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Analog Power
AM3993P
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
•
Miniature TSOP-6 Surface Mount Package
Saves Board Space
PRODUCT SUMMARY
VDS (V)
rDS(on) (OHM)
0.130 @ VGS = -10V
-30
0.190 @ VGS = -4.5V
TSOP-6
Top View
ID (A)
-2.5
-1.9
S2
S1
G1
S2
1
2
6
5
D1
S1
G2
3
4
D2
G2
G1
D1
P-Channel MOSFET
D2
P-Channel MOSFET
o
ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
VDS
-30
Drain-Source Voltage
V
VGS
±20
Gate-Source Voltage
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
-2.5
ID
IDM
-10
IS
±1.6
o
TA=25 C
a
Power Dissipation
o
TA=70 C
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
A
1.15
PD
W
0.7
TJ, Tstg -55 to 150
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
A
-1.9
Symbol
Typ
Max
RthJA
93
130
110
150
o
C
o
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
February, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3993_B
C/W
Analog Power
AM3993P
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = -250 uA
Min
Limits
Unit
Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
ID(on)
Drain-Source On-Resistance
Forward Tranconductance
A
A
Diode Forward Voltage
Dynamic
IDSS
rDS(on)
g fs
VSD
-1.00
VDS = 0 V, VGS = +/-20 V
±100
nA
VDS = -24 V, VGS = 0 V
-1
-10
uA
VDS = -24 V, VGS = 0 V, T J = 55oC
VDS = -5 V, VGS = -10 V
VGS = -10 V, ID = -2.5 A
VGS = -4.5 V, ID = -1.9 A
-3
A
0.130
0.190
Ω
VDS = -5 V, ID = -2.5 A
IS = -1.6 A, VGS = 0 V
3
-0.70
S
V
VDS = -5 V, VGS = -4.5 V,
ID = -2.5 A
6.0
0.80
1.30
nC
P-Channel VDS =-15V, VGS =0V, f=1MHz
451
130
33
pF
VDD = -5 V, RL = 5 OHM,
VGEN = -4.5 V, RG = 6 OHM
6.5
20
31
21
ns
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
t d(on)
tr
td(off)
tf
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of
the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential
or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products
are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal
injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall
indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an
Equal Opportunity/Affirmative Action Employer.
2
February, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3993_B
Analog Power
AM3993P
Typical Electrical Characteristics (P-Channel)
5
5
VGS=-10V
T A = -55oC
-4.5V
3
2
-3.0V
1
125oC
3
2
1
0
0
0
0.5
1
1.5
2
2.5
1.5
2
2.5
V DS - Drain-to-Source Voltage (V)
3.5
4
Transfer Characteristics
250
2.5
rDS(ON), Normalized ON-Resistance
3
V GS - Gate-to-Source Voltage (V)
Output Characteristics
C - Capacitance (pF)
200
2.0
-4.5V
1.5
-10V
1.0
CISS
150
100
COSS
50
CRSS
0
0.5
0
1
2
3
4
0
5
5
10
15
20
25
30
V DS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
rDS(ON) - On-Resistance (Normalized)
-10
VGS - Gate-to-Source Voltage ( V
25oC
4
ID - Drain Current (A)
ID - Drain Current (A)
4
-8
-6
-4
-2
VGS = -10V
1.4
1.2
1
0.8
0.6
0
0
2
4
6
8
10
-50
12
-25
0
25
50
75
100
125
o
TJ - Junction Temperature ( C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
3
February, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3993_B
150
Analog Power
AM3993P
Typical Electrical Characteristics (P-Channel)
0.4
rDS(ON) - On-Resistance (OHM)
10
IS - Source Current (A)
1
T A = 125oC
0.1
25oC
0.01
0.001
0.0001
0.0
0.2
0.4
0.6
0.8
1.0
0.3
0.2
0.1
0
1.2
2
4
V SD, - Source-to-Drain Voltage (V)
6
8
10
V GS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs.Gate-to Source Voltage
30
2.2
ID = -250µA
20
Power (W)
V GS(th) Variance (V)
2
1.8
1.6
10
1.4
0
1.2
-50
-25
0
25
50
75
100
125
0.01
150
0.1
1
Threshold Voltage
Single Pulse Power
D =0.5
RθJA (t) = r(t) * RθJA
0.2
0.1
Impedance
Normalized Effective Transient Thermal
1
10
Time (sec)
o
TJ - Temperature ( C)
RθJA = 125 °C/W
0.1
0.05
P(pk
0.02
t1
0.01
t2
0.01
SINGLE PULSE
0.001
0.0001
TJ - TA = P *
RθJA (t)
Duty Cycle, D = t1
/t
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
February, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3993_B
100
Analog Power
AM3993P
Package Information
TSOP-6: 6LEAD
5
February, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3993_B