Alternative Device Available, Use CNY17 SFH601 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES A 1 6 B C 2 5 C NC 3 4 E • Isolation test voltage (1.0 s), 5300 VRMS • VCEsat 0.25 (≤ 0.4) V, IF = 10 mA, IC = 2.5 mA • Built to conform to VDE requirements • Highest quality premium device • Long term stability i179004-11 • Storage temperature, - 55 ° to + 150 °C i179004-3 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The SFH601 is an optocoupler with a gallium arsenide LED emitter which is optically coupled with a silicon planar phototransistor detector. The component is packaged in a plastic plug-in case 20 AB DIN 41866. AGENCY APPROVALS • UL1577, file no. E52744 system code H or J, double protection The coupler transmits signals between two electrically isolated circuits. • DIN EN 60747-5-5 (VDE 0884-5) available with option 1 • CSA 93751 • BSI IEC 60950; IEC 60065 ORDERING INFORMATION S F H 6 0 1 - # X CTR BIN PART NUMBER 0 # DIP Option 6 7.62 mm 10.16 mm Option 7 Option 9 # PACKAGE OPTION > 0.7 mm AGENCY CERTIFIED/PACKAGE UL, BSI, CSA DIP-6 > 0.1 mm CTR (%) 40 to 80 63 to 125 100 to 200 160 to 320 SFH601-1 SFH601-2 SFH601-3 SFH601-4 DIP-6, 400 mil, option 6 SFH601-1X006 SFH601-2X006 SFH601-3X006 SFH601-4X006 SMD-6, option 7 SFH601-1X007 SFH601-2X007T SFH601-3X007(T) SFH601-4X007(T) SMD-6, option 9 SFH601-1X009T SFH601-2X009 SFH601-3X009 SFH601-4X009(T) 40 to 80 63 to 125 100 to 200 160 to 320 SFH601-1X001 SFH601-2X001 - SFH601-4X001 VDE, cUL, UL, BSI DIP-6, option 1 DIP-6, 400 mil, option 6 SFH601-1X016 - SFH601-3X016 SFH601-4X016 SMD-6, option 7 SFH601-1X017 SFH601-2X017(T) SFH601-3X017(T) - SMD-6, option 9 - - SFH601-3X019(T) - Note • For additional information on the available options refer to option information. ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V DC forward current IF 60 mA Surge forward current Total power dissipation t = 10 μs IFSM 2.5 A Pdiss 100 mW Document Number: 83663 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.5, 19-Aug-13 Alternative Device Available, Use CNY17 SFH601 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage VCEO 100 V Emitter base voltage VEBO 7 V IC 50 mA IC 100 mA Pdiss 150 mW t = 1.0 s VISO 5300 VRMS VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to +100 °C Tj 100 °C Tsld 260 °C OUTPUT Collector current t = 1.0 ms Power dissipation COUPLER Isolation test voltage between emitter and detector Isolation resistance Junction temperature Soldering temperature (1) max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. 1.25 1.65 UNIT INPUT Forward voltage IF = 60 mA VF Breakdown voltage IR = 10 μA VBR Reverse current Capacitance 6 V V VR = 6 V IR 0.01 VF = 0 V, f = 1 MHz CO 25 pF Rthja 750 K/W Thermal resistance 10 μA OUTPUT Collector emitter capacitance f = 1 mHz, VCE = 5 V CCE 6.8 pF Collector base capacitance f = 1 mHz, VCB = 5 V CCB 8.5 pF Emitter base capacitance f = 1 mHz, VEB = 5 V CEB 11 pF Rthja 500 K/W SFH601-1 ICEO 2 50 SFH601-2 ICEO 2 50 nA SFH601-3 ICEO 5 100 nA SFH601-4 ICEO 5 100 nA IF = 10 mA, IC = 2.5 mA VCEsat 0.25 0.4 VI-O = 0, f = 1 MHz CIO 0.6 Thermal resistance Collector emitter leakage current VCE =10 V nA COUPLER Saturation voltage collector emitter Capacitance (input to output) V pF Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Document Number: 83663 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.5, 