Data Sheet

PBLS1503Y; PBLS1503V
15 V PNP BISS loadswitch
Rev. 03 — 24 August 2009
Product data sheet
1. Product profile
1.1 General description
Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package.
Table 1.
Product overview
Type number
Package
NXP
JEITA
PBLS1503Y
SOT363
SC-88
PBLS1503V
SOT666
-
1.2 Features
n
n
n
n
n
Low VCEsat (BISS) and resistor-equipped transistor in one package
Low ‘threshold’ voltage (< 1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
1.3 Applications
n
n
n
n
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
open base
-
-
−15
V
-
-
−500
mA
IC = −500 mA;
IB = −50 mA
-
300
500
mΩ
open base
-
-
50
V
TR1; PNP; low VCEsat transistor
VCEO
collector-emitter voltage
IC
collector current (DC)
RCEsat
equivalent on-resistance
TR2; NPN; resistor-equipped transistor
VCEO
collector-emitter voltage
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
Table 2.
Quick reference data …continued
Symbol
Parameter
Min
Typ
Max
Unit
IO
output current (DC)
Conditions
-
-
100
mA
R1
bias resistor 1 (input)
7
10
13
kΩ
R2/R1
bias resistor ratio
0.8
1
1.2
2. Pinning information
Table 3.
Discrete pinning
Pin
Description
1
emitter TR1
Simplified outline
2
base TR1
3
output (collector) TR2
4
GND (emitter) TR2
5
input (base) TR2
6
collector TR1
6
5
Symbol
4
6
5
R1
4
R2
TR2
1
2
3
TR1
001aab555
1
2
3
sym036
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
PBLS1503Y
SC-88
plastic surface mounted package; 6 leads
SOT363
PBLS1503V
-
plastic surface mounted package; 6 leads
SOT666
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
PBLS1503Y
*C3
PBLS1503V
C3
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PBLS1503Y_PBLS1503V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 24 August 2009
2 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Transistor TR1: PNP
VCBO
collector-base voltage
open emitter
-
−15
V
VCEO
collector-emitter voltage
open base
-
−15
V
VEBO
emitter-base voltage
open collector
-
−6
V
IC
collector current (DC)
-
−500
mA
-
−1
A
-
−50
mA
-
−100
mA
-
200
mW
tp ≤ 1 ms; δ ≤ 0.02
ICM
peak collector current
IB
base current (DC)
IBM
peak base current
tp ≤ 1 ms; δ ≤ 0.02
total power dissipation
Tamb ≤ 25 °C
Ptot
[1]
Transistor TR2: NPN
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage
open base
-
50
V
VEBO
emitter-base voltage
open collector
-
10
V
VI
input voltage
-
positive
-
+40
V
negative
-
−10
V
-
100
mA
IO
output current (DC)
ICM
peak collector current
Ptot
total power dissipation
Tamb ≤ 25 °C
Ptot
total power dissipation
Tamb ≤ 25 °C
Tstg
Tj
Tamb
-
100
mA
-
200
mW
-
300
mW
storage temperature
−65
+150
°C
junction temperature
-
150
°C
ambient temperature
−65
+150
°C
[1]
Per device
[1]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
Table 7.
