CNY17F Datasheet

CNY17F
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Vishay Semiconductors
Optocoupler, Phototransistor Output, no Base Connection
FEATURES
• Isolation test voltage, 5000 VRMS
A
1
6 NC
C
2
5 C
NC
3
4 E
• No base terminal connection for improved
common mode interface immunity
• Long term stability
• Industry standard dual-in-line package
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
AGENCY APPROVALS
Safety application model number covering all products in
this datasheet is CNY17F. This model number should be
used when consulting safety agency documents.
i179004-14
• UL file no. E52744
DESCRIPTION
• cUL tested to CSA 22.2 bulletin 5A
The CNY17F is an optocoupler consisting of a gallium
arsenide infrared emitting diode optically coupled to a
silicon planar phototransistor detector in a plastic plug-in
DIP-6 package.
• DIN EN 60747-5-5 (VDE 0884-5), available with option 1
• BSI: EN 60065, EN 60950-1
• FIMKO EN60950
The coupling device is suitable for signal transmission
between two electrically separated circuits. The potential
difference between the circuits to be coupled is not allowed
to exceed the maximum permissible reference voltages.
• CQC GB8898-2011
In contrast to the CNY17 series, the base terminal of the
F type is not conected, resulting in a substantially improved
common-mode interference immunity.
ORDERING INFORMATION
C
N
Y
1
7
F
-
#
PART NUMBER
CTR
BIN
X
0
DIP-6
DIP-6, 400 mil, option 6
SMD-6, option 7
SMD-6, option 9
VDE, UL, cUL, BSI, FIMKO
DIP-6
DIP-6, 400 mil, option 6
#
PACKAGE OPTION
AGENCY CERTIFIED/PACKAGE
UL, cUL, BSI, FIMKO
#
T
TAPE
AND
REEL
DIP-6
Option 6
7.62 mm
10.16 mm
Option 7
Option 9
> 8 mm
8 mm typ.
CTR (%)
40 to 80
63 to 125
100 to 200
160 to 320
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
CNY17F-1X006
CNY17F-2X006
CNY17F-3X006
CNY17F-4X006
CNY17F-1X007 (1)
CNY17F-1X009T
(1)
CNY17F-2X007T (1)
CNY17F-3X007T (1)
CNY17F-4X007T (1)
(1)
(1)
CNY17F-4X009T (1)
CNY17F-2X009T
CNY17F-3X009T
40 to 80
63 to 125
100 to 200
160 to 320
CNY17F-1X001
CNY17F-2X001
CNY17F-3X001
CNY17F-4X001
CNY17F-1X016
CNY17F-2X016
CNY17F-3X016
CNY17F-4X016
SMD-6, option 7
CNY17F-1X017 (1)
CNY17F-2X017 (1)
CNY17F-3X017 (1)
CNY17F-4X017 (1)
SMD-6, option 9
CNY17F-1X019
CNY17F-2X019 (1)
CNY17F-3X019 (1)
-
Notes
• Additional options may be possible, please contact sales office.
(1) Also available in tubes; do not put T on end.
Document Number: 83607
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Rev. 2.2, 08-Jan-14
CNY17F
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Collector current
Collector peak current
Output power dissipation
COUPLER
Isolation test voltage between emitter and
detector
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature (1)
Total power dissipation
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
IF
IFSM
Pdiss
6
60
2.5
100
V
mA
A
mW
BVCEO
IC
ICM
Pdiss
70
50
100
150
V
mA
mA
mW
VISO
5000
VRMS
Tstg
Tamb
Tj
Tsld
Pdiss
-55 to +150
-55 to +110
100
260
250
°C
°C
°C
°C
mW
t ≤ 10 μs
tp/T = 0.5, tp ≤ 10 ms
t = 1 min
2 mm from case, ≤ 10 s
Ptot - Total Power Dissipation (mW)
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted parts (SMD). Refer to wave profile for soldering conditions for through
hole parts (DIP).
