UNISONIC TECHNOLOGIES CO., LTD 4NM60 Preliminary Power MOSFET 4.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 4NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications. FEATURES * RDS(ON) < 1.5Ω @ VGS = 10V, ID = 2.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4NM60L-TA3-T 4NM60G-TA3-T 4NM60L-TF3-T 4NM60G-TF3-T 4NM60L-TF1-T 4NM60G-TF1-T 4NM60L-TF2-T 4NM60G-TF2-T 4NM60L-TM3-T 4NM60G-TM3-T 4NM60L-TMS-T 4NM60G-TMS-T 4NM60L-TN3-R 4NM60G-TN3-R Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 TO-251 TO-251S TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tape Reel 1 of 7 QW-R205-139.d 4NM60 Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-139.d 4NM60 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Continuous ID 4.0 A Drain Current Pulsed (Note2) IDM 16 A Avalanche Current (Note 2) IAR 2.8 A Avalanche Energy Single Pulsed (Note3) EAS 39 mJ Peak Diode Recovery dv/dt (Note4) dv/dt 4.6 V/ns TO-220 106 W TO-220F 34 W Power Dissipation PD TO-220F1/TO-220F2 36 W TO-251/TO-251S 50 W TO-252 Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L=10mH, IAS=2.8A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤4.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL RESISTANCES CHARACTERISTICS PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-251/TO-251S TO-252 TO-220 TO-220F/TO-220F1 Junction to Case TO-220F2 TO-251/TO-251S TO-252 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS UNIT 62.5 °C/W 110 °C/W 1.18 3.67 3.47 °C/W °C/W °C/W 2.5 °C/W θJA θJC 3 of 7 QW-R205-139.d 4NM60 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS= 0 V, ID = 250μA VDS= 600 V, VGS = 0 V VGS= 30 V, VDS = 0 V VGS= -30 V, VDS = 0 V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS= VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS= 10 V, ID = 2.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) QG VDS=50V, VGS=10V, ID=1.3A, Gate to Source Charge QGS IG=100μA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time (Note 1) tD(ON) VDD=30V, VGS=10V, ID=0.5A, Rise Time tR RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD IS=4.0A, VGS=0V Body Diode Reverse Recovery Time (Note 1) trr IS=4.0A, VGS=0V dIF/dt=100A/μs Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 2.5 10 100 -100 V μA nA nA 4.5 1.5 V Ω 256 165 16 pF pF pF 37.5 4.0 8.0 40 50 100 35 nC nC nC ns ns ns ns 4.0 16 1.4 240 1.9 A A V ns μC 4 of 7 QW-R205-139.d 4NM60 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-139.d 4NM60 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDD VGS RG D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-139.d 4NM60 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-139.d