Symbol
Thermal characteristics
Parameter
Conditions
thermal resistance from
junction to ambient
in free air
Min
Typ
Max
Unit
Per device
Rth(j-a)
SOT363
[1]
-
-
416
K/W
SOT666
[1][2]
-
-
416
K/W
[1]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
PBLS1503Y_PBLS1503V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 24 August 2009
3 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Transistor TR1: PNP
ICBO
collector-base cut-off
current
VCB = −15 V; IE = 0 A
-
-
−100
nA
VCB = −15 V; IE = 0 A; Tj = 150 °C
-
-
−50
µA
ICES
collector-emitter
cut-off current
VCE = −15 V; VBE = 0 V
-
-
−100
nA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−100
nA
hFE
DC current gain
VCE = −2 V; IC = −10 mA
200
-
-
150
-
-
VCEsat
collector-emitter
saturation voltage
VCE = −2 V; IC = −100 mA
[1]
VCE = −2 V; IC = −500 mA
[1]
IC = −10 mA; IB = −0.5 mA
IC = −200 mA; IB = −10 mA
90
-
-
-
-
−25
mV
-
-
−150
mV
IC = −500 mA; IB = −50 mA
[1]
-
-
−250
mV
-
300
500
mΩ
RCEsat
equivalent
on-resistance
IC = −500 mA; IB = −50 mA
[1]
VBEsat
base-emitter
saturation voltage
IC = −500 mA; IB = −50 mA
[1]
-
-
−1.1
V
VBEon
base-emitter turn-on
voltage
VCE = −2 V; IC = −100 mA
[1]
-
-
−0.9
V
fT
transition frequency
VCE = −5 V; IC = −100 mA;
f = 100 MHz
100
280
-
MHz
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
-
-
10
pF
Transistor TR2: NPN
ICBO
collector-base cut-off
current
VCB = 50 V; IE = 0 A
-
-
100
nA
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
-
-
1
µA
VCE = 30 V; IB = 0 A; Tj = 150 °C
-
-
50
µA
µA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
400
hFE
DC current gain
VCE = 5 V; IC = 5 mA
30
-
-
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
-
150
mV
VI(off)
off-state input voltage
VCE = 5 V; IC = 100 µA
-
1.1
0.8
V
VI(on)
on-state input voltage
VCE = 0.3 V; IC = 10 mA
2.5
1.8
-
V
R1
bias resistor 1 (input)
7
10
13
kΩ
R2/R1
bias resistor ratio
0.8
1
1.2
Cc
collector capacitance
-
-
2.5
[1]
VCB = 10 V; IE = ie = 0 A; f = 1 MHz
pF
Pulse test: tp ≤ 300 µs; δ ≤ 0.02
PBLS1503Y_PBLS1503V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 24 August 2009
4 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
001aaa181
600
hFE
001aaa185
−103
VCEsat
(mV)
(1)
(1)
−102
400
(2)
(3)
(2)
−10
200
(3)
0
−10−1
−1
−10
−102
−1
−10−1
−103
−1
−10
−102
IC (mA)
VCE = −2 V
IC/IB = 20
(1) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = −55 °C
Fig 1.
−103
IC (mA)
TR1(PNP): DC current gain as a function of
collector current; typical values
001aaa183
−1100
VBE
(mV)
−900
Fig 2.
TR1(PNP): Collector-emitter saturation voltage
as a function of collector current; typical
values
001aaa184
−1200
VBEsat
(mV)
−1000
(1)
−700
(1)
−800
(2)
(2)
−500
−600
(3)
(3)
−300
−400
−100
−10−1
−1
−10
−102
−103
−200
−10−1
−1
VCE = −2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(3) Tamb = −55 °C
TR1(PNP): Base-emitter voltage as a function
of collector current; typical values
Fig 4.
−103
TR1(PNP): Base-emitter saturation voltage as
a function of collector current; typical values
PBLS1503Y_PBLS1503V_3
Product data sheet
−102
IC/IB = 20
(1) Tamb = −55 °C
Fig 3.
−10
IC (mA)
IC (mA)
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 24 August 2009
5 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
001aaa182
−1200
RCEsat
(Ω)
(1)
(2)
(3)
IC
(mA)
001aaa186
103
102
(4)
(5)
−800
(6)
(7)
10
(8)
−400
(9)
(1)
1
(10)
0
0
−2
−4
−6
(2)
(3)
−8
−10
VCE (V)
10−1
−10−1
−1
−10
−102
−103
IC (mA)
Tamb = 25 °C
IC/IB = 20
(1) IB = − 7.0 mA
(1) Tamb = −55 °C
(2) IB = − 6.3 mA
(2) Tamb = 25 °C
(3) IB = − 5.6 mA
(3) Tamb = 150 °C
(4) IB = − 4.9 mA
(5) IB = − 4.2 mA
(6) IB = − 3.5 mA
(7) IB = − 2.8 mA
(8) IB = − 2.1 mA
(9) IB = − 1.4 mA
(10) IB = − 0.7 mA
Fig 5.
