Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UD4606Q
Power MOSFET
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)

DESCRIPTION
The UTC UD4606Q provides excellent RDS(ON) and low gate
charge by using advanced trench technology MOSFETs. The
complementary MOSFETs may be help to form a level shifted high
side switch and also for lots of other applications.

SOP-8
FEATURES
* N-Channel: 30V/6.9A
RDS(ON) = 22.5 mΩ (typ.) @ VGS=10V, ID=6.9A
RDS(ON) = 34.5 mΩ (typ.) @ VGS=4.5V, ID=5A
* P-Channel: -30V/-6A
RDS(ON) = 37.5 mΩ (typ.) @ VGS=-10V, ID=-6A
RDS(ON) = 44 mΩ (typ.) @ VGS=-4.5V, ID=-5A
* Reliable and rugged

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
UD4606QG-S08-R
SOP-8
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
Pin Assignment
1 2 3 4 5 6 7 8
S1 G1 S2 G2 D2 D2 D1 D1
Packing
Tape Reel
1 of 8
QW-R211-021.B
UD4606Q
Power MOSFET
MARKING

8
7
6
5
UTC
UD4606QG
1
2
3
4
Date Code
Lot Code
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 10
QW-R211-021.B
UD4606Q

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
N-CHANNEL
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note2)
Pulsed Drain Current (Note2)
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID
IDM
PD
TJ
TSTG
RATINGS
30
±20
6.9
30
2
+150
-55 ~ +150
UNIT
V
V
A
A
W
°С
°С
P-CHANNEL
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 2)
ID
-6
A
Pulsed Drain Current (Note 2)
IDM
-30
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on 1in 2 pad area, t≤10sec

THERMAL DATA
PARAMETER
Junction to Ambient (Note)
Note: Surface Mounted on 1in 2 pad area, t≤10sec
SYMBOL
θJA
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MIN
TYP
67
MAX
80
UNIT
°С/W
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UD4606Q

Power MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
SYMBOL
Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=250uA
VDS=24V, VGS=0V
VDS=0V, VGS=±20V
30
VGS(TH)
VDS=VGS, ID=250uA
VGS=10V, ID=6.9A
VGS=4.5V, ID=5A
1
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=15V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
Turn-ON Rise Time
tR
VDS=15V, VGS=10V, RG=3Ω,
RL=2.2Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
Total Gate Charge (Note2)
QG
VDS=15V, VGS=10V, ID=6.9A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=1A, VGS=0V
Diode Continuous Forward Current (Note3)
IS
Reverse Recovery Time
tRR
IDS=6.9A, dI/dt=100A/μs
Reverse Recovery Charge
QRR
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
1.9
22.5
34.5
MAX UNIT
1
100
V
uA
nA
3
28
42
V
mΩ
mΩ
680
102
77
pF
pF
pF
4.6
4.1
20.6
5.2
13.8
1.82
3.2
ns
ns
ns
ns
nC
nC
nC
0.76
16.5
7.8
1
3
V
A
ns
nC
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UD4606Q

Power MOSFET
LECTRICAL CHARACTERISTICS(Cont.)
P-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=-250uA
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
-30
VGS(TH)
VDS=VGS, ID=-250uA
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-5A
-1.2
RDS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=-15V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
Turn-ON Rise Time
tR
VDS=-15V, VGS=-10V,
RG=3Ω, RL=2.7Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
Total Gate Charge (Note2)
QG
VDS=-15V, VGS=-10V, ID=-6A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=-1A, VGS=0V
Diode Continuous Forward Current (Note3)
IS
Reverse Recovery Time
tRR
IDS=-6A, dI/dt=100A/μs
Reverse Recovery Charge
QRR
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300µs, duty cycle ≤2%.
2
3. Surface Mounted on 1in pad area, t≤10sec.
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
-2
37.5
44
MAX UNIT
-1
±100
V
uA
nA
-2.4
45
58
V
mΩ
mΩ
920
190
122
pF
pF
pF
7.7
5.7
20.2
9.5
18.5
2.7
4.5
ns
ns
ns
ns
nC
nC
nC
-0.76
20
8.8
-1
-4.2
V
A
ns
nC
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
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current,ID (A)
Capacitance (pF)
Drain to Source OnResistance,RDS(ON) (mΩ)
Drain Current,ID (A)
N-CHANNEL
On-Resistance vs. Gate-Source Voltage
70
Body Diode Characteristics
1.0E+01
ID=5A
60
1.0E+00
50
1.0E-01
125℃
40
1.0E-02
125℃
1.0E-03
30
25℃
20
10
2
4
6
8
10
Gate to Source Voltage,VGS (V)
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25℃
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
Body Diode Forward Voltage,VSD (V)
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

