ES3A, ES3B, ES3C, ES3D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated pallet chip junction • Ideal for automated placement • Ultrafast recovery times for high efficiency • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified DO-214AB (SMC) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 50 V, 100 V, 150 V, 200 V IFSM 100 A trr 20 ns VF 0.90 V TJ max. 150 °C Package DO-214AB (SMC) Diode variations Single die MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code ES3A ES3B ES3C ES3D UNIT EA EB EC ED 100 150 200 V Maximum repetitive peak reverse voltage VRRM 50 Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current at TL = 100 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A TJ, TSTG -55 to +150 °C Operating junction and storage temperature range Revision: 19-Feb-15 Document Number: 88589 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ES3A, ES3B, ES3C, ES3D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage SYMBOL ES3B VF (1) 3.0 A TA = 25 °C Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time ES3A TA = 100 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Maximum reverse recovery time IF = 3.0 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM Maximum stored charge IF = 3.0 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM Typical junction capacitance 4.0 V, 1 MHz TJ = 100 °C TJ = 25 °C TJ = 100 °C ES3D 0.90 µA 500 20 ns 30 trr ns 50 15 Qrr nC 35 CJ UNIT V 10 IR trr TJ = 25 °C ES3C 45 pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance ES3A ES3B ES3C RJA (1) 47 RJL (1) 12 ES3D UNIT °C/W Note (1) Units mounted on PCB with 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pad areas ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ES3D-E3/57T 0.211 57T 850 7" diameter plastic tape and reel ES3D-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel ES3DHE3_A/H (1) 0.211 H 850 7" diameter plastic tape and reel 0.211 I 3500 13" diameter plastic tape and reel PREFERRED P/N ES3DHE3_A/I (1) Note (1) AEC-Q101 qualified Revision: 19-Feb-15 Document Number: 88589 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ES3A, ES3B, ES3C, ES3D www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 Instantaneous Reverse Leakage Current (µA) Average Forward Rectified Current (A) 3.0 2.0 1.0 Resistive or Inductive Load P.C.B. Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) Copper Pad Areas 0 90 100 110 120 130 140 TJ = 100 °C 100 10 1 150 TJ = 25 °C 0 20 40 60 80 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 150 50 8.3 ms Single Half Sine-Wave at TL = 100 °C 125 Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 125 °C 1000 0.1 80 100 75 50 25 0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 40 30 20 10 0 1 10 100 0.1 Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current 100 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 25 °C 0.01 0.1 0.3 0.5 0.7 0.9 1 10 100 Reverse Voltage (V) Number of Cycles at 60 Hz Instantaneous Forward Current (A) TJ = 150 °C 1.1 1.3 Instantaneous Forward Voltage (V) Fig. 5 - Typical Junction Capacitance Fig. 3 - Typical Instantaneous Forward Characteristics Revision: 19-Feb-15 Document Number: 88589 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ES3A, ES3B, ES3C, ES3D www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 19-Feb-15 Document Number: 88589 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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