19-Aug-13 Alternative Device Available, Use CNY17 SFH601 www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION IF = 10 mA IC/IF at VCE = 5.0 V IF = 1 mA PART SYMBOL MIN. MAX. UNIT SFH601-1 CTR 40 TYP. 80 % SFH601-2 CTR 63 125 % SFH601-3 CTR 100 200 % SFH601-4 CTR 160 320 SFH601-1 CTR 13 30 % SFH601-2 CTR 22 45 % SFH601-3 CTR 34 70 % SFH601-4 CTR 56 90 % MIN. TYP. % Note • Current transfer ratio and collector emitter leakage current by dash number. SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MAX. UNIT NON-SATURATED Current VCC = 5 V, RL = 75 Ω IF 10 mA Rise time VCC = 5 V, RL = 75 Ω tr 2 μs Fall time VCC = 5 V, RL = 75 Ω tf 2 μs Turn-on time VCC = 5 V, RL = 75 Ω ton 3 μs Turn-off time VCC = 5 V, RL = 75 Ω toff 2.3 μs SATURATED Current Rise time Fall time Turn-on time Turn-off time IF SFH601-1 IF 20 mA SFH601-2 IF 10 mA SFH601-3 IF 10 mA SFH601-4 IF 0.5 mA SFH601-1 tr 2 μs SFH601-2 tr 3 μs SFH601-3 tr 3 μs SFH601-4 tr 4.6 μs SFH601-1 tf 11 μs SFH601-2 tf 14 μs SFH601-3 tf 14 μs SFH601-4 tf 15 μs SFH601-1 ton 3 μs μs SFH601-2 ton 4.2 SFH601-3 ton 4.2 μs SFH601-4 ton 6 μs SFH601-1 toff 18 μs SFH601-2 toff 23 μs SFH601-3 toff 23 μs SFH601-4 toff 25 μs RL = 7 5 Ω IC IF VCC = 5 V VCC = 5 V 47 Ω isfh601_01 1kΩ 47 Ω isfh601_02 Fig. 1 - Linear Operation (without Saturation) Fig. 2 - Switching Operation (with Saturation) Document Number: 83663 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.5, 19-Aug-13 Alternative Device Available, Use CNY17 SFH601 www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION Climatic classification SYMBOL MIN. according to IEC 68 part 1 Comparative tracking index TYP. MAX. UNIT 55/100/21 CTI 175 VIOTM 8000 VIORM 890 399 V V PSO 700 mW ISI 400 mA TSI 175 °C Creepage distance standard DIP-6 7 mm Clearance distance standard DIP-6 7 mm Creepage distance 400 mil DIP-6 8 mm Clearance distance 400 mil DIP-6 8 mm Insulation thickness, reinforced rated per IEC 60950 2.10.5.1 0.4 mm Note • As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 103 103 5 (TA = - 25 ˚C, VCE = 5.0 V) IC/IF = f (IF) 5 IC (%) IF IC (%) IF 4 VCE = 5.0 V) 4 3 2 102 DC Pulsbetrieb Pulse 3 IC/IF = f (IF) 2 102 1 1 5 5 100 10-1 100 10-1 5 5 100 Fig. 3 - Current Transfer Ratio vs. Diode Current 103 103 DC (TA = 0 °C, VCE = 5.0 V) Pulsmode IC/IF = f (IF) Pulse 4 3 1 5 100 10-1 isfh601_04 5 100 5 101 5 DC Pulsbetrieb Pulse TA = 50 °C, VCE = 5.0 V) IC/IF = f (IF) 4 3 2 102 2 102 2 IF (mA) Fig. 4 - Current Transfer Ratio vs. Diode Current 101 2 Fig. 5 - Current Transfer Ratio vs. Diode Current IC (%) IF IC (%) IF 5 5 IF (mA) isfh601_05 IF (mA) isfh601_03 100 5 2 101 1 5 100 10-1 isfh601_06 5 100 5 101 2 IF (mA) Fig. 6 - Current Transfer Ratio vs. Diode Current Document Number: 83663 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.5, 19-Aug-13 Alternative Device Available, Use CNY17 SFH601 www.vishay.com 103 5 DC Pulsbetrieb Pulse Vishay Semiconductors 30 TA = 75 °C, VCE = 5.0 V) DC Pulsbetrieb Pulse IC/IF = f (IF) IF = ± 14 mA IF = ± 12 mA (%) 4 2 1 5 IF = ± 10 mA 20 Ic (mA) IC IF 3 102 IC = f (VCE) IF = ± 8 mA IF = ± 6 mA 10 IF = ± 4 mA IF = ± 1 mA 100 10-1 100 5 isfh601_07 0 101 2 5 IF (mA) 10 15 1.2 25° 50° 75° 4 1.1 3 2 102 VF (V) IC (%) IF VCE Fig. 10 - Output Characteristics DC Pulsbetrieb Pulse 5 5 isfh601_10 Fig. 7 - Current Transfer Ratio vs. Diode Current 103 0 IF = ± 2 mA 1 5 1.0 (IF = 10 mA, VCE = 5.0 