datasheet

SKiiP 1803 GB172-3DFW V3
Absolute Maximum Ratings
Symbol
Ts = 25°C unless otherwise specified
Conditions
Values
Unit
V
System
SKiiP® 3
VCC 1)
Operating DC link voltage
1200
Visol
DC, t = 1 s, main terminals to heat sink
5600
V
It(RMS)
per AC terminal, Tterminal <115°C
400
A
IFSM
Tj = 150 °C, tp = 10 ms, sin 180°
10200
A
I²t
Tj = 150 °C, tp = 10 ms, diode
520
kA²s
fout
fundamental output frequency
1
kHz
Tstg
storage temperature
-40 ... 85
°C
IGBT
2-pack-integrated intelligent
Power System
VCES
IC
Tj = 25 °C
Tj = 150 °C
1700
V
Ts = 25 °C
1744
A
Ts = 70 °C
1346
A
ICnom
SKiiP 1803 GB172-3DFW V3
Tj
Features
IF
•
•
•
•
•
•
•
•
Typical Applications*
•
•
•
•
Renewable energies
Traction
Elevators
Industrial drives
1800
A
-40 ... 150
°C
Diode
VRRM
SKiiP technology inside
Trench IGBTs
CAL diode technology
Integrated current sensor
Integrated temperature sensor
Integrated heat sink
Fiber optic interface
UL recognized File no. E63532
junction temperature
Tj = 25 °C
Tj = 150 °C
1700
V
Ts = 25 °C
1454
A
Ts = 70 °C
1110
A
IFnom
Tj
junction temperature
1400
A
-40 ... 150
°C
V
Driver
Vs
power supply
13 ... 30
ViH
input signal voltage (high)
15 + 0.3
V
VisolPD
QPD <= 10pC, PRIM to POWER
1500
V
dv/dt
secondary to primary side
75
kV/µs
fsw
switching frequency
9
kHz
Characteristics
Symbol
Ts = 25°C unless otherwise specified
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
1.9
2.4
V
Tj = 125 °C
2.2
Tj = 25 °C
1.00
1.20
V
Tj = 125 °C
0.90
1.10
V
Tj = 25 °C
0.99
1.3
mΩ
Tj = 125 °C
1.4
1.7
mΩ
VCC = 900 V
585
mJ
VCC = 1200 V
863
mJ
IGBT
VCE(sat)
Footnote
With assembly of suitable MKP capacitor
per terminal
1)
IC = 900 A
at terminal
VCE0
rCE
Eon + Eoff
at terminal
IC = 900 A
Tj = 125 °C
V
Rth(j-s)
per IGBT switch
0.017
K/W
Rth(j-r)
per IGBT switch
0.016
K/W
S33
© by SEMIKRON
Rev. 0 – 27.04.2015
1
SKiiP 1803 GB172-3DFW V3
Characteristics
Symbol
Ts = 25°C unless otherwise specified
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
2.00
2.15
V
Tj = 125 °C
1.80
Tj = 25 °C
1.1
1.2
V
Tj = 125 °C
0.8
0.9
V
Diode
VF = VEC
IF = 900 A
at terminal
VF0
rF
SKiiP® 3
Err
2-pack-integrated intelligent
Power System
SKiiP 1803 GB172-3DFW V3
Features
•
•
•
•
•
•
•
•
SKiiP technology inside
Trench IGBTs
CAL diode technology
Integrated current sensor
Integrated temperature sensor
Integrated heat sink
Fiber optic interface
UL recognized File no. E63532
Typical Applications*
•
•
•
•
Renewable energies
Traction
Elevators
Industrial drives
IF = 900 A
Tj = 125 °C
Tj = 25 °C
1
1.1
mΩ
Tj = 125 °C
1.1
1.2
mΩ
VR = 900 V
108
mJ
VR = 1200 V
128
mJ
Rth(j-s)
per diode switch
0.033
K/W
Rth(j-r)
per diode switch
0.042
K/W
Driver
Vs
supply voltage non stabilized
IS0
bias current @Vs=24V, fsw = 0, IAC = 0
Is
k1 = 42 mA/kHz, k2 = 0.00044 mA/A2
VIT+
input threshold voltage (HIGH)
VIT-
input threshold voltage (LOW)
RIN
input resistance
CIN
input capacitance
tpRESET
error memory reset time
tTD
top / bottom switch interlock time
tjitter
jitter clock time
tSIS
short pulse suppression time
ITRIPSC
over current trip level
1837
Ttrip
over temperature trip level
110
VDCtrip
over voltage trip level,
input-output
turn-on
VCC = 1200 V
propagation time
IC = 900 A
input-output
Tj = 25 °C
turn-off
propagation time
td(on)IO
td(off)IO
Footnote
System
With assembly of suitable MKP capacitor
per terminal
Rth(r-a)
1)
at terminal
V
13
24
30
300
= 300
V
mA
+ k1* fsw
+ k2 * IAC2
12.3
mA
V
4.6
10
V
kΩ
1
nF
0.0122
ms
3
µs
125
ns
0.625
0.7
µs
1875
1912
APEAK
115
120
°C
not impl.
V
1.4
µs
1.4
µs
RCC'+EE'
flow rate=8l/min, TFluid=50°C, water/
glycol ratio 50%:50%
terminals to chip, Ts = 25 °C
0.17
mΩ
LCE
commutation inductance
4
nH
CCHC
per phase, AC-side
3
nF
ICES + IRD
VGE = 0 V, VCE = 1700 V, Tj = 25 °C
Mdc
DC terminals, SI Units
6
Mac
AC terminals, SI Units
13
w
SKiiP System w/o heat sink
2.4
kg
wh
heat sink
5.2
kg
0.011
3.6
K/W
mA
8
Nm
15
Nm
S33
2
Rev. 0 – 27.04.2015
© by SEMIKRON
SKiiP 1803 GB172-3DFW V3
© by SEMIKRON
Rev. 0 – 27.04.2015
3
SKiiP 1803 GB172-3DFW V3
Fig. 1: Typical IGBT output characteristic
Fig. 2: Typical diode output characteristics
Fig. 3: Typical energy losses E = f(Ic, Vcc)
Fig. 4: Typical energy losses E = f(Ic, Vcc)
Fig. 5: Pressure drop Δp versus flow rate V
Fig. 6: Transient thermal impedance Zth(j-r)
4
Rev. 0 – 27.04.2015
© by SEMIKRON
SKiiP 1803 GB172-3DFW V3
Fig. 7: Transient thermal impedance Zth(r-a)
Fig. 8: Coefficients of thermal impedances
Fig. 9: Thermal resistance Rth(r-a) versus flow rate V
© by SEMIKRON
Rev. 0 – 27.04.2015
5
SKiiP 1803 GB172-3DFW V3
System
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
6
Rev. 0 – 27.04.2015
© by SEMIKRON
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