Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT60N03H-H
Power MOSFET
20A, 30V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UTT60N03H-H is an N-channel Power MOSFET, it
uses UTC’s advanced technology to provide the customers with high
switching speed, low CRSS and low gate charge.
The UTC UTT60N03H-H is suitable for high power density
DC/DC and embedded DC/DC applications.

FEATURES
* RDS(ON) < 5.5mΩ @ VGS=10V, ID=10A
RDS(ON) < 8.5mΩ @ VGS=4.5, ID=8A
* High switching speed
* Low CRSS
* Low gate change

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:
UTT60N03HG-K08-5060-R
Pin Assignment: G: Gate
D: Drain
UTT60N03HG-K08-5060-R

Package
DFN-8(5×6)
S: Source
1
S
2
S
Pin Assignment
3 4 5 6 7
S G D D D
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) K08-5060: DFN-8(5×6)
(3)Green Package
G: Halogen Free and Lead Free
8
D
Packing
Tape Reel
MARKING
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UTT60N03H-H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
+20, -16
V
Drain Current
Continuous
TC=25°C
ID
20 (Note 6)
A
(TJ=150°C)
80
A
Pulsed (t=300us)
IDM
Continuous Source-Drain Diode
TC=25°C
14.1 (Note 6)
A
IS
Current
3.2 (Note 2, 3)
TA=25°C
Avalanche Current (L=0.1mH)
IAR
15
A
Single Pulsed Avalanche Energy (L=0.1mH)
EAS
11.25
mJ
Power Dissipation
TC=25°C
PD
31.2
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Soldering Recommendations (Peak Temperature)
260
°C
(Note 4)
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 2, 5)
t≤10s
θJA
34
°C/W
Junction to Case (Drain)
Steady State
θJC
4
°C/W
Notes: 1. Based on TC=25°C
2. Surface mounted on 1"x1" FR4 board.
3. t=10s
4. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
5. Maximum under steady state conditions is 70°C/W
6. Package limited
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(TH) Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note 1)
On State Drain Current
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
SYMBOL
TEST CONDITIONS
BVDSS
ID=250µA, VGS=0V
△VDS/TJ
ID=250uA
△VGS(TH)/TJ
VDS=30V, VGS=0V
IDSS
VDS=30V, VGS=0V, TJ=55°C
VGS=+20V, VDS=0V
IGSS
VGS=-16V, VDS=0V
VGS(TH)
RDS(ON)
ID(ON)
CISS
COSS
CRSS
QG
VDS=VGS, ID=250µA
VGS=10V, ID=10A
VGS=4.5V, ID=8A
VDS≥5V, VGS=10V
TYP
MAX
30
1.1
mV/°C
1
10
+100
-100
µA
µA
nA
nA
2.2
5.5
8.5
V
30
0.4
mΩ
A
1450
445
38
VGS=10V, VDS=15V, ID=10A
UNIT
V
20
-4.6
VGS=0V, VDS=15V, f=1MHz
VGS=4.5V, VDS=15V, ID=10A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Gate Resistance
RG
f=1MHz
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=15V, ID≈10A, RL=1.5Ω,
V
Turn-OFF Delay Time
tD(OFF)
GEN=10V, RG=1Ω
Fall-Time
tF
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=15V, ID≈10A, RL=1.5Ω,
VGEN=4.5V, RG=1Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
TC=25°C
Maximum Body-Diode Pulsed Current
ISM
(Note 1)
Drain-Source Diode Forward Voltage
VSD
IS=3A
Body Diode Reverse Recovery Time
tRR
Body Diode Reverse Recovery Charge
QRR
IF=10A, dI/dt=100A/µs,
TJ=25°C
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes: 1. Pulse test; pulse width ≤30µs, duty cycle ≤2%
2. Guaranteed by design, not subject to production testing
UNISONIC TECHNOLOGIES CO., LTD
MIN
19.4
9.4
4
1.8
1.65
9
8
18
8
15
12
18
9
0.76
24
14
12
12
pF
pF
pF
29
14
nC
nC
3.3
18
16
36
16
30
24
36
18
nC
Ω
ns
ns
ns
ns
ns
ns
ns
ns
14.1
A
80
A
1.1
48
28
V
ns
nC
ns
ns
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UTT60N03H-H
Preliminary
UNISONIC TECHNOLOGIES CO., LTD
Power MOSFET
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UTT60N03H-H
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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