300
Coupled device
250
200
Phototransistor
150
100
IR-diode
50
0
0
20
40
60
80
100
120
Tamb - Ambient Temperature (°C)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
OUTPUT
Collector emitter capacitance
Base collector capacitance
Emitter base capacitance
TEST CONDITION
PART
SYMBOL
IF = 60 mA
IR = 10 μA
VR = 6 V
VR = 0 V, f = 1 MHz
VF
VBR
IR
CO
VCE = 5 V, f = 1 MHz
VCE = 5 V, f = 1 MHz
VCE = 5 V, f = 1 MHz
CCE
CBC
CEB
MIN.
TYP.
MAX.
UNIT
1.39
1.65
0.01
25
10
V
V
μA
pF
6
5.2
6.5
7.5
pF
pF
pF
Document Number: 83607
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Rev. 2.2, 08-Jan-14
CNY17F
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ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
COUPLER
Collector emitter, saturation voltage
Coupling capacitance
Collector emitter, leakage current
TEST CONDITION
PART
SYMBOL
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
VCEsat
CC
ICEO
ICEO
ICEO
ICEO
IF = 10 mA, IC = 2.5 mA
VCE = 10 V
MIN.
TYP.
MAX.
UNIT
0.25
0.6
2
2
5
5
0.4
V
pF
nA
nA
nA
nA
50
50
100
100
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
IF = 10 mA
IC/IF
IF = 1 mA
PART
SYMBOL
MIN.
MAX.
UNIT
CNY17F-1
CTR
40
TYP.
80
%
CNY17F-2
CTR
63
125
%
CNY17F-3
CTR
100
200
%
CNY17F-4
CTR
160
CNY17F-1
CTR
13
30
%
CNY17F-2
CTR
22
45
%
CNY17F-3
CTR
34
70
%
CNY17F-4
CTR
56
90
%
320
%
Note
• Current transfer ratio IC/IF at VCE = 5 V, 25 °C and collector emitter leakage current by dash number.
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
LINEAR OPERATION (without saturation)
IF = 10 mA, VCC = 5 V,
Turn-on time
RL = 75 Ω
IF = 10 mA, VCC = 5 V,
Rise time
RL = 75 Ω
IF = 10 mA, VCC = 5 V,
Turn-off time
RL = 75 Ω
IF = 10 mA, VCC = 5 V,
Fall time
RL = 75 Ω
IF = 10 mA, VCC = 5 V,
Cut-off frequency
RL = 75 Ω
SWITCHING OPERATION (with saturation)
IF = 20 mA
Turn-on time
IF = 10 mA
IF = 5 mA
IF = 20 mA
Rise time
IF = 10 mA
IF = 5 mA
IF = 20 mA
Turn-off time
IF = 10 mA
IF = 5 mA
IF = 20 mA
Fall time
IF = 10 mA
IF = 5 mA
PART
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
SYMBOL
MIN.
TYP.
MAX.
