Datasheet

UNISONIC TECHNOLOGIES CO., LTD
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UPD02R1350L
Power MOSFET
-1.2A, 20V P-CHANNEL
POWER MOSFE

DESCRIPTION
The UTC UPD02R1350L is a P-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance and low gate charge, etc.
The UTC UPD02R1350L is suitable for use as a load switch or in
PWM applications.

FEATURES
* RDS(ON) < 135 mΩ @ VGS=-4.5V, ID=-1.2A
RDS(ON) < 170 mΩ @ VGS=-2.5V, ID=-1A
RDS(ON) < 220 mΩ @ VGS=-1.8V, ID=-1A
* Low gate charge

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UPD02R1350LG-AL3-R
Pin Assignment: G: Gate D: Drain
Package
SOT-323
1
S
Pin Assignment
2
3
G
D
Packing
Tape Reel
S: Source
MARKING
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
-20
V
±8
V
TA=25°C
-1.2
A
Continuous Drain Current
ID
TA=70°C
-1
A
Pulsed Drain Current (Note 3)
IDM
-10
A
TA=25°C
0.63
W
PD
Power Dissipation (Note 2)
TA=70°C
0.4
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low
frequency and duty cycles to keep initial TJ=25°C.

SYMBOL
VDSS
VGSS
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 1)
t≤10s
160
200
°C/W
θJA
Junction to Ambient (Note 1, 2) Steady State
180
220
°C/W
Junction-to-Lead
Steady State
θJL
130
160
°C/W
2
Notes: 1. The value of θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The value in any given application depends on the user's specific board
design.
2. The θJA is the sum of the thermal impedence from junction to lead θJL and lead to ambient.
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted)
PARAMETER
STATIC PARAMETERS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
IGSS
Static Drain-Source On-State Resistance
VGS(TH)
ID(ON)
RDS(ON)
TEST CONDITIONS
ID=-250µA, VGS=0V
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V, TJ=55°C
VGS=±8V, VDS=0V
-20
VDS=VGS, ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-1.2A
VGS=-4.5V, ID=-1.2A, TJ=125°C
VGS=-2.5V, ID=-1A,
VGS=-1.8V, ID=-1A
-0.4 -0.65
-10
65
90
80
100
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=-10V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=-4.5V, VDS=-10V, ID=-1.2A
Gate to Source Charge
QGS
IG=100µA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VGS=-4.5V, VDS=-10V, RL=8.3Ω,
Turn-ON Rise Time
tR
RG=3Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=-1A,VGS=0V
Maximum Body-Diode Continuous
IS
Current
Notes: 1. Pulse test; pulse width ≤300μs, duty cycle≤2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
-1
-5
±100
-1
135
175
170
220
V
µA
µA
nA
V
A
mΩ
mΩ
mΩ
mΩ
560
80
70
745
pF
pF
pF
8.5
1.2
2.1
7.2
36
53
56
11
nC
nC
nC
ns
ns
ns
ns
-0.7
-1
V
-1
A
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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