Si2316BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RT1 34.4753 N/A N/A RT2 11.8465 N/A N/A RT3 43.1388 N/A N/A RT4 40.5394 N/A N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CT1 4.1988 m N/A N/A CT2 195.6827 u N/A N/A CT3 2.2996 N/A N/A CT4 20.7664 m N/A N/A This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 68302 Revision: 19-Dec-07 www.vishay.com 1 Si2316BDS_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RF1 12.0886 N/A N/A RF2 44.0380 N/A N/A RF3 31.3340 N/A N/A RF4 42.5394 N/A N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CF1 154.9423 u N/A N/A CF2 3.0589 m N/A N/A CF3 19.6200 m N/A N/A CF4 2.2954 N/A N/A Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 68302 Revision: 19-Dec-07 Si2316BDS_RC Vishay Siliconix Document Number: 68302 Revision: 19-Dec-07 www.vishay.com 3