datasheet

SKiiP 2013 GB172-4DL V3
Absolute Maximum Ratings
Symbol
Ts = 25°C unless otherwise specified
Conditions
Values
Unit
V
System
SKiiP® 3
VCC 1)
Operating DC link voltage
1200
Visol
DC, t = 1 s, main terminals to heat sink
5600
V
It(RMS)
per AC terminal, Tterminal <115°C
400
A
IFSM
Tj = 150 °C, tp = 10 ms, sin 180°
13500
A
I²t
Tj = 150 °C, tp = 10 ms, diode
911
kA²s
fout
fundamental output frequency
1
kHz
Tstg
storage temperature
-40 ... 85
°C
IGBT
2-pack-integrated intelligent
Power System
VCES
IC
Tj = 25 °C
Tj = 150 °C
1700
V
Ts = 25 °C
2102
A
Ts = 70 °C
1617
A
ICnom
SKiiP 2013 GB172-4DL V3
Tj
Features
IF
•
•
•
•
•
•
•
Typical Applications*
•
•
•
•
Renewable energies
Traction
Elevators
Industrial drives
1) With assembly of suitable MKP capacitor
per terminal
Tj = 25 °C
A
°C
Tj = 150 °C
1700
V
Ts = 25 °C
1758
A
Ts = 70 °C
1338
A
IFnom
Tj
junction temperature
1650
A
-40 ... 150
°C
V
Driver
Vs
power supply
13 ... 30
ViH
input signal voltage (high)
15 + 0.3
V
VisolPD
QPD <= 10pC, PRIM to POWER
1500
V
dv/dt
secondary to primary side
75
kV/µs
fsw
switching frequency
7
kHz
Characteristics
Symbol
Footnotes
2000
-40 ... 150
Diode
VRRM
SKiiP technology inside
Trench IGBTs
CAL diode technology
Integrated current sensor
Integrated temperature sensor
Integrated heat sink
UL recognized File no. E63532
junction temperature
Ts = 25°C unless otherwise specified
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
1.9
2.4
V
Tj = 125 °C
2.2
Tj = 25 °C
1.00
1.20
V
Tj = 125 °C
0.90
1.10
V
Tj = 25 °C
0.75
0.95
mΩ
Tj = 125 °C
1.1
1.3
mΩ
VCC = 900 V
780
mJ
VCC = 1200 V
1150
mJ
IGBT
VCE(sat)
IC = 1200 A
at terminal
VCE0
rCE
Eon + Eoff
at terminal
IC = 1200 A
Tj = 125 °C
V
Rth(j-s)
per IGBT switch
0.015
K/W
Rth(j-r)
per IGBT switch
0.015
K/W
S43
© by SEMIKRON
Rev. 0 – 14.05.2014
1
SKiiP 2013 GB172-4DL V3
Characteristics
Symbol
Ts = 25°C unless otherwise specified
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
2.00
2.15
V
Tj = 125 °C
1.80
Tj = 25 °C
1.1
1.2
V
Tj = 125 °C
0.8
0.9
V
Tj = 25 °C
0.74
0.8
mΩ
Tj = 125 °C
0.8
0.9
mΩ
VR = 900 V
144
mJ
VR = 1200 V
171
mJ
Diode
VF = VEC
IF = 1200 A
at terminal
VF0
rF
SKiiP® 3
Err
2-pack-integrated intelligent
Power System
SKiiP 2013 GB172-4DL V3
Features
•
•
•
•
•
•
•
SKiiP technology inside
Trench IGBTs
CAL diode technology
Integrated current sensor
Integrated temperature sensor
Integrated heat sink
UL recognized File no. E63532
Typical Applications*
•
•
•
•
Renewable energies
Traction
Elevators
Industrial drives
at terminal
IF = 1200 A
Tj = 125 °C
V
Rth(j-s)
per diode switch
0.029
K/W
Rth(j-r)
per diode switch
0.048
K/W
Driver
Vs
supply voltage non stabilized
IS0
bias current @Vs=24V, fsw = 0, IAC = 0
Is
k1 = 55 mA/kHz, k2 = 0.00035 mA/A2
VIT+
input threshold voltage (HIGH)
VIT-
input threshold voltage (LOW)
RIN
input resistance
CIN
input capacitance
tpRESET
error memory reset time
tTD
top / bottom switch interlock time
tjitter
jitter clock time
tSIS
short pulse suppression time
ITRIPSC
over current trip level
2450
Ttrip
over temperature trip level
110
VDCtrip
over voltage trip level,
input-output
turn-on
VCC = 1200 V
propagation time
IC = 1200 A
input-output
Tj = 25 °C
turn-off
propagation time
td(on)IO
Footnotes
td(off)IO
1) With assembly of suitable MKP capacitor
per terminal
System
13
24
30
330
= 330
V
mA
+ k1* fsw
+ k2 * IAC2
12.3
mA
V
4.6
10
V
kΩ
1
nF
0.0122
ms
3
µs
125
ns
0.625
0.7
µs
2500
2550
APEAK
115
120
°C
not impl.
V
1.4
µs
1.4
µs
Rth(r-a)
flow rate=390m3/h, Ta=25°C, 500m
above sea level
RCC'+EE'
terminals to chip, Ts = 25 °C
LCE
commutation inductance
CCHC
per phase, AC-side
6.8
nF
ICES + IRD
VGE = 0 V, VCE = 1700 V, Tj = 25 °C
4.8
mA
Mdc
DC terminals, SI Units
6
Mac
AC terminals, SI Units
13
w
SKiiP System w/o heat sink
wh
heat sink
0.0255
K/W
0.13
mΩ
3
nH
8
Nm
15
Nm
3.1
kg
8
kg
S43
2
Rev. 0 – 14.05.2014
© by SEMIKRON
SKiiP 2013 GB172-4DL V3
© by SEMIKRON
Rev. 0 – 14.05.2014
3
SKiiP 2013 GB172-4DL V3
Fig. 1: Typical IGBT output characteristic
Fig. 2: Typical diode output characteristics
Fig. 3: Typical energy losses E = f(Ic, Vcc)
Fig. 4: Typical energy losses E = f(Ic, Vcc)
Fig. 5: Pressure drop Δp versus flow rate V
Fig. 6: Transient thermal impedance Zth(j-r)
4
Rev. 0 – 14.05.2014
© by SEMIKRON
SKiiP 2013 GB172-4DL V3
Fig. 7: Transient thermal impedance Zth(r-a)
Fig. 8: Coefficients of thermal impedances
Fig. 9: Thermal resistance Rth(r-a) versus flow rate V
© by SEMIKRON
Rev. 0 – 14.05.2014
5
SKiiP 2013 GB172-4DL V3
Heat sink
6
Rev. 0 – 14.05.2014
© by SEMIKRON
SKiiP 2013 GB172-4DL V3
System
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 0 – 14.05.2014
7
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