Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT25N15H
Preliminary
POWER MOSFET
25A, 150V N-CHANNEL
ENHANCEMENT MODE
TRENCH POWER MOSFET

DESCRIPTION
The UTC UTT25N15H is N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with super low gate charge and fast switching performance. The
UTC UTT25N15H is suitable for high efficiency synchronous
rectification in SMPS, primary side switch and high frequency
circuits.

FEATURES
* Low Gate Charge
* High Switching Speed
* RDS(ON) < 52mΩ @ VGS=10V, ID=5A
* High Cell Density Trench Technology

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT25N15HL-TM3-T
UTT25N15HG-TM3-T
UTT25N15HL-TN3-R
UTT25N15HG-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
UTT25N15HL-TM3-T
Package
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
(1)Packing Type
(1) T: Tube, R: Tape Reel
(2)Package Type
(2) TM3: TO-251, TN3: TO-252
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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UTT25N15H

Preliminary
Power MOSFET
MARKING
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATING (TA =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
VDSS
150
V
VGSS
±20
V
Continuous
ID
25
A
Drain Current (TC=25°C)
50
A
Pulsed (Note 2)
IDM
Avalanche Energy (Note 3)
Single Pulsed (Note 3)
EAS
37
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
7.3
V/nS
Power Dissipation
TC=25°C
PD
50
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 0.1mH, IAS = 27.2A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
4. ISD ≤ 25A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
Drain-Source Voltage
Gate-Source Voltage

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case

Steady state
Steady state
SYMBOL
θJA
θJC
RATINGS
110
2.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Static Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=150V, VGS=0V,TJ=25°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
150
VDS=VGS, ID=250µA
VGS=10V, ID=5A
VGS=6V, ID=5A
2.0
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VGS=0V, VDS=0V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge(Note 1)
QG
VDS=50V, VGS=10V, ID=1.3A,
Gate to Source Charge
QGS
IG=100μA (Note 1,2)
Gate to Drain Charge
QGD
Turn-on Delay Time(Note 1)
tD(ON)
VDD =30V, VGS=10V, ID =0.5A,
Rise Time
tR
RG =25Ω (Note 1,2)
Turn-off Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=25A, VGS=0V
(Note 1)
Reverse Recovery Time (Note 1)
trr
IS=25A, VGS=0V, dI/dt=100A/μs
Reverse Recovery Charge
Qrr
Notes: 1. Pulse test: pulse width ≤ 300us, duty cycle ≤ 2%, Starting TJ=25°C.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
1
+100
-100
V
µA
nA
nA
4.0
52
60
V
mΩ
mΩ
3.0
pF
pF
pF
Ω
2920
193
78
63
14
10
122
70
330
87
76
225
nC
nC
nC
ns
ns
ns
ns
25
50
A
A
1.5
V
nS
nC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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