Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4320T
20 V NPN low VCEsat transistor
Product data sheet
Supersedes data of 2002 Aug 08
2004 Mar 18
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat and
corresponding low RCEsat
SYMBOL
• High collector current capability
• High collector current gain
• Improved efficiency due to reduced heat generation.
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
20
V
IC
collector current (DC)
2
A
ICRP
repetitive peak collector
current
3
A
RCEsat
equivalent on-resistance
105
mΩ
APPLICATIONS
• Power management applications
PINNING
• Low and medium power DC/DC convertors
PIN
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
1
base
2
emitter
3
collector
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS5320T.
handbook, halfpage
3
3
1
MARKING
MARKING CODE(1)
TYPE NUMBER
PBSS4320T
1
ZG*
Top view
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PBSS4320T
2004 Mar 18
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
2
VERSION
SOT23
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
20
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
2
A
ICRP
repetitive peak collector current
note 1
−
3
A
ICM
peak collector current
single peak
−
5
A
IB
base current (DC)
Ptot
total power dissipation
−
0.5
A
Tamb ≤ 25 °C; note 2
−
300
mW
Tamb ≤ 25 °C; note 3
−
480
mW
Tamb ≤ 25 °C; note 4
−
540
mW
Tamb ≤ 25 °C; notes 1 and 2
−
1.2
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
VALUE
UNIT
in free air; note 1
417
K/W
in free air; note 2
260
K/W
in free air; note 3
230
K/W
in free air; notes 1 and 4
104
K/W
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2004 Mar 18
3
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
−
−
100
nA
IE = 0 A; VCB = 20 V; Tj = 150 °C
−
−
50
μA
nA
collector-base cut-off current IE = 0 A; VCB = 20 V
IEBO
emitter-base cut-off current
IC = 0 A; VEB = 5 V
−
−
100
hFE
DC current gain
IC = 100 mA; VCE = 2 V
220
−
−
IC = 500 mA; VCE = 2 V
220
−
−
IC = 1 A; VCE = 2 V; note 1
220
−
−
IC = 2 A; VCE = 2 V; note 1
200
−
−
IC = 3 A; VCE = 2 V; note 1
150
−
−
IC = 500 mA; IB = 50 mA
−
−
70
mV
IC = 1 A; IB = 50 mA
−
−
120
mV
IC = 2 A; IB = 40 mA; note 1
−
−
230
mV
IC = 2 A; IB = 200 mA; note 1
−
−
210
mV
IC = 3 A; IB = 300 mA; note 1
−
−
310
mV
VCEsat
collector-emitter saturation
voltage
RCEsat
equivalent on-resistance
IC = 2 A; IB = 200 mA; note 1
−
80
105
mΩ
VBEsat
base-emitter saturation
voltage
IC = 2 A; IB = 40 mA; note 1
−
−
1.1
V
IC = 3 A; IB = 300 mA; note 1
−
−
1.2
V
VBEon
base-emitter turn-on voltage
IC = 1 A; VCE = 2 V; note 1
1.2
−
−
V
fT
transition frequency
IC = 100 mA; VCE = 5 V;
f = 100 MHz
100
−
−
MHz
Cc
collector capacitance
IE = Ie = 0 A; VCB = 10 V; f = 1 MHz
−
−
35
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Mar 18
4
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
MLD849
800
MLD850
1200
handbook, halfpage
handbook, halfpage
hFE
VBE
(mV)
600
(1)
800
(1)
(2)
400
(2)
(3)
400
(3)
200
0
10−1
1
10
102
0
10−1
103
104
IC (mA)
1
VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD851
1400
10
102
Base-emitter voltage as a function of
collector current; typical values.
MLD852
1400
handbook, halfpage
103
104
IC (mA)
handbook, halfpage
VBEsat
VBEsat
(mV)
(mV)
1000
1000
(1)
(1)
(2)
(2)
(3)
600
200
10−1
1
10
102
600
(3)
200
10−1
103
104
IC (mA)
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
1
(3) Tamb = 150 °C.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 18
5
10
102
103
104
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
MLD853
103
handbook, halfpage
MLD854
103
handbook, halfpage
VCEsat
(mV)
VCEsat
(mV)
(1)
(2)
102
102
(3)
(1)
10
(2)
10
(3)
1
10−1
1
10
102
1
10−1
103
104
IC (mA)
1
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6
Fig.7
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD855
103
handbook, halfpage
10
102
103
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD856
103
handbook, halfpage
VCEsat
(mV)
VCEsat
(mV)
102
102
(1)
(3)
(2)
(1)
(2)
10
10
(3)
1
10−1
1
10
102
1
10−1
103
104
IC (mA)
IC/IB = 50.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
1
(3) Tamb = −55 °C.
IC/IB = 100.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.8
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 18
6
10
102
103
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
MLD857
102
handbook, halfpage
RCEsat
(Ω)
10
1
(1)
(2)
10−1
10−2
10−1
(3)
1
10
102
103
104
IC (mΑ)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.10 Equivalent on-resistance as a function of
collector current; typical values.
2004 Mar 18
7
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Mar 18
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
8
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Mar 18
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/02/pp10
Date of release: 2004 Mar 18
Document order number: 9397 750 12436