DISCRETE SEMICONDUCTORS DATA SHEET PBSS4350T 50 V; 3 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Jan 09 NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat SYMBOL • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. PARAMETER MAX. UNIT VCEO collector-emitter voltage 50 V IC collector current (DC) 2 A ICRP repetitive peak collector current 3 A RCEsat equivalent on-resistance 130 mΩ APPLICATIONS • Power management applications PINNING • Low and medium power DC/DC convertors PIN • Supply line switching • Battery chargers • Linear voltage regulation with low voltage drop-out (LDO). DESCRIPTION 1 base 2 emitter 3 collector DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5350T. handbook, halfpage 3 3 1 MARKING MARKING CODE(1) TYPE NUMBER PBSS4350T 1 ZC* Top view Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. 2 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER PBSS4350T 2004 Jan 09 PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads 2 VERSION SOT23 NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 2 A ICRP repetitive peak collector current note 1 − 3 A ICM peak collector current single peak − 5 A IB base current (DC) Ptot total power dissipation − 0.5 A Tamb ≤ 25 °C; note 2 − 300 mW Tamb ≤ 25 °C; note 3 − 480 mW Tamb ≤ 25 °C; note 4 − 540 mW Tamb ≤ 25 °C; notes 1 and 2 − 1.2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT in free air; note 1 417 K/W in free air; note 2 260 K/W in free air; note 3 230 K/W in free air; notes 1 and 4 104 K/W Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25. 2004 Jan 09 3 NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MIN. TYP. MAX. UNIT − − 100 nA IE = 0; VCB = 50 V; Tj = 150 °C − − 50 μA nA collector-base cut-off current IE = 0; VCB = 50 V IEBO emitter-base cut-off current IC = 0; VEB = 5 V − − 100 hFE DC current gain IC = 100 mA; VCE = 2 V 300 − − IC = 500 mA; VCE = 2 V 300 − − IC = 1 A; VCE = 2 V; note 1 300 − − IC = 2 A; VCE = 2 V; note 1 200 − − IC = 3 A; VCE = 2 V; note 1 100 − − IC = 500 mA; IB = 50 mA − − 80 mV IC = 1 A; IB = 50 mA − − 160 mV IC = 2 A; IB = 100 mA; note 1 − − 280 mV IC = 2 A; IB = 200 mA; note 1 − − 260 mV IC = 3 A; IB = 300 mA; note 1 − − 370 mV VCEsat collector-emitter saturation voltage RCEsat equivalent on-resistance IC = 2 A; IB = 200 mA; note 1 − 100 130 mΩ VBEsat base-emitter saturation voltage IC = 2 A; IB = 100 mA; note 1 − − 1.1 V IC = 3 A; IB = 300 mA; note 1 − − 1.2 V VBEon base-emitter turn-on voltage IC = 1 A; VCE = 2 V; note 1 1.2 − − V fT transition frequency IC = 100 mA; VCE = 5 V; f = 100 MHz 100 − − MHz Cc collector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz − − 25 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Jan 09 4 NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor MLD867 1000 PBSS4350T MLD868 1200 handbook, halfpage handbook, halfpage hFE VBE (mV) 800 (1) 800 (1) 600 (2) (2) 400 (3) 400 (3) 200 0 10−1 1 10 102 0 10−1 103 104 IC (mA) 1 VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MLD869 1300 10 102 Base-emitter voltage as a function of collector current; typical values. MLD870 1300 handbook, halfpage 103 104 IC (mA) handbook, halfpage VBEsat VBEsat (mV) (mV) (1) 900 (1) 900 (2) (2) (3) (3) 500 500 100 10−1 1 10 102 100 10−1 103 104 IC (mA) IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. 1 (3) Tamb = 150 °C. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Jan 09 5 10 102 103 104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor MLD871 103 handbook, halfpage PBSS4350T MLD872 103 handbook, halfpage VCEsat VCEsat (mV) (mV) (1) (2) 102 102 (3) (1) (2) 10 10 (3) 1 10−1 1 10 102 1 10−1 103 104 IC (mA) 1 IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. MLD873 104 handbook, halfpage 10 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. MLD874 104 handbook, halfpage VCEsat (mV) VCEsat (mV) 103 103 102 102 (1) (1) (2) (2) (3) (3) 10 10−1 1 10 102 10 10−1 103 104 IC (mA) IC/IB = 50. (1) Tamb = 150 °C. (2) Tamb = 25 °C. 1 (3) Tamb = −55 °C. IC/IB = 100. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Jan 09 6 10 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor MLD875 103 handbook, halfpage RCEsat (Ω) 102 10 1 (1) 10−1 10−2 −1 10 (2) 1 10 102 (3) 103 104 IC (mA) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.10 Equivalent on-resistance as a function of collector current; typical values. 2004 Jan 09 7 PBSS4350T NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Jan 09 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 8 NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. 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Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Jan 09 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp10 Date of release: 2004 Jan 09 Document order number: 9397 750 12437