Analog Power AM90N30-290B N-Channel 300-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 300 PRODUCT SUMMARY rDS(on) (mΩ) 290 @ VGS = 10V ID (A) 23 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 300 VGS Gate-Source Voltage ±20 a TC=25°C ID 23 Continuous Drain Current IDM Pulsed Drain Current b 100 IS 23 Continuous Source Current (Diode Conduction) a a T =25°C P 300 Power Dissipation C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case a Symbol Maximum RθJA 62.5 RθJC 0.5 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM90N30-290B_1A Analog Power AM90N30-290B Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a ID(on) rDS(on) gfs VSD Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 240 V, VGS = 0 V VDS = 240 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 2 A VDS = 15 V, ID = 2 A IS = 12 A, VGS = 0 V Min Typ Max 1 ±10 1 10 30 290 12 0.82 Unit V uA uA A mΩ S V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 100 V, VGS = 10 V, ID = 2 A VDS = 100 V, RL = 50 Ω, ID = 2 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 Mhz 25 5.1 6.6 13 10 43 20 1728 128 52 nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. 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APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AM90N30-290B_1A Analog Power AM90N30-290B Typical Electrical Characteristics 0.8 10 8 0.6 0.4 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 4.5V 5V,5.5V,6V,8V,10V 0.2 6 4 2 0 0 0 2 4 6 8 0 10 ID-Drain Current (A) 4 6 8 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 1 100 TJ = 25°C ID = 2A TJ = 25°C 0.8 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 0.6 0.4 0.2 0 10 1 0.1 0.01 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 10 2500 F = 1MHz 10V,8V,6V,5.5V Ciss 2000 5V Capacitance (pf) ID - Drain Current (A) 8 4.5V 6 4 2 1500 1000 500 Coss Crss 0 0 0 1 2 3 4 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM90N30-290B_1A Analog Power AM90N30-290B Typical Electrical Characteristics 2.5 VDS = 100V ID = 2A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 0 2 1.5 1 0.5 0 10 20 30 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 1000 PEAK TRANSIENT POWER (W) 300 10 uS 100 100 uS 1 mS ID Current (A) 0 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC 1 0.1 DC Idm limit 250 200 150 100 50 Limited by RDS 0.01 0.1 1 10 100 1000 0 0.001 10000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 RθJA = 62.5 °C /W 0.1 0.05 P(pk) 0.02 t1 t2 0.01 Single Pulse 0.001 0.0001 0.001 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM90N30-290B_1A Analog Power AM90N30-290B Package Information © Preliminary 5 Publication Order Number: DS_AM90N30-290B_1A