BUK9C10-65BIT N-channel TrenchPLUS logic level FET Rev. 02 — 21 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in SOT427. Device is manufactured using NXP High-Performance TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes. 1.2 Features and benefits AEC-Q101 compliant Low conduction losses due to low on-state resistance 1.3 Applications Lamp switching Power distribution Motor drive systems Solenoid drivers 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit 8.5 10 Static characteristics RDSon drain-source on-state resistance VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 13; see Figure 12 - ID/Isense ratio of drain current to sense current Tj = 25 °C; VGS = 5 V; see Figure 14 8094 8993 9892 A/A V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 65 - - mΩ V BUK9C10-65BIT NXP Semiconductors N-channel TrenchPLUS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 IS current sense 3 A anode 4 D drain 5 K cathode 6 KS Kelvin source 7 S source mb D mb Simplified outline Graphic symbol mb D A G IS 4 KS S C 003aad829 123 567 SOT427 (D2PAK) 3. Ordering information Table 3. Ordering information Type number BUK9C10-65BIT BUK9C10-65BIT Product data sheet Package Name Description D2PAK plastic single-ended surface-mounted package (D2PAK); 7 leads SOT427 (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 Version © NXP B.V. 2010. All rights reserved. 2 of 15 BUK9C10-65BIT NXP Semiconductors N-channel TrenchPLUS logic level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - - 65 V VDGR drain-gate voltage RGS = 20 kΩ; 25 °C ≤ Tj ≤ 150 °C - - 65 V VGS gate-source voltage ID drain current -15 - 15 V VGS = 5 V; Tmb = 25 °C; see Figure 1 [1] - - 75 A VGS = 5 V; Tmb = 100 °C; see Figure 1 [1] - - 60 A IDM peak drain current Tmb = 25 °C; single pulse; tp ≤ 10 µs; see Figure 4 - - 346 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 171 W Tstg storage temperature -55 - 150 °C Tj junction temperature -55 - 150 °C Visol(FET-TSD) FET to temperature sense diode isolation voltage - - 100 V Source-drain diode IS source current Tmb = 25 °C ISM peak source current single pulse; tp ≤ 10 µs; Tmb = 25 °C [1] - - 75 A - - 346 A - - 0.214 J HBM; C = 100 pF; R = 1.5 kΩ; all pins - - 0.15 kV HBM; C = 100 pF; R = 1.5 kΩ; pin 4 to pin 7 - - 4 kV Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 75 A; Vsup = 65 V; VGS = 5 V; Tj(init) = 25 °C; unclamped; see Figure 3 [2][3] Electrostatic discharge VESD electrostatic discharge voltage [1] Current is limited by package [2] Single-pulse avalanche rating limited by maximum junction temperature of 150 °C. [3] Refer to application note AN10273 for further information. BUK9C10-65BIT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 © NXP B.V. 2010. All rights reserved. 3 of 15 BUK9C10-65BIT NXP Semiconductors N-channel TrenchPLUS logic level FET 001aal528 120 003aab388 120 ID (A) Pder (%) 90 80 (1) 60 40 30 0 0 0 50 100 150 0 200 50 Tmb (°C) 100 150 200 Tsp (°C) (1)Current is limited by package Fig 1. Continuous drain current as a function of solder point temperature Fig 2. Normalized total power dissipation as a function of solder point temperature 001aal678 102 IAL (A) (1) 10 (2) 1 (3) 10−1 10−3 10−2 10−1 1 10 tAL (ms) Fig 3. Single-Pulse and repetitive avalanche rating; avalanche current as a function of avalanche time. BUK9C10-65BIT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 © NXP B.V. 2010. All rights reserved. 4 of 15 BUK9C10-65BIT NXP Semiconductors N-channel TrenchPLUS logic level FET 001aal754 103 Limit RDSon = VDS / ID ID (A) tp = 10 μs 102 100 μs 10 DC 1 ms 1 10 ms 100 ms 10−1 10−2 1 102 10 VDS (V) Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 - - 0.73 K/W Rth(j-a) thermal resistance from junction to ambient - 61 - K/W 001aal530 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10−1 0.1 0.05 0.02 10−2 single shot δ= P t tp 10−3 10−6 tp T T 10−5 10−4 10−3 10−2 10−1 1 tp (s) Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9C10-65BIT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 © NXP B.V. 2010. All rights reserved. 5 of 15 BUK9C10-65BIT NXP Semiconductors N-channel TrenchPLUS logic level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 65 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 59 - - V VGSth gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10; see Figure 11 1 1.5 2 V ID = 1 mA; VDS = VGS; Tj = 150 °C; see Figure 10; see Figure 11 0.5 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10; see Figure 11 - - 2.3 V IDSS drain leakage current VDS = 52 V; VGS = 0 V; Tj = 25 °C - 0.02 3 µA VDS = 52 V; VGS = 0 V; Tj = 150 °C - - 125 µA IGSS gate leakage current VDS = 0 V; VGS = 15 V; Tj = 25 °C - 2 300 nA RDSon drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 - - 11 mΩ VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 13; see Figure 12 - 8.5 10 mΩ VGS = 5 V; ID = 25 A; Tj = 150 °C; see Figure 13; see Figure 12 - - 20 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13; see Figure 12 - - 8.3 mΩ 8094 8993 9892 A/A ID/Isense ratio of drain current to VGS = 5 V; Tj = 25 °C; see Figure 14 sense current SF(TSD) temperature sense diode temperature coefficient IF = 250 µA; 25 °C ≤ Tj ≤ 150 °C; see Figure 15 -5.4 -5.7 -6 mV/K VF(TSD) temperature sense diode forward voltage IF = 250 µA; Tj = 25 °C; see Figure 15 2.855 2.9 2.945 V ID = 20 A; VDS = 52 V; VGS = 5 V; see Figure 16 - 59.6 - nC - 10.4 - nC - 21.6 - nC - 4170 - pF - 521 - pF - 194 - pF - 40 - ns - 113 - ns - 193 - ns - 108 - ns - 0.9 - nH Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time LD internal drain inductance BUK9C10-65BIT Product data sheet VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 17 VDS = 30 V; RL = 1.5 Ω; VGS = 5 V; RG(ext) = 10 Ω from pin to center of die All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 © NXP B.V. 2010. All rights reserved. 