UNIT
ton
3
μs
tr
2
μs
toff
2.3
μs
tf
2
μs
fCO
110
kHz
ton
ton
ton
ton
tr
tr
tr
tr
toff
toff
toff
toff
tf
tf
tf
tf
3
4.2
4.2
6
2
3
3
4.6
18
23
23
25
11
14
14
15
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
Document Number: 83607
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Rev. 2.2, 08-Jan-14
CNY17F
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IF
Vishay Semiconductors
+5V
IF
IF
0
0
tp
IC
R G = 50 Ω
tp
= 0.01
T
t
100 %
90 %
t p = 50 µs
Channel I
Oscilloscope
R L = 1 MΩ
C L = 20 pF
Channel II
50 Ω
10 %
0
tr
RL
td
ts
t on
95 10804-3
Fig. 2 - Test Circuit, Non-Saturated Operation
IF
+5V
I F = 10 mA
0
tp
td
tr
t on (= td + tr)
tf
t off
ts
tf
t off (= ts + tf)
Pulse duration
Delay time
Rise time
Turn-on time
t
Storage time
Fall time
Turn-off time
96 11698
Fig. 4 - Switching Times
IC
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Channel II
50 Ω
Oscilloscope
R L ≥ 1 MΩ
C L ≤ 20 pF
1 kΩ
95 10843
Fig. 3 - Test Circuit, Saturated Operation
SAFETY AND INSULATION RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Output safety power
PSO
700
mW
Input safety current
ISI
400
mA
Safety temperature
TSI
175
°C
Comparative tracking index
CTI
175
MAXIMUM SAFETY RATINGS
INSULATION RATED PARAMETERS
Maximum withstanding isolation voltage
VISO
5000
Maximum transient isolation voltage
VIOTM
8000
Vpeak
Maximum repetitive peak isolation voltage
VIORM
890
Vpeak
VRMS
Insulation resistance
Tamb = 25 °C, VDC = 500 V
RIO
≥ 1012
Ω
Isolation resistance
Tamb = 100 °C, VDC = 500 V
RIO
≥ 1011
Ω
Climatic classification (according to IEC 68 part 1)
55/115/21
Environment (pollution degree in accordance to DIN VDE 0109)
Creepage distance
Clearance distance
Insulation thickness
2
≥7
Standard DIP-4
mm
SMD
≥7
mm
Standard DIP-4
≥8
mm
SMD
DTI
≥8
mm
≥ 0.4
mm
Note
• As per DIN EN 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of protective circuits.
Document Number: 83607
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.2, 08-Jan-14
CNY17F
www.vishay.com
Vishay Semiconductors
1.8
1.7
Tamb = 0 °C
1.6
Tamb = - 25 °C
1.5
1.4
Tamb = - 40 °C
1.3 T = - 55 °C
amb
1.2
1.1
Tamb = 25 °C
1.0
Tamb = 50 °C
0.9
Tamb = 75 °C
0.8
Tamb = 100 °C
0.7 Tamb = 110 °C
0.6
0.1
1
10
100
10 000
IF = 0 mA
ICE0 - Leakage Current (nA)
VF - Forward Voltage (V)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
VCE = 40 V
100
1
VCE = 12 V
0.1
0.01
0.001
- 60 - 40 - 20
0
20
40
60
80 100
IF - Forward Current (mA)
Tamb - Ambient Temperature (°C)
Fig. 5 - Forward Voltage vs. Forward Current
Fig. 8 - Leakage Current vs. Ambient Temperature
60
1.2
CTRNorm - Normalized CTR (NS)
IC - Collector Current (mA)
VCE = 24 V
10
IF = 30 mA
50
40
IF = 20 mA
30
IF = 15 mA
20
IF = 10 mA
10
IF = 5 mA
0
0
1
2
3
4
5
7
6
0.8
0.6
0.4
0.2
0
-60 -40 -20
8
VCE = 5 V
IF = 10 mA
1.0
0
20
40
60
80 100 120
VCE - Collector Emitter Voltage (NS) (V)
Tamb - Ambient Temperature (°C)
Fig. 6 - Collector Current vs. Collector Emitter Voltage (NS)
Fig. 9 - Normalized CTR (NS) vs. Ambient Temperature
25
IC - Collector Current (mA)
20
15
IF = 10 mA
10
IF = 5 mA
