Data Sheet

PBLS2004D
20 V PNP BISS loadswitch
Rev. 01 — 23 June 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
plastic package.
1.2 Features
■
■
■
■
■
Low VCEsat (BISS) and resistor-equipped transistor in one package
Low threshold voltage (< 1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
1.3 Applications
■
■
■
■
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
1.4 Quick reference data
Table 1:
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage
IC
collector current (DC)
RCEsat
collector-emitter saturation
resistance
open base
IC = −1 A;
IB = −100 mA
[1]
-
-
−20
V
-
-
−1
A
-
185
280
mΩ
-
-
50
V
TR2; NPN resistor-equipped transistor
VCEO
collector-emitter voltage
IO
output current
-
-
100
mA
R1
bias resistor 1 (input)
15.4
22
28.6
kΩ
R2/R1
bias resistor ratio
0.8
1
1.2
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
open base
PBLS2004D
Philips Semiconductors
20 V PNP BISS loadswitch
2. Pinning information
Table 2:
Pinning
Pin
Description
Simplified outline
1
emitter TR1
2
base TR1
3
output (collector) TR2
4
GND (emitter) TR2
5
input (base) TR2
6
collector TR1
6
5
4
1
2
3
Symbol
6
5
R1
4
R2
TR2
TR1
1
2
3
sym036
3. Ordering information
Table 3:
Ordering information
Type number
PBLS2004D
Package
Name
Description
Version
SC-74
plastic surface mounted package; 6 leads
SOT457
4. Marking
Table 4:
Marking codes
Type number
Marking code
PBLS2004D
F9
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
open emitter
-
−20
V
TR1; PNP low VCEsat transistor
VCBO
collector-base voltage
VCEO
collector-emitter voltage
open base
-
−20
V
VEBO
emitter-base voltage
open collector
-
−5
V
IC
collector current (DC)
-
−1
A
ICM
peak collector current
-
−2
A
IB
base current (DC)
-
−0.3
A
IBM
peak base current
tp ≤ 300 µs
-
−0.6
A
total power dissipation
Tamb ≤ 25 °C
[1]
-
250
mW
[2]
-
350
mW
[3]
-
400
mW
Ptot
tp ≤ 300 µs
PBLS2004D_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01— 23 June 2005
2 of 16
PBLS2004D
Philips Semiconductors
20 V PNP BISS loadswitch
Table 5:
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
-
50
V
TR2; NPN resistor-equipped transistor
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
-
50
V
VEBO
emitter-base voltage
open collector
-
10
V
VI
input voltage
positive
-
+40
V
negative
-
−10
V
IO
output current
-
100
mA
ICM
peak collector current
tp ≤ 300 µs
total power dissipation
Tamb ≤ 25 °C
Ptot
-
100
mA
[1]
-
200
mW
[1]
-
400
mW
[2]
-
530
mW
[3]
-
600
mW
Per device
total power dissipation
Ptot
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa414
0.8
Ptot
(W)
(1)
0.6
(2)
(3)
0.4
0.2
0
0
40
80
120
160
Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
PBLS2004D_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01— 23 June 2005
3 of 16
PBLS2004D
Philips Semiconductors
20 V PNP BISS loadswitch
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance from
junction to ambient
in free air
Min
Typ
Max
Unit
[1]
-
-
315
K/W
[2]
-
-
236
K/W
[3]
-
-
210
K/W
Per device
Rth(j-a)
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa415
103
duty cycle =
1
Zth(j-a)
0.75
(K/W)
0.5
0.33
102 0.2
0.1
0.05
10
1
0.02
0.01
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
t p (s)
FR4 PCB, standard footprint
Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical
values
PBLS2004D_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01— 23 June 2005
4 of 16
PBLS2004D
Philips Semiconductors
20 V PNP BISS loadswitch
006aaa463
103
Zth(j-a)
(K/W)
δ=1
102
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical
values
006aaa464
103
Zth(j-a)
(K/W) δ = 1
0.75
0.5
2
10
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical
values
PBLS2004D_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01— 23 June 2005
5 of 16
PBLS2004D
Philips Semiconductors
20 V PNP BISS loadswitch
7. Characteristics
Table 7:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCB = −20 V; IE = 0 A
-
-
−0.1
µA
VCB = −20 V; IE = 0 A;
Tj = 150 °C
-
-
−50
µA
TR1; PNP low VCEsat transistor
ICBO
collector-base cut-off
current
ICES
collector-emitter
cut-off current