TR1(PNP): Collector current as a function of
collector-emitter voltage; typical values
Fig 6.
TR1(PNP): Equivalent on-resistance as a
function of collector current; typical values
PBLS1503Y_PBLS1503V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 24 August 2009
6 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
006aaa004
−1
006aaa005
103
RCEsat
(Ω)
VCEsat
(V)
102
−10−1
(1)
(1)
10
(2)
(2)
(3)
−10−2
1
(3)
−10−3
−10−1
−1
−10
−102
−103
10−1
−10−1
−1
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(2) IC/IB = 50
(3) IC/IB = 10
(3) IC/IB = 10
TR1(PNP): Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 8.
−103
TR1(PNP): Equivalent-on resistance as a
function of collector current; typical values
PBLS1503Y_PBLS1503V_3
Product data sheet
−102
Tamb = 25 °C
(1) IC/IB = 100
Fig 7.
−10
IC (mA)
IC (mA)
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 24 August 2009
7 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
006aaa034
103
(1)
(2)
(3)
hFE
006aaa035
1
VCEsat
(V)
102
(1)
(2)
(3)
10−1
10
1
10−1
1
102
10
10−2
1
IC (mA)
VCE = 5 V
IC/IB = 20
(1) Tamb = 150 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(3) Tamb = −40 °C
Fig 9.
102
10
IC (mA)
TR2(NPN): DC current gain as a function of
collector current; typical values
006aaa036
10
Fig 10. TR2(NPN): Collector-emitter saturation voltage
as a function of collector current; typical
values
006aaa037
10
VI(off)
(V)
VI(on)
(V)
(1)
(2)
(1)
(3)
1
(2)
1
(3)
10−1
10−1
1
102
10
10−1
10−2
10−1
IC (mA)
10
IC (mA)
VCE = 0.3 V
VCE = 5 V
(1) Tamb = −40 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig 11. TR2(NPN): On-state input voltage as a function
of collector current; typical values
Fig 12. TR2(NPN): Off-state input voltage as a function
of collector current; typical values
PBLS1503Y_PBLS1503V_3
Product data sheet
1
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 24 August 2009
8 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
8. Package outline
Plastic surface-mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
5
v M A
4
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT363
JEITA
SC-88
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
Fig 13. Package outline SOT363 (SC-88)
PBLS1503Y_PBLS1503V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 24 August 2009
9 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
Plastic surface-mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
SOT666
Fig 14. Package outline SOT666
PBLS1503Y_PBLS1503V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 24 August 2009
10 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PBLS1503Y
PBLS1503V
Package
SOT363
SOT666
Description
Packing quantity
3000
4000
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-
−135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-
-165
-
-115
-
4 mm pitch, 8 mm tape and reel
[1]
For further information and the availability of packing methods, see Section 12.
[2]
T1: normal taping
[3]
T2: reverse taping
PBLS1503Y_PBLS1503V_3
Product data sheet
10000
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 24 August 2009
11 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
10. Revision history
Table 10.
Revision history
Document ID
Release date
PBLS1503Y_PBLS1503V_3 20090824
Modifications:
Data sheet status
Change notice
Supersedes
Product data sheet
-
PBLS1503Y_PBLS1503V_2
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
•
•
Table 3 “Discrete pinning”: amended
Figure 13 “Package outline SOT363 (SC-88)”: updated
Figure 14 “Package outline SOT666”: updated
PBLS1503Y_PBLS1503V_2 20041125
Product data sheet
-
PBLS1503V_1
PBLS1503V_1
Product specification
-
-
20031107
PBLS1503Y_PBLS1503V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 24 August 2009
12 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PBLS1503Y_PBLS1503V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 24 August 2009
13 of 14
NXP Semiconductors
PBLS1503Y; PBLS1503V
15 V PNP BISS loadswitch
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 August 2009
Document identifier: PBLS1503Y_PBLS1503V_3
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