Data Sheet

PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
Rev. 02 — 15 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD
plastic package.
PNP complement: PBS3540E.
1.2 Features
„
„
„
„
„
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„
„
„
„
„
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Low power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
VCEO
collector-emitter voltage
IC
collector current (DC)
ICM
peak collector current
RCEsat
[1]
collector-emitter
saturation resistance
Pulse test: tp ≤ 300 μs; δ ≤ 0.02
Conditions
Min
open base
IC = 500 mA;
IB = 50 mA
[1]
Typ
Max
Unit
-
-
40
V
-
-
500
mA
-
-
1
A
-
380
500
mΩ
PBSS2540E
NXP Semiconductors
40 V, 500 mA NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
base
2
emitter
3
collector
Simplified outline
Symbol
3
3
1
1
2
2
sym021
3. Ordering information
Table 3.
Ordering information
Type number
PBSS2540E
Package
Name
Description
Version
SC-75
plastic surface mounted package; 3 leads
SOT416
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS2540E
1S
PBSS2540E_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 15 November 2009
2 of 11
PBSS2540E
NXP Semiconductors
40 V, 500 mA NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
40
V
VCEO
collector-emitter voltage
open base
-
40
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current (DC)
-
500
mA
ICM
peak collector current
-
1
A
IBM
peak base current
-
100
mA
Ptot
total power dissipation
[1]
-
150
mW
[2]
-
250
mW
Tamb ≤ 25 °C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
006aaa412
300
Ptot
(mW)
(1)
200
(2)
100
0
0
40
80
120
160
Tamb (°C)
(1) FR4 PCB, mounting pad for collector 1cm2
(2) FR4 PCB, standard footprint
Fig 1.
Power derating curves
PBSS2540E_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 15 November 2009
3 of 11
PBSS2540E
NXP Semiconductors
40 V, 500 mA NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-a)
Conditions
thermal resistance from
junction to ambient
in free air
Min
Typ
Max
Unit
[1]
-
-
833
K/W
[2]
-
-
500
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
006aaa413
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.5
0.33
0.75
0.2
0.1
0.05
0.02
10
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
t p (s)
FR4 PCB, mounting pad for collector 1cm2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PBSS2540E_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 15 November 2009
4 of 11
PBSS2540E
NXP Semiconductors
40 V, 500 mA NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 30 V; IE = 0 A
-
-
100
nA
VCB = 30 V; IE = 0 A;
Tj = 150 °C
-
-
50
μA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
100
nA
hFE
DC current gain
VCE = 2 V; IC = 10 mA
200
-
-
VCEsat
collector-emitter
saturation voltage
VCE = 2 V; IC = 100 mA
[1]
100
-
-
VCE = 2 V; IC = 500 mA
[1]
50
-
-
IC = 10 mA; IB = 0.5 mA
-
-
50
mV
IC = 100 mA; IB = 5 mA
-
-
100
mV
IC = 200 mA; IB = 10 mA
-
-
200
mV
IC = 500 mA; IB = 50 mA
[1]
-
-
250
mV
-
380
500
mΩ
-
-
1.2
V
RCEsat
collector-emitter
saturation resistance
IC = 500 mA; IB = 50 mA
[1]
VBEsat
base-emitter
saturation voltage
IC = 500 mA; IB = 50 mA
[1]
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 100 mA
-
-
1.1
V
fT
transition frequency
VCE = 5 V; IC = 100 mA;
f = 100 MHz
250
450
-
MHz
Cc
collector capacitance
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
-
6
pF
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02
PBSS2540E_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 15 November 2009
5 of 11
PBSS2540E
NXP Semiconductors
40 V, 500 mA NPN low VCEsat (BISS) transistor
006aaa380
600
hFE
500
006aaa381
1100
VBE
(mV)
900
(1)
(1)
400
(2)
700
(2)
300
(3)
500
(3)
200
300
100
0
10-1
1
10
102
103
100
10−1
1
10
102
IC (mA)
VCE = 2 V
VCE = 2 V
(1) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3.
103
IC (mA)
(3) Tamb = 100 °C
DC current gain as a function of collector
current; typical values
Fig 4.
006aaa382
1
Base-emitter voltage as a function of collector
current; typical values
006aaa383
1
VCEsat
(V)
VCEsat
(V)
10−1
10−1
(1)
(1)
(2)
(3)
(2)
(3)
10−2
10−1
1
10
102
103
10−2
10−1
1
IC (mA)
103
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 6.
Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS2540E_2
Product data sheet
102
IC (mA)
IC/IB = 20
Fig 5.
10
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 15 November 2009
6 of 11
PBSS2540E
NXP Semiconductors
40 V, 500 mA NPN low VCEsat (BISS) transistor
006aaa384
1.2
VBEsat
(V)
1.0
006aaa385
103
RCEsat
(Ω)
102
(1)
0.8
(2)
(3)
0.6
10
(1)
(2)
(3)
0.4
1
0.2
0
10−1
1
102
10
103
10−1
10−1
1
10
102
IC (mA)
IC/IB = 20
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = −55 °C
Fig 7.
103
IC (mA)
Base-emitter saturation voltage as a function
of collector current; typical values
006aaa386
1
IB (mA) = 25
22.5
20
17.5
15
12.5
10
7.5
5
IC
(A)
0.8
0.6
Fig 8.
Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa387
103
RCEsat
(Ω)
102
10
2.5
(1)
(2)
(3)
0.4
1
0.2
0
0
1
2
3
4
5
10−1
10−1
1
VCE (V)
Tamb = 25 °C
10
102
103
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 9.
Collector current as a function of
collector-emitter voltage; typical values
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS2540E_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 15 November 2009
7 of 11
PBSS2540E
NXP Semiconductors
40 V, 500 mA NPN low VCEsat (BISS) transistor
8. Package outline
0.95
0.60
1.8
1.4
3
0.45
0.15
1.75 0.9
1.45 0.7
1
2
0.30
0.15
0.25
0.10
1
Dimensions in mm
04-11-04
Fig 11. Package outline SOT416 (SC-75)
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PBSS2540E
[1]
Package
SOT416
Description
Packing quantity
4 mm pitch, 8 mm tape and reel
3000
10000
-115
-135
For further information and the availability of packing methods, see Section 13.
10. Soldering
2.2
0.6
1.1
0.7
2
2.0
3
0.85
1.5
1
0.6
(3x)
1.9
Dimensions in mm
0.5
(3x)
msa438
solder lands
solder resist
solder paste
occupied area
Reflow soldering is the only recommended soldering method.
Fig 12. Reflow soldering footprint
PBSS2540E_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 15 November 2009
8 of 11
PBSS2540E
NXP Semiconductors
40 V, 500 mA NPN low VCEsat (BISS) transistor
11. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS2540E_2
20091115
Product data sheet
-
PBSS2540E_1
Modifications:
PBSS2540E_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
Figure 5 “Collector-emitter saturation voltage as a function of collector current; typical
values”: VCEsat unit amended from mV to V
•
Figure 6 “Collector-emitter saturation voltage as a function of collector current; typical
values”: VCEsat unit amended from mV to V
•
Figure 12 “Reflow soldering footprint”: updated
20050504
Product data sheet
-
PBSS2540E_2
Product data sheet
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 15 November 2009
9 of 11
PBSS2540E
NXP Semiconductors
40 V, 500 mA NPN low VCEsat (BISS) transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PBSS2540E_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 15 November 2009
10 of 11
PBSS2540E
NXP Semiconductors
40 V, 500 mA NPN low VCEsat (BISS) transistor
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 15 November 2009
Document identifier: PBSS2540E_2
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