VCE = −20 V; VBE = 0 V
-
-
−0.1
µA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−0.1
µA
hFE
DC current gain
VCE = −2 V; IC = −1 mA
220
495
-
VCE = −2 V; IC = −100 mA
VCEsat
collector-emitter
saturation voltage
220
440
-
VCE = −2 V; IC = −500 mA
[1]
220
310
-
VCE = −2 V; IC = −1 A
[1]
155
220
-
VCE = −2 V; IC = −2 A
[1]
60
120
-
IC = −100 mA; IB = −1 mA
-
−55
−90
mV
IC = −500 mA; IB = −50 mA
[1]
-
−100
−150
mV
IC = −1 A; IB = −50 mA
[1]
-
−200
−300
mV
IC = −1 A; IB = −100 mA
[1]
-
−185
−280
mV
-
185
280
mΩ
RCEsat
collector-emitter
saturation resistance
IC = −1 A; IB = −100 mA
[1]
VBEsat
base-emitter
saturation voltage
IC = −1 A; IB = −50 mA
[1]
-
−0.95
−1.1
V
IC = −1 A; IB = −100 mA
[1]
-
−1
−1.1
V
VBEon
base-emitter
turn-on voltage
VCE = −5 V; IC = −1 A
[1]
-
−0.85
−1.1
V
td
delay time
-
8
-
ns
tr
rise time
IC = −1 A; IBon = −50 mA;
IBoff = 50 mA
-
34
-
ns
ton
turn-on time
-
42
-
ns
ts
storage time
-
140
-
ns
tf
fall time
-
45
-
ns
toff
turn-off time
-
185
-
ns
fT
transition frequency
IC = −50 mA; VCE = −10 V;
f = 100 MHz
150
185
-
MHz
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
-
15
20
pF
PBLS2004D_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01— 23 June 2005
6 of 16
PBLS2004D
Philips Semiconductors
20 V PNP BISS loadswitch
Table 7:
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
TR2; NPN resistor-equipped transistor
ICBO
collector-base cut-off
current
VCB = 50 V; IE = 0 A
-
-
100
nA
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
-
-
1
µA
VCE = 30 V; IB = 0 A;
Tj = 150 °C
-
-
50
µA
µA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
180
hFE
DC current gain
VCE = 5 V; IC = 5 mA
60
-
-
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
-
150
mV
VI(off)
off-state input voltage VCE = 5 V; IC = 100 µA
-
1.1
0.8
V
VI(on)
on-state input voltage VCE = 0.3 V; IC = 5 mA
2.5
1.7
-
V
R1
bias resistor 1 (input)
15.4
22
28.6
kΩ
R2/R1
bias resistor ratio
Cc
collector capacitance
[1]
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
1
1.2
-
2.5
pF
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBLS2004D_1
Product data sheet
0.8
-
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01— 23 June 2005
7 of 16
PBLS2004D
Philips Semiconductors
20 V PNP BISS loadswitch
006aaa416
1000
006aaa417
−1
hFE
VCEsat
(V)
800
(1)
−10−1
600
(1)
(2)
(3)
(2)
400
−10−2
(3)
200
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −2 V
−10−3
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = −55 °C
Fig 5. TR1 (PNP): DC current gain as a function of
collector current; typical values
006aaa418
−1.0
Fig 6. TR1 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa419
−1.2
VBEsat
(V)
VBE
(V)
−0.8
(1)
−1.0
(2)
−0.8
(1)
(2)
−0.6
−0.6
(3)
−0.4
−0.2
−10−1
(3)
−0.4
−1
−10
−102
−103
−104
IC (mA)
VCE = −5 V
−0.2
−10−1
−1
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig 7. TR1 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig 8. TR1 (PNP): Base-emitter saturation voltage as a
function of collector current; typical values
PBLS2004D_1
Product data sheet
−10
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01— 23 June 2005
8 of 16
PBLS2004D
Philips Semiconductors
20 V PNP BISS loadswitch
006aaa420
−2.0
−11.7 mA
−10.4 mA
−9.1 mA
−7.8 mA
IB = −13 mA
IC
(A)
−1.6
006aaa421
102
RCEsat
(Ω)
−6.5 mA
−5.2 mA
−1.2
10
−3.9 mA
−2.6 mA
−0.8
1
(1)
(2)
(3)
−1.3 mA
−0.4
−0
−0
−2
−4
−6
10−1
−10−1
−1
−10
−102
VCE (V)
Tamb = 25 °C
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 9. TR1 (PNP): Collector current as a function of
collector-emitter voltage; typical values
006aaa422
−1
Fig 10. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
006aaa423
103
RCEsat
(Ω)
VCEsat
(V)
102
−10−1
10
(1)
(2)
−10−2
1
(3)
(1)
(2)
(3)
−10−3
−10−1
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
10−1
−10−1
−1
−102
−103
−104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(1) IC/IB = 100
(2) IC/IB = 50
(2) IC/IB = 50
(3) IC/IB = 10
(3) IC/IB = 10
Fig 11. TR1 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
Fig 12. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
PBLS2004D_1
Product data sheet
−10
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01— 23 June 2005
9 of 16
PBLS2004D
Philips Semiconductors
20 V PNP BISS loadswitch
006aaa038
103
006aaa039
10−1
hFE
(1)
(1)
(2)
(3)
VCEsat
(V)
(2)
102
(3)
10
1
10−1
1
102
10
10−2
1
IC (mA)
VCE = 5 V
IC/IB = 20
(1) Tamb = 150 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(3) Tamb = −40 °C
Fig 13. TR2 (NPN): DC current gain as a function of
collector current; typical values
006aaa040
10
102
10
IC (mA)
Fig 14. TR2 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa041
10
VI(on)
(V)
VI(off)
(V)
(1)
(2)
(3)
1
1
(1)
(2)
(3)
10−1
10−1
1
102
10
10−1
10−1
IC (mA)
102
10
IC (mA)
VCE = 0.3 V
VCE = 5 V
(1) Tamb = −40 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig 15. TR2 (NPN): On-state input voltage as a function
of collector current; typical values
Fig 16. TR2 (NPN): Off-state input voltage as a function
of collector current; typical values
PBLS2004D_1
Product data sheet
1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01— 23 June 2005
10 of 16
PBLS2004D
Philips Semiconductors
20 V PNP BISS loadswitch
8. Test information
− IB
input pulse
(idealized waveform)
90 %
− I Bon (100 %)
10 %
− I Boff
output pulse
(idealized waveform)
− IC
90 %
− I C (100 %)
10 %
t
td
ts
tr
t on
tf
t off
006aaa266
Fig 17. BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
oscilloscope
R2
VI
DUT
R1
mgd624
IC = −1 A; IBon = −50 mA; IBoff = 50 mA; R1 = open; R2 = 45 Ω; RB = 145 Ω; RC = 10 Ω
Fig 18. Test circuit for switching times
PBLS2004D_1
Product data sheet
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Rev. 01— 23 June 2005
11 of 16
PBLS2004D
Philips Semiconductors
20 V PNP BISS loadswitch
9. Package outline
3.1
2.7
6
3.0
2.5
1.7
1.3
1.1
0.9
5
4
2
3
0.6
0.2
pin 1 index
1
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
04-11-08
Fig 19. Package outline SOT457 (SC-74)
10. Packing information
Table 8:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
PBLS2004D
Package
SOT457
Description
3000
10000
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
[1]
For further information and the availability of packing methods, see Section 17.
[2]
T1: normal taping
[3]
T2: reverse taping
PBLS2004D_1
Product data sheet
Packing quantity
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01— 23 June 2005
12 of 16
PBLS2004D
Philips Semiconductors
20 V PNP BISS loadswitch
11. Soldering
3.45
1.95
solder lands
0.95
solder resist
0.45 0.55
3.30 2.825
occupied area
solder paste
1.60
1.70
3.10
3.20
msc422
Dimensions in mm
Fig 20. Reflow soldering footprint
5.30
solder lands
solder resist
5.05
0.45 1.45 4.45
occupied area
solder paste
MSC423
1.40
4.30
Dimensions in mm
Fig 21. Wave soldering footprint
PBLS2004D_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01— 23 June 2005
13 of 16
PBLS2004D
Philips Semiconductors
20 V PNP BISS loadswitch
12. Revision history
Table 9:
Revision history
Document ID
Release date
Data sheet status
Change notice Doc. number
Supersedes
PBLS2004D_1
20050623
Product data sheet
-
-
PBLS2004D_1
Product data sheet
-
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01— 23 June 2005
14 of 16
PBLS2004D
Philips Semiconductors
20 V PNP BISS loadswitch
13. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
14. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
16. Trademarks
15. Disclaimers
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
17. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
PBLS2004D_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 23 June 2005
15 of 16
PBLS2004D
Philips Semiconductors
20 V PNP BISS loadswitch
18. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Packing information. . . . . . . . . . . . . . . . . . . . . 12
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contact information . . . . . . . . . . . . . . . . . . . . 15
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 23 June 2005
Document ID: PBLS2004D_1
Published in The Netherlands
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