5
IF = 1 mA
IF = 2 mA
0
0.1
0
0.2
0.3
0.4
CTRNorm - Normalized CTR (sat)
1.2
IF = 25 mA
VCE = 0.4 V
IF = 10 mA
1.0
0.8
0.6
0.4
0.2
0
-60 -40 -20
0
20
40
60
80 100 120
VCE - Collector Emitter Voltage (sat) (V)
Tamb - Ambient Temperature (°C)
Fig. 7 - Collector Current vs. Collector Emitter Voltage (sat)
Fig. 10 - Normalized CTR (sat) vs. Ambient Temperature
Document Number: 83607
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Rev. 2.2, 08-Jan-14
CNY17F
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1000
1.2
IF = 10 mA
VCE = 5 V
VCC = 5 V
fCTR - CTR Frequency (kHz)
CTRNorm - Normalized CTR (NS)
Vishay Semiconductors
Tamb = 25 °C
1.0
Tamb = 0 °C
0.8
Tamb = - 40 °C
Tamb = - 55 °C
0.6
Tamb = 50 °C
Tamb = 75 °C
0.4
Tamb = 100 °C
0.2
100
10
Tamb = 110 °C
0
0.1
1
1
0.1
100
10
1
10
100
IF - Forward Current (mA)
IC - Collector Current (mA)
Fig. 11 - Normalized CTR (NS) vs. Forward Current
Fig. 14 - CTR -3 dB Frequency vs. Collector Current
1000
IF = 10 mA
VCE = 0.4 V
VCE = 5 V, IF = 10 mA
ton, toff - Switching Time (μs)
CTRNorm - Normalized CTR (sat)
1.2
Tamb = 25 °C
1.0
Tamb = 0 °C
Tamb = - 40 °C
0.8
Tamb = - 55 °C
0.6
Tamb = 50 °C
0.4
Tamb = 75 °C
Tamb = 100 °C
0.2
toff
100
10
ton
1
Tamb = 110 °C
0
0.1
1
10
100
0.1
0.1
1
10
100
IF - Forward Current (mA)
RL - Load Resistance (kΩ)
Fig. 12 - Normalized CTR (sat) vs. Forward Current
Fig. 15 - Switching Time vs. Load Resistance
0
VCE = 5 V
- 20
Phase (deg)
- 40
- 60
- 80
- 100
- 120
- 140
- 160
1
10
100
1000
f - Frequency (kHz)
Fig. 13 - CTR Frequency vs. Phase Angle
Document Number: 83607
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Rev. 2.2, 08-Jan-14
CNY17F
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Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
6
5
4
6.5 ± 0.5
1
2
3
7.3 ± 0.5
7.62 ± 0.3
1.1 ± 0.1
3.5 ± 0.3
0.5 typ.
3.3 ± 0.5
2.8 ± 0.5
0.26
0.5 ± 0.1
2.54 ± 0.25
7.62 to 9.98
22530
Option 6
Option 7
7.62 typ.
7.62 typ.
3.5 ± 0.3
7.62 typ.
3.5 ± 0.3
0.35 ± 0.25
0.1 min.
Option 9
0.6 min.
8 min.
2.7 min.
10.16 typ.
0.1 ± 0.1
0.6 min.
3.5 ± 0.3
8.16 ± 0.8
10.16 ± 0.3
10.3 max.
0.76
R 0.25
2.54
0.76
2.54
R 0.25
1.78
8 min.
11.05
20802-34
1.52
1.78
8 min.
11.05
1.52
PACKAGE MARKING (Example of CNY17F-2x017T)
CNY17F-2
Pin 1 I.D.
V YWW 25
Notes
• VDE logo is only marked on option 1 parts. Option information is not marked on the part.
• Tape and reel suffix (T) is not part of the package marking.
Document Number: 83607
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Vishay Semiconductors
TUBE AND TAPE INFORMATION
DEVICES PER TUBE
TYPE
UNITS/TUBE
TUBES/BOX
UNITS/BOX
DIP-6
50
40
2000
Ø 1.55 ± 0.05
2 ± 0.1
4 ± 0.1
1.75 ± 0.1
7.5 ± 0.1
16 ± 0.3
12 ± 0.1
0.3 ± 0.05
22537-1
Fig. 16 - Tape and Reel Drawing, 1000 Units per Reel
Document Number: 83607
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Rev. 2.2, 08-Jan-14
Legal Disclaimer Notice
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Disclaimer
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000
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