Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT3437
Preliminary
Power MOSFET
-1.4A, -150V P-CHANNEL (D-S)
POWER MOSFET

DESCRIPTION
6
The UTC UT3437 is a P-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with low gate charge,
etc.
The UTC UT3437 is suitable for active clamp circuits in DC/DC
power supplies.

5
4
1
2
3
SOT-26
FEATURES
* RDS(ON) < 0.75 Ω @ VGS=-10V, ID=-1.4A
RDS(ON) < 0.79 Ω @ VGS=-6V, ID=-1A
* Low gate charge

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UT3437G-AG6-R
Pin Assignment: G: Gate D: Drain
Package
SOT-26
1
D
Pin Assignment
2
3
4
5
D G S D
6
D
Packing
Tape Reel
S: Source
MARKING
6 5
4
3437G
1
2
3
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R210-023.B
UT3437

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
-150
V
±20
V
TC=25°C
-1.4
A
ID
Continuous Drain Current
-1.1
A
TC=70°C
(TJ=150°C)
TA=25°C, t=5s
-1.1 (Note 1)
A
ID
-0.88 (Note 1)
A
TA=70°C, t=5s
Pulsed Drain Current
IDM
-5
A
Continuous Source-Drain Diode
TC=25°C
-2.6
A
IS
Current
TA=25°C, t=5s
1.6 (Note 1)
A
Avalanche Current
IAS
14
A
Single-Pulse Avalanche Energy
EAS
10
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.27
V/ns
Maximum Power Dissipation
PD
1.1
W
Junction Temperature
TJ
-55 ~ 150
°C
Storage Temperature Range
TSTG
-55 ~ 150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=0.1mH, IAS=14A, VDD=50V, RG=25Ω, Starting TJ = 25°C
4. ISD≤2.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

SYMBOL
VDSS
VGSS
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Junction to Ambient (Note 1, 2)
θJA
Junction-to-Case
θJC
Notes: 1. Surface Mounted on 1" x 1" FR4 board.
2. Maximum under Steady State conditions is 110°C/W.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
110
30
UNIT
°C/W
°C/W
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QW-R210-023.B
UT3437

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
PARAMETER
STATIC PARAMETERS
Drain-Source Breakdown Voltage
VDSS Temperature Coefficient
SYMBOL
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) Temperature Coefficient
On-State Drain Current (Note 1)
Drain-Source On-State Resistance
(Note 1)
IGSS
BVDSS
∆VDSS/TJ
TEST CONDITIONS
ID=-250µA, VGS=0V
-150
ID=-250µA
VDS=-150V, VGS=0V
VDS=-150V, VGS=0V, TJ=55°C
VGS=±20V, VDS=0V
VGS(TH)
VDS=VGS, ID=-250µA
∆VGS(TH)/TJ ID=-250µA
ID(ON)
VDS≥-10V, VGS=-10V
VGS=-10V, ID=-1.4A
RDS(ON)
VGS=-6V, ID=-1A
gFS
VDS=-10V, ID=-1.4A
Forward Transconductance (Note 1)
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
CISS
VDS=-25V,VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=-10V, VDS=-50V,
Gate to Source Charge
QGS
ID=-1.3A, IG=-100µA
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDS=-75V, VGS=-10V,
Rise Time
tR
ID=-1.0A, RG=1Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source-Drain Diode Current
IS
TC=25°C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
IS=-1A,VGS=0V
Body Diode Reverse Recovery Time
trr
IF=-1.2A, dI/dt=100A/µs,
TJ=25°C
Body Diode Reverse Recovery Charge
Qrr
Notes: 1. Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
-160
-2
MAX
UNIT
V
mV/°C
-1
µA
-10
µA
±100
nA
-4
5.5
-3
4.5
V
mV/°C
A
0.75
Ω
0.79
Ω
S
500
47
23
8
pF
pF
pF
Ω
32
2.7
3.4
45
40
100
45
nC
nC
nC
ns
ns
ns
ns
-0.8
150
180
-1.4
-5
-1.2
A
A
V
ns
nC
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QW-R210-023.B
UT3437

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R210-023.B
UT3437
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

Switching Test Circuit
Switching Waveforms
VGS
Same Type
as D.U.T.
50kΩ
12V
0.2μF
QG
-10V
0.3μF
VDS
QGS
QGD
VGS
DUT
-3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R210-023.B
UT3437

Power MOSFET
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 7
QW-R210-023.B
UT3437

Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 7
QW-R210-023.B
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