Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT36N05
Power MOSFET
36A, 50V N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET TRANSISTOR

DESCRIPTION
The UTC UTT36N05 is an N-channel enhancement power
MOSFET using UTC’s advanced technology to provide the
customers with perfect RDS(ON), high switching speed, high current
capacity and low gate charge.
The UTC UTT36N05 is suitable for motor control, AC-DC or
DC-DC converters and audio amplifiers, etc.

FEATURES
* RDS(ON) < 40mΩ @ VGS=5V
* High Switching Speed
* High Current Capacity

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT36N05G-AA3-T
UTT36N05L-TA3-T
UTT36N05G-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
SOT-223
TO-220
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
MARKING
SOT-223
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
TO-220
1 of 6
QW-R502-654.b
UTT36N05

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage (VGS=0)
Drain-Gate Voltage (RGS=20kΩ)
Gate-Source Voltage
RATINGS
UNIT
50
V
50
V
±15
V
TC=25°C
36
A
Continuous
ID
Drain Current
TC=100°C
25
A
Pulsed (Note 2)
IDM
144
A
Single Pulsed
EAS
240
mJ
Avalanche Energy
Repetitive
EAR
60
mJ
SOT-223
11
W
Power Dissipation (TC=25°C)
PD
TO-220
100
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65~175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.

SYMBOL
VDSS
VDGR
VGSS
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
SOT-223
TO-220
SOT-223
TO-220
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
150
62.5
11
1.25
UNIT
°C/W
°C/W
2 of 6
QW-R502-654.b
UTT36N05

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=Max Rating, VGS=0V
VDS= Max ×0.8,TC=125°C,VGS=0V
VGS=+15V, VDS=0V
VGS=-15V, VDS=0V
Forward
IGSS
Reverse
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=5V, ID=18A
On State Drain Current
ID(ON)
VDS>ID(ON)×RDS(ON)max, VGS=10V
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=1.0A, RG=50Ω
OFF-Voltage Rise Time
tR(VOFF)
Fall-Time
tF
Total Gate Charge
QG
VGS=5V, VDS=40V, ID=36A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
(Note 2)
Drain-Source Diode Forward Voltage
VSD
ISD=36A, VGS=0V (Note 1)
Notes: 1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5%
2. Pulse width limited by safe operating area.
Gate- Source Leakage Current
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
50
1
V
1
µA
10
+100 nA
-100 nA
1.6 2.5
0.033 0.04
36
V
Ω
A
1000 1800 pF
133 600 pF
90 200 pF
40
60
350
125
76
11
11
60
100
420
160
ns
ns
ns
ns
nC
nC
nC
36
144
1.6
A
A
V
3 of 6
QW-R502-654.b
UTT36N05

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-654.b
UTT36N05

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-654.b
UTT36N05
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
QW-R502-654.b
Similar pages