Gate- Charge Characteristics
40
VDS=15V
ID=6.9A
8
TJ(Max)=150℃
TA=25℃
30
Power (W)
Gate to Source Voltage,VGS (V)
10
Single Pulse Power Rating Junctionto-Ambient
6
4
20
10
2
0
0
4
6
8
10
Gate Charge,QG (nC)
12
0.001
14
0.01
0.1
1
10
Pulse Width (s)
100
1000
Normalized Transient Thermal
Resistance,ZθJA
2
Drain Current,ID (A)
0
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UD4606Q
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

P-CHANNEL
On-Region Characteristics
-10V
Drain Current,-ID (A)
25
-6V
Transfer Characteristics
30
-4.5V
VDS=-5V
-5V
20
25
Drain Current,-ID (A)
30
-4V
15
10
-3.5V
5
VGS=-3V
20
15
10
125℃
5
0
25℃
0
0
1
2
3
4
Drain to Source Voltage,-VDS (V)
5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Gate to Source Voltage,-VGS (V)
On-Resistance vs. Drain Current
and Gate Voltage
60
Capacitance Characteristics
1500
50
1250
VGS=-4.5V
45
Capacitance (pF)
Drain to Source OnResistance,RDS(ON) (mΩ)
55
40
35
VGS=-10V
30
25
20
CISS
1000
750
500
COSS
250
15
CRSS
0
10
10
15
20
Drain Current,-ID (A)
0
25
5
10
15
20
30
25
Drain to Source Voltage,-VDS (V)
Reverse Drain Current,-IS (A)
5
Drain to Source OnResistance,RDS(ON) (mΩ)
0
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UD4606Q
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

Gate-Charge Characteristics
40
VDS=-15V
ID=-6A
8
TJ(Max)=150℃
TA=25℃
30
Power (W)
Gate to Source Voltage,-VGS (V)
10
6
4
20
10
2
0
100.0
10.0
4
8
16
12
Gate Charge,-QG (nC)
100μs
1ms
10μs
10ms
1s
DC
0.1
0.1
10s
1
0.1
10
Pulse Width (s)
100
1000
Normalized Maximum Transient
Thermal Impedance
Maximum Forward Biased Safe
Operating Area
TJ(Max)=150℃
RDS(ON) Limited
TA=25℃
0.1s
1.0
0
0.001 0.01
20
10
Normalized Transient Thermal
Resistance,ZθJA
0
Drain Current,-ID (A)
Single Pulse Power Rating Junctionto-Ambient
1
D=TON/T
TJ,PK=TA+PDM.Z
θJA.RθJA
RθJA=62.5℃/W
In descending order
D=0.5,0.3,0.1,0.05,0.
02,0.01,single pulse
PD
0.1
TON
Single Pulse
T
0.01
1
10
100
Drain to Source Voltage,-VDS (V)
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0.000010.00010.001 0.01 0.1
1 10
100 1000
Pulse Width (s)
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

For N / P-CHANNEL
Power Derating
Power Derating (%)
100
60
20
0
0
50
100
150
Ambient Temperature, TA ( C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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