C)
200
VGS ≥ 10 V
P tot
P der = ------------------------ × 100 %
P tot ( 25°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Continuous drain current as a function of
mounting base temperature
003aab143
103
Limit RDSon = VDS / ID
ID
(A)
tp = 10 µ s
102
100 µ s
1 ms
10
10 ms
DC
100 ms
1
10-1
1
102
10
103
VDS (V)
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7619-100B_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 10 October 2007
3 of 12
BUK7619-100B
NXP Semiconductors
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol
Parameter
Rth(j-mb)
Rth(j-a)
Conditions
Min
Typ
Max
Unit
thermal resistance from junction
to mounting base
-
-
0.74
K/W
thermal resistance from junction mounted on a printed-circuit board;
to ambient
minimum footprint
-
50
-
K/W
003aab144
1
δ = 0.5
Zth (j-mb)
(K/W)
0.2
10-1
0.1
0.05
10-2
0.02
δ=
P
tp
T
single shot
t
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7619-100B_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 10 October 2007
4 of 12
BUK7619-100B
NXP Semiconductors
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
100
-
-
V
Tj = −55 °C
89
-
-
V
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown voltage ID = 250 µA; VGS = 0 V
gate-source threshold voltage
drain leakage current
ID = 1 mA; VDS = VGS; see Figure 9 and10
Tj = 25 °C
2
3
4
V
Tj = 175 °C
1
-
-
V
Tj = −55 °C
-
-
4.4
V
VDS = 100 V; VGS = 0 V
Tj = 25 °C
-
0.02
1
µA
Tj = 175 °C
-
-
500
µA
-
2
100
nA
VGS = ±20 V; VDS = 0 V
IGSS
gate leakage current
RDSon
drain-source on-state resistance VGS = 10 V; ID = 25 A; see Figure 7 and 8
Tj = 25 °C
-
17
19
mΩ
Tj = 175 °C
-
-
49
mΩ
-
53
-
nC
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
tf
ID = 25 A; VDD = 80 V; VGS = 10 V;
see Figure 14
-
11
-
nC
-
27
-
nC
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 12
-
2555
3400
pF
-
340
480
pF
-
84
115
pF
VDS = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
-
19
-
ns
-
45
-
ns
turn-off delay time
-
85
-
ns
fall time
-
34
-
ns
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; see Figure 15
-
0.85
1.2
V
trr
reverse recovery time
-
116
-
ns
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs;
VGS = 0 V; VR = 30 V
-
130
-
nC
BUK7619-100B_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 10 October 2007
5 of 12
BUK7619-100B
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aac043
200
VGS (V) = 20V
15
ID
(A)
10
8
003aac044
30
RDSon
(mΩ)
25
150
7
6
100
20
5.5
15
50
5
4.5
10
0
0
2
4
6
8
0
10
VDS (V)
10
15
20
VGS (V)
Tj = 25 °C
Tj = 25 °C; ID = 10 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
003aac045
50
RDSon
(mΩ)
5
5.5
6
6.5
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
03ng41
2.8
8
a
40
VGS (V) = 5
2.1
10
30
20
1.4
20
0.7
10
0
0
40
80
120
160
ID (A)
200
Tj = 25 °C
0
-60
60
120
Tj (°C)
180
R DSon
a = ----------------------------R DSon ( 25°C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7619-100B_1
Product data sheet
0
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 10 October 2007
6 of 12
BUK7619-100B
NXP Semiconductors
N-channel TrenchMOS standard level FET
03aa32
5
03aa35
10−1
ID
(A)
VGS(th)
(V)
4
3
2
min
10−2
max
typ
10−3
min
10−4
typ
max
10−5
1
0
−60
0
60
120
180
10−6
0
Tj (°C)
2
4
6
VGS (V)
Tj = 25 °C; VDS = VGS
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
003aac039
80
gfs
(S)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aac038
4000
C
(pF)
Ciss
60
3000
40
2000
20
1000
Coss
Crss
0
0
20
40
ID (A)
60
Tj = 25 °C; VDS = 25 V
0
10-1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7619-100B_1
Product data sheet
1
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 10 October 2007
7 of 12
BUK7619-100B
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aac040
100
003aac041
10
VGS
(V)
ID
(A)
80
8
60
6
VDS (V) = 14
VDS (V) = 80
40
4
Tj = 175 °C
20
2
Tj = 25 °C
0
0
0
2
4
VGS (V)
6
0
20
40
QG (nC)
60
Tj = 25 °C; ID = 25 A
VDS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aac042
100
IS
(A)
Fig 14. Gate-source voltage as a function of gate
charge; typical values
003aab145
102
(1)
IAL
(A)
75
25
(2)
10
50
Tj = 175 °C
Tj = 25 °C
0
0.0
0.5
1.0
VSD (V)
(3)
1.5
VGS = 0 V
1
10-3
10-2
10-1
1
tAL (ms)
10
See Table note 1 of Table 3 Limiting values.
(1) Single-pulse; Tj = 25 °C.
(2) Single-pulse; Tj = 125 °C.
(3) Repetitive.
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
Fig 16. Single-pulse and repetitive avalanche rating;
avalanche current as a function of avalanche
time
BUK7619-100B_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 10 October 2007
8 of 12
BUK7619-100B
NXP Semiconductors
N-channel TrenchMOS standard level FET
7. Package outline
SOT404
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
A
A1
E
mounting
base
D1
D
HD
2
Lp
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
2.54
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-02-11
06-03-16
SOT404
Fig 17. Package outline SOT404 (D2PAK)
BUK7619-100B_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 10 October 2007
9 of 12
BUK7619-100B
NXP Semiconductors
N-channel TrenchMOS standard level FET
8. Soldering
10.85
10.60
10.50
1.50
7.50
7.40
1.70
2.25 2.15
8.15
8.275
8.35
1.50
4.60
0.30
4.85
5.40
7.95
8.075
3.00
0.20
1.20
1.30
1.55
solder lands
solder resist
5.08
msd057
occupied area
solder paste
Fig 18. Reflow soldering footprint for SOT404
9. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK7619-100B_1
20071010
Product data sheet
-
-
BUK7619-100B_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 10 October 2007
10 of 12
BUK7619-100B
NXP Semiconductors
N-channel TrenchMOS standard level FET
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
11. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BUK7619-100B_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 10 October 2007
11 of 12
BUK7619-100B
NXP Semiconductors
N-channel TrenchMOS standard level FET
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 10 October 2007
Document identifier: BUK7619-100B_1
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