V) IC/IF = f (T) 101 - 25 0.9 0 25 50 Fig. 8 - Current Transfer Ratio vs. Diode Current 30 VCE = 40 V IB = 10 µA IB = 5 µA IB = 2 µA 0 isfh601_09 5 VCE 10 Fig. 9 - Transistor Characteristics 15 ICEO (µA) IC (mA) IC = f (VCE) VCE = 10 V 10-1 IB = 30 µA (IF = 0) 0 ICEO = f (V, T) (IF = 0) IB = 40 µA IB = 20 µA 102 Fig. 11 - Forward Voltage 5 20 101 IF (mA) 100 DC Pulsbetrieb Pulse 10 100 isfh601_11 TA(°C) isfh601_08 10- 1 °C 75 5 10-2 5 10-3 - 25 isfh601_12 0 25 50 TA (°C) 75 100 Fig. 12 - Collector Emitter Off-state Current Document Number: 83663 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.5, 19-Aug-13 Alternative Device Available, Use CNY17 SFH601 www.vishay.com Vishay Semiconductors 1.0 1.0 VCEsat = f (IC) 0.9 0.8 0.7 VCEsat (V) VCEsat = f (IC) 0.8 IF = 3 x IC 0.7 0.6 VCE sat (V) 0.6 0.5 0.4 0.3 0.4 0.3 0.2 0.2 0.1 0 0.1 100 101 0 102 IC (mA) isfh601_13 IF = IC 0.5 IF = 2 x IC IF = 3 x IC 100 isfh601_16 Fig. 13 - Saturation Voltage vs. Collector Current and Modulation Depth SFH601-1 104 VCEsat = f (IC) 0.8 IF (mA) VCEsat (V) 0.7 0.6 0.5 IF = 2 x IC 0.4 103 D=0 0.005 0.01 0.02 0.05 0.1 D= tp T tp IF T 102 0.3 IF = 3 x IC 0.2 0.2 0.5 DC 0.1 10 0 100 isfh601_14 101 10- 5 102 10- 4 10- 3 10- 2 10- 1 100 101 tp (s) isfh601_17 IC (mA) D = parameter, IF = f(tp) 1 Fig. 17 - Permissible Pulse Load Fig. 14 - Saturation Voltage vs. Collector Current and Modulation Depth SFH601-2 1.0 200 Ptot = f (TA) VCEsat = f (IC) 0.8 IF = IC 150 Ptot (mW) 0.7 VCE sat (V) 102 5 Fig. 16 - Saturation Voltage vs. Collector Current and Modulation Depth SFH601-4 1.0 0.9 5 101 IC (mA) 0.6 0.5 0.4 0.3 IF = 2 x IC 0.2 IF = 3 x IC Transistor 100 Diode 50 0.1 0 100 isfh601_15 5 101 IC (mA) 5 102 Fig. 15 - Saturation Voltage vs. Collector Current and Modulation Depth SFH601-3 0 0 isfh601_18 25 50 75 100 TA (°C) Fig. 18 - Permissible Power Dissipation for Transistor and Diode Document Number: 83663 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.5, 19-Aug-13 Alternative Device Available, Use CNY17 SFH601 www.vishay.com Vishay Semiconductors 120 IF = f (TA) IF (mA) 90 60 30 0 0 25 50 75 100 TA (°C) isfh601_19 Fig. 19 - Permissible Forward Current Diode PACKAGE DIMENSIONS in inches (millimeters) 3 2 1 4 5 6 Pin one ID 6.4 ± 0.1 ISO method A 8.6 ± 0.1 7.62 typ. 1.2 ± 0.1 1 min. 3.555 ± 0.255 18° 4° typ. 2.95 ± 0.5 0.8 min. 0.85 ± 0.05 0.5 ± 0.05 0.25 typ. 3° to 9° 7.62 to 8.81 i178004 2.54 typ. Option 6 Option 7 Option 9 10.36 9.96 7.62 typ. 9.53 10.03 7.8 7.4 7.62 ref. 0.7 4.6 4.1 0.102 0.249 0.30 typ. 8 min. 0.51 1.02 0.35 0.25 8.4 min. 10.16 10.92 10.3 max. 0.76 0.76 2.54 R0.25 2.54 R0.25 1.78 1.78 18450-16 15° max. 8 min. 8 min. 11.05 1.52 8 min. 11.05 1.52 Document Number: 83663 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.5, 19-Aug-13 DIP-6A www.vishay.com Vishay Semiconductors DIP-6A PACKAGE DIMENSIONS in inches (millimeters) 3 2 1 4 5 6 Pin one ID 6.4 ± 0.1 ISO method A 8.6 ± 0.1 1 min. 7.62 typ. 1.2 ± 0.1 3.555 ± 0.255 18° 4° typ. 2.95 ± 0.5 0.8 min. 0.85 ± 0.05 0.5 ± 0.05 3° to 9° 0.25 typ. 7.62 to 8.81 i178004 2.54 typ. Note The information in this document provides generic information but for specific information on a product the appropriate product datasheet should be used. Rev. 1.2, 24-Aug-15 Document Number: 83263 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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