Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UD8404
Preliminary
POWER MOSFET
DUAL ENHANCEMENT MODE,
FIELD EFFECT TRANSISTOR
SILICON
(N-CHANNEL/P-CHANNEL)

DESCRIPTION
The UTC UD8404 is a dual Channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance, etc.
The UTC UD8404 is suitable for portable equipment
applications and motor drive applications.

SOP-8
FEATURES
P-Channel
* -30V, -4A
RDS(ON) < 38 mΩ (Typ.) @ VGS=-10V, ID=-2A
RDS(ON) < 58 mΩ (Typ.) @ VGS=-4.5V, ID=-2A
N-Channel
* 30V, 4A
RDS(ON) < 38 mΩ (Typ.) @ VGS=10V, ID=2A
RDS(ON) < 58 mΩ (Typ.) @ VGS=4.5V, ID=2A
* Low leakage current

SYMBOL
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Copyright © 2015 Unisonic Technologies Co., Ltd
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UD8404

Power MOSFET
ORDERING INFORMATION
Note:

Preliminary
Ordering Number
Package
UD8404G-S08-R
Pin Assignment: G: Gate D: Drain
SOP-8
Pin Assignment
1 2 3 4 5 6 7 8
S1 G1 S2 G2 D2 D2 D1 D1
Packing
Tape Reel
S: Source
MARKING
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www.unisonic.com.tw
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UD8404

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATING (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
N-Ch
30
30
±20
2
2.6
4
16
P-Ch
-30
-30
±20
-2
2.6
-4
-16
UNIT
Drain-Source Voltage
VDSS
V
Drain-Gate Voltage (RGS=20kΩ)
VDGR
V
Gate-Source Voltage
VGSS
V
Avalanche Current
IAR
A
Single Pulse Avalanche Energy (Note 3)
EAS
mJ
DC (Note 5)
ID
A
Drain Current
A
Pulse (Note 5)
IDP
Single-dvice operation
1.48
W
(Note 7a)
Power Dissipation (t=5s)
PD
(Note 6)
Single-dvice value at dual
1.23
W
operation (Note 7b)
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=0.5mH, IAS=±2A, VDD= 50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤15A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
5. The channel temperature should not exceed 150°C during use.
6. Device mounted on a glass-epoxy board FR-4 25.4 × 25.4 × 0.8 mm.
7. (a) The power dissipation and thermal resistance values shown are for a single device. (During
single-device operation, power is only applied to one device.)
(b) The power dissipation and thermal resistance values shown are for a single device. (During dual
operation, power is evenly applied to both devices.)

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Single-dvice operation
(Note 7a)
Junction to Ambient (Note 6)
Single-dvice value at dual
operation (Note 7a)
Single-dvice operation
(Note 7b)
Junction to Case (Note 6)
Single-dvice value at dual
operation (Note 7b)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
RATINGS
UNIT
84.5
°C/W
215.5
°C/W
101.6
°C/W
347.2
°C/W
θJA
θJC
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°С, unless otherwise specified)
N-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain Cut-Off Current
Gate Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
TEST CONDITIONS
Turn-OFF Time
MIN
BVDSS
BVDSX
IDSS
IGSS
ID=10mA, VGS=0V
ID=10mA, VGS=-20V
VDS=30V, VGS=0V
VGS=±20V, VDS=0V
30
10
VGS(TH)
VDS=10V, ID=1mA
VGS=10V, ID=2A
VGS=4.5V, ID=2A
VDS=10V, ID=2A
1.3
RDS(ON)
|Yfs|
CISS
CRSS
COSS
4
QG
QGS1
QGD
tR
tON
tF
VDD≈24V, VGS=10V, ID=4A
tOFF
TYP MAX UNIT
10
±100
VGS=0V, VDS=10V, f=1.0MHz
4.7Ω
Forward Transfer Admittance
DYNAMIC PARAMETERS
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
SWITCHING PARAMETERS
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge 1
Gate-Drain (“Miller”) Charge
Rise Time
Turn-ON Time
Fall-Time
SYMBOL
RL=7.5Ω

Preliminary
38
58
8
2.5
50
80
V
V
µA
nA
V
mΩ
mΩ
S
190
45
60
pF
pF
pF
4.6
nC
0.7
1.4
4.5
9.0
3.0
nC
nC
ns
ns
ns
12
ns
Duty≤1%, tW=10μs
SOURCE TO DRAIN DIODE SPECIFICATIONS
Drain Reverse Current Pulse (Note)
IDRP
Forward Voltage (Diode)
VDSF
IDR=4A, VGS=0V
Note: The channel temperature should not exceed 150°C during use.
UNISONIC TECHNOLOGIES CO., LTD
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16
-1.2
A
V
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UD8404

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (Cont.)
P-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain Cut-Off Current
Gate Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transfer Admittance
DYNAMIC PARAMETERS
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
SYMBOL
TEST CONDITIONS
BVDSS
BVDSX
IDSS
IGSS
ID=-10mA, VGS=0V
ID=-10mA, VGS=20V
VDS=-30V, VGS=0V
VGS=±20V, VDS=0V
-30
-10
VGS(TH)
VDS=-10V, ID=-1mA
-0.8
RDS(ON)
VGS=-10V, ID=-2.0A
VGS=-4.5V, ID=-2.0A
|Yfs|
VDS=-10V, ID=-2.0A
CISS
CRSS
COSS
VGS=0V, VDS=-10V, f=1.0MHz
Total Gate Charge
QG
(Gate-Source Plus Gate-Drain)
VDD≈-24V, VGS=-10V, ID=-4A
Gate-Source Charge 1
QGS
Gate-Drain (“Miller”) Charge
QGD
SWITCHING PARAMETERS
Rise Time
tR
Turn-ON Time
tON
Duty ≤1%, tW=10μs
Fall-Time
tF
Turn-OFF Time
tOFF
SOURCE TO DRAIN DIODE SPECIFICATIONS
Drain Reverse Current Pulse (Note)
IDRP
Forward Voltage (Diode)
VDSF
IDR=-4A, VGS=0V
Note: The channel temperature should not exceed 150°C during use.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
3.7
-10
±100
V
V
µA
nA
-2.0
V
38
50
mΩ
58
80
mΩ
7.3
S
510
110
170
pF
pF
pF
13
nC
1.7
4.6
nC
nC
11
20
37
99
ns
ns
ns
ns
-16
1.2
A
V
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UD8404
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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