UNISONIC TECHNOLOGIES CO., LTD UTT25N15H Preliminary POWER MOSFET 25A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT25N15H is N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with super low gate charge and fast switching performance. The UTC UTT25N15H is suitable for high efficiency synchronous rectification in SMPS, primary side switch and high frequency circuits. FEATURES * Low Gate Charge * High Switching Speed * RDS(ON) < 52mΩ @ VGS=10V, ID=5A * High Cell Density Trench Technology SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT25N15HL-TM3-T UTT25N15HG-TM3-T UTT25N15HL-TN3-R UTT25N15HG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source UTT25N15HL-TM3-T Package TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel (1)Packing Type (1) T: Tube, R: Tape Reel (2)Package Type (2) TM3: TO-251, TN3: TO-252 (3)Green Package (3) L: Lead Free, G: Halogen Free and Lead Free www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-137.b UTT25N15H Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R209-137.b UTT25N15H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATING (TA =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT VDSS 150 V VGSS ±20 V Continuous ID 25 A Drain Current (TC=25°C) 50 A Pulsed (Note 2) IDM Avalanche Energy (Note 3) Single Pulsed (Note 3) EAS 37 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 7.3 V/nS Power Dissipation TC=25°C PD 50 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 0.1mH, IAS = 27.2A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C 4. ISD ≤ 25A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C Drain-Source Voltage Gate-Source Voltage THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case Steady state Steady state SYMBOL θJA θJC RATINGS 110 2.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=150V, VGS=0V,TJ=25°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V 150 VDS=VGS, ID=250µA VGS=10V, ID=5A VGS=6V, ID=5A 2.0 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG VGS=0V, VDS=0V, f=1.0MHz SWITCHING PARAMETERS Total Gate Charge(Note 1) QG VDS=50V, VGS=10V, ID=1.3A, Gate to Source Charge QGS IG=100μA (Note 1,2) Gate to Drain Charge QGD Turn-on Delay Time(Note 1) tD(ON) VDD =30V, VGS=10V, ID =0.5A, Rise Time tR RG =25Ω (Note 1,2) Turn-off Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=25A, VGS=0V (Note 1) Reverse Recovery Time (Note 1) trr IS=25A, VGS=0V, dI/dt=100A/μs Reverse Recovery Charge Qrr Notes: 1. Pulse test: pulse width ≤ 300us, duty cycle ≤ 2%, Starting TJ=25°C. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 +100 -100 V µA nA nA 4.0 52 60 V mΩ mΩ 3.0 pF pF pF Ω 2920 193 78 63 14 10 122 70 330 87 76 225 nC nC nC ns ns ns ns 25 50 A A 1.5 V nS nC 3 of 6 QW-R209-137.b UTT25N15H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-137.b UTT25N15H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-137.b UTT25N15H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-137.b