UNISONIC TECHNOLOGIES CO., LTD Preliminary 16N65K-MT Power MOSFET 16A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 16N65K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 16N65K-MT is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. FEATURES * RDS(ON) < 0.54Ω @ VGS = 10 V, ID = 8 A * High Switching Speed * 100% Avalanche Tested SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 16N65KL-TF2-T 16N65KG-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F2 1 G Pin Assignment 2 3 D S Packing Tube 16N65KL-TF2-T (1)Packing Type (1) T: Tube (2)Package Type (2) TF2: TO-220F2 (3)Green Package (3) L: Lead Free, G: Halogen Free and Lead Free MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-B14.d 16N65K-MT Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt RATINGS UNIT 650 V ±30 V Continuous (TC=25°C) 16 (Note 2) A Drain Current 64 (Note 2) A Pulsed (Note 3) Avalanche Current (Note 3) 16 A Single Pulsed (Note 4) 780 mJ Avalanche Energy Repetitive (Note 5) 20 mJ Peak Diode Recovery dv/dt (Note 5) 4.5 V/ns Power Dissipation (TC=25°C) 62 W PD Linear Derating Factor above TC=25°C 0.49 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L = 6.1mH, IAS = 16A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 5. ISD ≤ 16A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C Drain-Source Voltage Gate-Source Voltage THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 2.0 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=650V, VGS=0V VDS=520V, VGS=0V, TC=125°C VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=8A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VDS=30V, ID=0.5A, RG=25Ω Rise Time tR (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF Total Gate Charge QG VGS=10V, VDS=50V, ID=1.3A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=16A, VGS=0V Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 650 2.0 1 10 +100 -100 V µA µA nA nA 4.0 0.35 0.54 V Ω 1078 225 10 pF pF pF 112 186 335 186 57 15.4 15.8 ns ns ns ns nC nC nC 16 64 1.4 A A V 2 of 5 QW-R502-B14.d 16N65K-MT Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-B14.d 16N65K-MT Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 5 QW-R502-B14.d 16N65K-MT Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-B14.d