Data Sheet

SO
T4
57
PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 6 — 28 June 2011
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4350D
1.2 Features and benefits
 Low collector-emitter saturation
voltage VCEsat
 High current capability
 AEC-Q101 qualified
 Smaller Printed-Circuit Board (PCB)
area than for conventional transistors
 High efficiency due to less heat
generation
1.3 Applications
 Supply line switching circuits
 DC-to-DC conversion
 Battery management applications
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-50
V
IC
collector current
-
-
-3
A
ICM
peak collector current
-
-
-5
A
RCEsat
collector-emitter
saturation resistance
-
120
150
mΩ
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
PBSS5350D
NXP Semiconductors
50 V, 3 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
C
collector
2
C
collector
3
B
base
4
E
emitter
5
C
collector
6
C
collector
Simplified outline
6
5
Graphic symbol
4
1, 2, 5, 6
3
1
2
3
SOT457 (TSOP6)
4
sym030
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS5350D
TSOP6
plastic surface-mounted package (TSOP6); 6 leads
SOT457
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS5350D
53
PBSS5350D
Product data sheet
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Rev. 6 — 28 June 2011
© NXP B.V. 2011. All rights reserved.
2 of 12
PBSS5350D
NXP Semiconductors
50 V, 3 A PNP low VCEsat (BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
-60
V
VCEO
collector-emitter voltage
open base
-
-50
V
open collector
VEBO
emitter-base voltage
-
-6
V
IC
collector current
-
-3
A
ICM
peak collector current
-
-5
A
IBM
peak base current
Tamb ≤ 25 °C
total power dissipation
Ptot
-
-1
A
[1]
-
600
mW
[2]
-
750
mW
[3]
-
1200
mW
-
150
°C
Tj
junction temperature
Tamb
ambient temperature
-65
150
°C
Tstg
storage temperature
-65
150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3]
Device mounted on an FR4 4-layer PCB.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
pulsed; tp ≤ 50 ms; δ ≤ 0.5.; in free air
Min
Typ
Max
Unit
[1]
-
-
208
K/W
[2]
-
-
160
K/W
[2]
-
-
100
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
PBSS5350D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 28 June 2011
© NXP B.V. 2011. All rights reserved.
3 of 12
PBSS5350D
NXP Semiconductors
50 V, 3 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = -50 V; IE = 0 A; Tamb = 25 °C
-
-
-100
nA
VCB = -50 V; IE = 0 A; Tj = 150 °C
-
-
-50
µA
nA
IEBO
emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-100
hFE
DC current gain
VCE = -2 V; IC = -500 mA; Tamb = 25 °C
200
-
-
VCE = -2 V; IC = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
200
-
-
VCE = -2 V; IC = -2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
100
-
-
IC = -500 mA; IB = -50 mA; Tamb = 25 °C
-
-
-100
mV
IC = -1 A; IB = -50 mA; Tamb = 25 °C
-
-
-180
mV
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-
-300
mV
-
120
150
mΩ
-
-
-1.2
V
VCEsat
collector-emitter
saturation voltage
RCEsat
collector-emitter
saturation resistance
VBEsat
base-emitter saturation
voltage
VBEon
base-emitter turn-on
voltage
VCE = -2 V; IC = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-
-1.1
V
fT
transition frequency
VCE = -5 V; IC = -100 mA; f = 100 MHz;
Tamb = 25 °C
100
-
-
MHz
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
-
40
pF
PBSS5350D
Product data sheet
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Rev. 6 — 28 June 2011
© NXP B.V. 2011. All rights reserved.
4 of 12
PBSS5350D
NXP Semiconductors
50 V, 3 A PNP low VCEsat (BISS) transistor
mgw167
1000
006aac605
–1000
IB (nA) = –3.96
IC
(mA)
hFE
–3.63
–3.30
–800
800
–2.97
–2.64
(1)
–2.31
–600
600
–1.98
–1.65
(2)
400
–400
–1.32
–0.99
(3)
200
–0.66
–200
–0.33
0
−10−1
−1
−10
−102
0
0.0
−103
−104
IC (mA)
VCE = -2 V
–0.4
–0.8
–1.2
–1.6
–2.0
VCE (V)
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig 1.
DC current gain as a function of collector
current; typical values
–5
IC
(A)
006aac606
IB (mA) = –250
–225
–200
–3
–150
–125
–100
–75
Collector current as a function of
collector-emitter voltage; typical values
mgw168
−1.2
–175
–4
Fig 2.
