SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD GBLC03CI---GBLC24CI ULTRA LOW CAPACITANCE TVS ARRAY Features z z z z z z z z z z Small SOD-323 Package Bi-directional Configurations Peak Power Dissipation 350W @8 x 20 us Pulse Low Leakage Fast Response Time < 5 ns Protects One Power or I/O Port ESD Protection to IEC 61000-4-2 Level 4,15KV(Air), 8KV(Contanct) ESD Protection to IEC 61000-4-2 Level 4, 30A 16KV Human Body Model ESD Requirements RoHS Compliant in Lead-Free Versions Applications z z z z z z Cell Phone Handsets and Accessories Microprocessor Based Equipment Personal Digital Assistant (PDA) Notebooks, Desktops, and Servers Portable Instrumentation USB Interface Absolute Maximum Ratings Parameter Symbol Value Units PPK 350 W Air ±15 KV CONTACT ±8.0 KV 30 A VPP 16 KV TSTG -55 to 150 °C TJ -55 to 150 °C Peak Power Dissipation (Note 1.) @TL = 25°C IEC 61000-4-2 (ESD) IEC 61000-4-4 (EFT) ESD Voltage Storage Temperature Range Operating Junction Temperature Range Per Human Body Model 1. 8 X 20 us, non–repetitive ----------------------------------------------------------------------------------------------------------------------SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD GBLC03CI---GBLC24CI Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM IT Test Current VBR Breakdown Voltage @ IT Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. MARKI VRWM IR(uA) VBR (V) @ IT NG (V) @ VRWM Max Device IT(mA) Vc(V) Vc(V) C (Note 2) @Ip=1A @Ipp (pF) Max Min Max Max TYP GBLC03CI CC 3.0 20.0 4.0 1.0 5.15 13.9@8A 0.6 GBLC05CI AC 5.0 5.0 6.0 1.0 9.80 18.3@8A 0.6 GBLC08CI BC 8.0 5.0 8.5 1.0 13.40 18.5@8A 0.6 GBLC12CI DC 12.0 1.0 13.3 1.0 19.00 28.6@6A 0.6 GBLC15CI EC 15.0 1.0 16.7 1.0 24.00 31.8@5A 0.6 GBLC24CI HC 24.0 1.0 26.7 1.0 43.00 56.0@3A 0.6 *Surge current waveform per Figure 1. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25℃ Fig1. Pulse Waveform Fig2. Power Derating ----------------------------------------------------------------------------------------------------------------------SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD GBLC03CI—GBLC24CI Fig3. Peak Pulse Power vs Pulse Time Package Dimensions SOD-323 Dim Millimeters Inches MIN NOM MAX MIN NOM MAX A 0.80 0.90 1.00 0.031 0.035 0.040 A1 0.00 0.05 0.10 0.000 0.002 0.004 A3 0.15 REF 0.006 REF b 0.25 0.32 0.4 0.010 0.012 0.016 C 0.080 0.12 0.177 0.003 0.005 0.007 D 1.60 1.70 1.80 0.063 0.066 0.071 E 1.15 1.25 1.40 0.045 0.049 0.055 L 0.08 HE 2.30 0.098 0.106 0.003 2.50 2.70 0.090 ----------------------------------------------------------------------------------------------------------------------SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD