UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT36N05 Power MOSFET 36A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT36N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT36N05 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc. FEATURES * RDS(ON) < 40mΩ @ VGS=5V * High Switching Speed * High Current Capacity SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT36N05G-AA3-T UTT36N05L-TA3-T UTT36N05G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-220 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube MARKING SOT-223 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd TO-220 1 of 6 QW-R502-654.b UTT36N05 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage (VGS=0) Drain-Gate Voltage (RGS=20kΩ) Gate-Source Voltage RATINGS UNIT 50 V 50 V ±15 V TC=25°C 36 A Continuous ID Drain Current TC=100°C 25 A Pulsed (Note 2) IDM 144 A Single Pulsed EAS 240 mJ Avalanche Energy Repetitive EAR 60 mJ SOT-223 11 W Power Dissipation (TC=25°C) PD TO-220 100 W Junction Temperature TJ 150 °C Storage Temperature TSTG -65~175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area. SYMBOL VDSS VDGR VGSS THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL SOT-223 TO-220 SOT-223 TO-220 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 150 62.5 11 1.25 UNIT °C/W °C/W 2 of 6 QW-R502-654.b UTT36N05 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS ID=250µA, VGS=0V VDS=Max Rating, VGS=0V VDS= Max ×0.8,TC=125°C,VGS=0V VGS=+15V, VDS=0V VGS=-15V, VDS=0V Forward IGSS Reverse ON CHARACTERISTICS (Note 1) Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=5V, ID=18A On State Drain Current ID(ON) VDS>ID(ON)×RDS(ON)max, VGS=10V DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=1.0A, RG=50Ω OFF-Voltage Rise Time tR(VOFF) Fall-Time tF Total Gate Charge QG VGS=5V, VDS=40V, ID=36A Gate to Source Charge QGS Gate to Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM (Note 2) Drain-Source Diode Forward Voltage VSD ISD=36A, VGS=0V (Note 1) Notes: 1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5% 2. Pulse width limited by safe operating area. Gate- Source Leakage Current UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 50 1 V 1 µA 10 +100 nA -100 nA 1.6 2.5 0.033 0.04 36 V Ω A 1000 1800 pF 133 600 pF 90 200 pF 40 60 350 125 76 11 11 60 100 420 160 ns ns ns ns nC nC nC 36 144 1.6 A A V 3 of 6 QW-R502-654.b UTT36N05 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-654.b UTT36N05 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-654.b UTT36N05 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-654.b