VBE
(V)
(1)
−0.8
–50
(2)
–25
–2
−0.4
(3)
–1
0
0.0
–0.4
–0.8
–1.2
0
−10−1
–1.6
–2.0
VCE (V)
−1
−10
−102
−103
−104
IC (mA)
VCE = -2 V
Tamb = 25 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 3.
Collector current as a function of
collector-emitter voltage; typical values
PBSS5350D
Product data sheet
Fig 4.
Base-emitter voltage as a function of collector
current; typical values
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Rev. 6 — 28 June 2011
© NXP B.V. 2011. All rights reserved.
5 of 12
PBSS5350D
NXP Semiconductors
50 V, 3 A PNP low VCEsat (BISS) transistor
mgw170
−1.4
VBEsat
(V)
−1.2
mgw169
−103
VCEsat
(mV)
−1.0
−102
(1)
(1)
−0.8
(2)
(2)
(3)
−0.6
−10
(3)
−0.4
−0.2
−10−1
Fig 5.
−1
−10
−102
−1
−10−1
−103
−104
IC (mA)
−1
−10
IC/IB = 10
IC/IB = 10
(1) Tamb = -55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(3) Tamb = -55 °C
Base-emitter saturation voltage as a function of
collector current; typical values
Fig 6.
−102
−103
−104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values
mgu390
103
RCEsat
(Ω)
102
10
1
(1)
10−1
−10−1
(2)
(3)
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig 7.
Collector-emitter saturation resistance as a function of collector current; typical values
PBSS5350D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 28 June 2011
© NXP B.V. 2011. All rights reserved.
6 of 12
PBSS5350D
NXP Semiconductors
50 V, 3 A PNP low VCEsat (BISS) transistor
8. Package outline
Plastic surface-mounted package (TSOP6); 6 leads
D
SOT457
E
B
y
A
HE
6
5
X
v M A
4
Q
pin 1
index
A
A1
c
1
2
3
Lp
bp
e
w M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT457
Fig 8.
JEITA
SC-74
EUROPEAN
PROJECTION
ISSUE DATE
05-11-07
06-03-16
Package outline SOT457 (TSOP6)
PBSS5350D
Product data sheet
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Rev. 6 — 28 June 2011
© NXP B.V. 2011. All rights reserved.
7 of 12
PBSS5350D
NXP Semiconductors
50 V, 3 A PNP low VCEsat (BISS) transistor
9. Soldering
3.45
1.95
0.45 0.55
(6×) (6×)
0.95
solder lands
solder resist
3.3 2.825
0.95
solder paste
occupied area
0.7
(6×)
Dimensions in mm
0.8
(6×)
2.4
Fig 9.
sot457_fr
Reflow soldering footprint for SOT457 (TSOP6)
5.3
1.5
(4×)
solder lands
1.475
0.45
(2×)
5.05
solder resist
occupied area
1.475
Dimensions in mm
preferred transport
direction during soldering
1.45
(6×)
2.85
sot457_fw
Fig 10. Wave soldering footprint for SOT457 (TSOP6)
PBSS5350D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 28 June 2011
© NXP B.V. 2011. All rights reserved.
8 of 12
PBSS5350D
NXP Semiconductors
50 V, 3 A PNP low VCEsat (BISS) transistor
10. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS5350D v.6
20110628
Product data sheet
-
PBSS5350D v.5
Modifications:
•
5 “Limiting values”: Ptot conditions updated.
PBSS5350D v.5
20110323
Product data sheet
-
PBSS5350D v.4
PBSS5350D v.4
20011113
Product specification
-
PBSS5350D v.3
PBSS5350D v.3
20010713
Product specification
-
PBSS5350D v.2
PBSS5350D v.2
20010126
Product specification
-
PBSS5350D v.1
PBSS5350D v.1
20000308
Product specification
-
-
PBSS5350D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 28 June 2011
© NXP B.V. 2011. All rights reserved.
9 of 12
PBSS5350D
NXP Semiconductors
50 V, 3 A PNP low VCEsat (BISS) transistor
11. Legal information
11.1 Data sheet status
Document status [1] [2]
Product status [3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
11.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
PBSS5350D
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 28 June 2011
© NXP B.V. 2011. All rights reserved.
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PBSS5350D
NXP Semiconductors
50 V, 3 A PNP low VCEsat (BISS) transistor
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PBSS5350D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 28 June 2011
© NXP B.V. 2011. All rights reserved.
11 of 12
PBSS5350D
NXP Semiconductors
50 V, 3 A PNP low VCEsat (BISS) transistor
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 June 2011
Document identifier: PBSS5350D