New Product Si2316BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.050 at VGS = 10 V 4.5 0.080 at VGS = 4.5 V 3.4 Qg (Typ) • PWM Optimized • 100 % Rg tested 3.16 nC RoHS COMPLIANT APPLICATIONS • Battery Switch • DC/DC Converter TO-236 (SOT-23) G 1 3 S D 2 Top View Si2316DS (M6)* *Marking Code Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Limit 30 ± 20 4.5 3.6 ID 3.9b, c 3.13b, c 20 1.39 1.04b, c 1.66 1.06 1.25b, c 0.8b, c - 55 to 150 IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range IS PD TJ, Tstg Unit V A W °C THERMAL RESISTANCE RATINGS Parameter ≤ 5 sec Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. Maximum under Steady State conditions is 130 °C/W. Document Number: 70445 S-71330-Rev. A, 02-Jul-07 Symbol RthJA RthJF Typical 80 60 Maximum 100 75 Unit °C/W www.vishay.com 1 New Product Si2316BDS Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VDS = 0 V, ID = 250 µA 30 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 23.92 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs VDS ≥ 5 V, VGS = 10 V 5.2 1 20 µA A VGS = 10 V, ID = 3.9 A 0.041 0.050 VGS = 4.5 V, ID = 3.3 A 0.064 0.080 VDS = 15V, ID = 3.9 A 6 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 350 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 3.9 A VDS = 15 V, VGS = 4.5 V, ID = 3.9 A tr Rise Time td(off) Turn-Off Delay Time f = 1 MHz VDD = 15 V, RL = 4.8 Ω ID ≅ 3.13 A, VGEN = 10 V, RG = 1 Ω tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = 15 V, RL = 6.25 Ω ID = 2.4 A, VGEN = 4.5 V, RG = 1 Ω tf Fall Time pF 6.35 9.6 3.16 4.8 1.56 nC 1.1 td(on) Turn-On Delay Time 65 37 2.6 3.9 4.5 6.75 11 16.5 12 18 7 10.5 20 30 65 98 11 17 23 35 Ω ns ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 1.39 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 20 IS = 2.0 A IF = 2.0 A, di/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 10 15 ns 4 6 nC 6.6 3.5 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70445 S-71330-Rev. A, 02-Jul-07 New Product Si2316BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 3 15 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 thru 5 V 10 VGS = 4 V 2 1 TJ = 25 °C 5 TJ = 125 °C VGS = 3 V 0 1 2 3 4 0 5 1 2 3 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 0.16 5 24 30 400 VGS = 4.5 V 0.12 0.08 300 Ciss 200 Coss VGS = 10 V 0.04 100 0.00 Crss 0 0 4 8 12 16 20 0 6 12 18 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 10 ID = 3.9 A VGS = 10 V, I D = 3.9 A 1.6 8 VDS = 16 V rDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 4 500 C - Capacitance (pF) rDS(on) - On-Resistance (Ω) TJ = - 55 °C 0 0 6 VDS = 24 V 4 2 1.4 1.2 VGS = 4.5 V, ID = 3.3 A 1.0 0.8 0 0 Document Number: 70445 S-71330-Rev. A, 02-Jul-07 2 4 6 8 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 www.vishay.com 3 New Product Si2316BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.12 rDS(on) - Drain-to-Source On-Resistance (Ω) 100 I S - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.0 ID = 4.1 A 0.09 TA = 125 °C 0.06 0.03 TA = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 8 10 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 2.6 10 2.4 8 2.2 ID = 250 µA 2.0 TA = 25 °C Single Pulse 6 Power (W) VGS(th) (V) 6 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 4 1.8 2 1.6 1.4 - 50 - 25 0 25 50 75 100 125 0 0.01 150 1 10 Time (sec) 0.1 TJ - Temperature ( C) Threshold Voltage 100 600 Single Pulse Power 100 *rDS(on) Limited I D - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 dc 0.01 TA = 25 °C Single Pulse 0.001 0.1 1 *VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 70445 S-71330-Rev. A, 02-Jul-07 New Product Si2316BDS Vishay Siliconix 5 2.0 4 1.6 3 1.2 Power ID - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 0.8 1 0.4 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Foot *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 130 °C/W 3. T JM Single Pulse 0.01 10- 4 10- 3 TA = PDMZthJA(t) 4. Surface Mounted 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70445 Document Number: 70445 S-71330-Rev. A, 02-Jul-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1