6 of 15 BUK9C10-65BIT NXP Semiconductors N-channel TrenchPLUS logic level FET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit LS internal source inductance from source lead to source bonding pad - 2 - nH Source-drain diode VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; see Figure 18 - 0.85 1.2 V trr reverse recovery time - 51 - ns Qr recovered charge IS = 10 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 30 V - 0.12 - nC 003a a d970 200 ID (A) 10 5.0 4.5 4.0 3.5 RDSon (mΩ) 30 150 3.0 100 50 20 10 VGS (V) =2.5 V 0 0 0 Fig 6. 001aal529 40 2 4 6 Output characterizations; drain current as a function of drain-source voltage; typical values. BUK9C10-65BIT Product data sheet 0 8 VDS (V) 10 Fig 7. 2 4 6 8 10 VGS (V) Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 © NXP B.V. 2010. All rights reserved. 7 of 15 BUK9C10-65BIT NXP Semiconductors N-channel TrenchPLUS logic level FET 001aam028 120 ID (A) 100 003a a d972 500 gfs (S ) 400 80 300 60 200 40 100 20 Tj = 150 °C Tj = 25 °C 0 0 0 1 2 3 4 0 5 15 30 45 VGS (V) Fig 8. Transfer Characteristics; drain current as a function of gate-source voltage; typical values. 001aam029 2.5 2.0 001aam030 10−1 min 10−3 typ typ max 10−4 min 1.0 10−5 0.5 10−6 0 60 120 180 0 Tj (°C) 1 2 3 VGS (V) Fig 10. Gate-source threshold voltage as a function of junction temperature. Product data sheet Forward transconductance as a function of drain current; typical values. 10−2 max 1.5 BUK9C10-65BIT 60 ID (A) VGS(th) (V) 0 −60 Fig 9. I D (A) Fig 11. Sub-threshold drain current as a function of gate-source voltage. All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 © NXP B.V. 2010. All rights reserved. 8 of 15 BUK9C10-65BIT NXP Semiconductors N-channel TrenchPLUS logic level FET 003a a d978 80 2.5 RDS on (mΩ) 003a a d973 2 3.54.0 3.0 a 60 1.5 40 1 4.5 0.5 20 5.0 VGS (V) =10 V 0 0 50 100 150 I D (A) Fig 12. Drain-source on-state resistance as a function of drain current; typical values 003a a d974 12000 0 -60 200 60 120 Tj ( C) 180 Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature 003a a d787 4 I D/I s ens e VF(TSD) (V) 8000 3 4000 2 0 0 1 2 4 6 8 VGS (V) 10 Fig 14. Ratio of drain current to sense current as a function of gate-source voltage; typical values BUK9C10-65BIT Product data sheet 0 50 100 Tj ( C) 150 Fig 15. Temperature sense diode forward voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 © NXP B.V. 2010. All rights reserved. 9 of 15 BUK9C10-65BIT NXP Semiconductors N-channel TrenchPLUS logic level FET 003a a d976 5 003a a d977 104 VGS (V) C (pF) 4 VDS = 14 V Cis s 103 VDS = 52 V 3 Cos s 2 102 Crs s 1 0 0 20 40 QG (nC) 10 10-1 60 1 10 VDS (V) 102 Tj = 25°C; ID = 10A Fig 16. Gate-source voltage as a function of turn-on gate charge; typical values Fig 17. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 001aam027 120 Is (A) 90 60 30 Tj = 150 °C Tj = 25 °C 0 0 0.5 1 1.5 2 VSD (V) Fig 18. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK9C10-65BIT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 © NXP B.V. 2010. All rights reserved. 10 of 15 BUK9C10-65BIT NXP Semiconductors N-channel TrenchPLUS logic level FET 7. Package outline Plastic single-ended surface-mounted package (D2PAK); 7 leads (one lead cropped) SOT427 A A1 E D1 mounting base D HD 4 1 Lp 7 b e e e e e c e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A A1 b c D max. D1 E e Lp HD Q 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 1.27 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-03-09 06-03-16 SOT427 Fig 19. Package outline SOT427 (D2PAK) BUK9C10-65BIT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 © NXP B.V. 2010. All rights reserved. 11 of 15 BUK9C10-65BIT NXP Semiconductors N-channel TrenchPLUS logic level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK9C10-65BIT v.2 20100621 Product data sheet - BUK9C10-65BIT v.1 Modifications: BUK9C10-65BIT v.1 BUK9C10-65BIT Product data sheet • Status changed from preliminary to product. 20100531 Preliminary data sheet - All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 - © NXP B.V. 2010. All rights reserved. 12 of 15 BUK9C10-65BIT NXP Semiconductors N-channel TrenchPLUS logic level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 9.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BUK9C10-65BIT Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 © NXP B.V. 2010. All rights reserved. 13 of 15 BUK9C10-65BIT NXP Semiconductors N-channel TrenchPLUS logic level FET Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BUK9C10-65BIT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 © NXP B.V. 2010. All rights reserved. 14 of 15 BUK9C10-65BIT NXP Semiconductors N-channel TrenchPLUS logic level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 June 2010 Document identifier: BUK9C10-65BIT