UNISONIC TECHNOLOGIES CO., LTD UD4606Q Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC UD4606Q provides excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary MOSFETs may be help to form a level shifted high side switch and also for lots of other applications. SOP-8 FEATURES * N-Channel: 30V/6.9A RDS(ON) = 22.5 mΩ (typ.) @ VGS=10V, ID=6.9A RDS(ON) = 34.5 mΩ (typ.) @ VGS=4.5V, ID=5A * P-Channel: -30V/-6A RDS(ON) = 37.5 mΩ (typ.) @ VGS=-10V, ID=-6A RDS(ON) = 44 mΩ (typ.) @ VGS=-4.5V, ID=-5A * Reliable and rugged SYMBOL ORDERING INFORMATION Ordering Number Package UD4606QG-S08-R SOP-8 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D2 D2 D1 D1 Packing Tape Reel 1 of 8 QW-R211-021.B UD4606Q Power MOSFET MARKING 8 7 6 5 UTC UD4606QG 1 2 3 4 Date Code Lot Code UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 10 QW-R211-021.B UD4606Q Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified) N-CHANNEL PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note2) Pulsed Drain Current (Note2) Power Dissipation Junction Temperature Storage Temperature SYMBOL VDSS VGSS ID IDM PD TJ TSTG RATINGS 30 ±20 6.9 30 2 +150 -55 ~ +150 UNIT V V A A W °С °С P-CHANNEL PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 2) ID -6 A Pulsed Drain Current (Note 2) IDM -30 A Power Dissipation PD 2 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface Mounted on 1in 2 pad area, t≤10sec THERMAL DATA PARAMETER Junction to Ambient (Note) Note: Surface Mounted on 1in 2 pad area, t≤10sec SYMBOL θJA UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 67 MAX 80 UNIT °С/W 3 of 10 QW-R211-021.B UD4606Q Power MOSFET ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) N-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage SYMBOL Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=250uA VDS=24V, VGS=0V VDS=0V, VGS=±20V 30 VGS(TH) VDS=VGS, ID=250uA VGS=10V, ID=6.9A VGS=4.5V, ID=5A 1 DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V,VDS=15V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) tD(ON) Turn-ON Rise Time tR VDS=15V, VGS=10V, RG=3Ω, RL=2.2Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note2) QG VDS=15V, VGS=10V, ID=6.9A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD IS=1A, VGS=0V Diode Continuous Forward Current (Note3) IS Reverse Recovery Time tRR IDS=6.9A, dI/dt=100A/μs Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 1.9 22.5 34.5 MAX UNIT 1 100 V uA nA 3 28 42 V mΩ mΩ 680 102 77 pF pF pF 4.6 4.1 20.6 5.2 13.8 1.82 3.2 ns ns ns ns nC nC nC 0.76 16.5 7.8 1 3 V A ns nC 4 of 10 QW-R211-021.B UD4606Q Power MOSFET LECTRICAL CHARACTERISTICS(Cont.) P-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note2) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=-250uA VDS=-24V, VGS=0V VDS=0V, VGS=±20V -30 VGS(TH) VDS=VGS, ID=-250uA VGS=-10V, ID=-6A VGS=-4.5V, ID=-5A -1.2 RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V,VDS=-15V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) tD(ON) Turn-ON Rise Time tR VDS=-15V, VGS=-10V, RG=3Ω, RL=2.7Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note2) QG VDS=-15V, VGS=-10V, ID=-6A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD IS=-1A, VGS=0V Diode Continuous Forward Current (Note3) IS Reverse Recovery Time tRR IDS=-6A, dI/dt=100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300µs, duty cycle ≤2%. 2 3. Surface Mounted on 1in pad area, t≤10sec. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP -2 37.5 44 MAX UNIT -1 ±100 V uA nA -2.4 45 58 V mΩ mΩ 920 190 122 pF pF pF 7.7 5.7 20.2 9.5 18.5 2.7 4.5 ns ns ns ns nC nC nC -0.76 20 8.8 -1 -4.2 V A ns nC 5 of 10 QW-R211-021.B UD4606Q Power MOSFET TYPICAL CHARACTERISTICS Drain Current,ID (A) Capacitance (pF) Drain to Source OnResistance,RDS(ON) (mΩ) Drain Current,ID (A) N-CHANNEL On-Resistance vs. Gate-Source Voltage 70 Body Diode Characteristics 1.0E+01 ID=5A 60 1.0E+00 50 1.0E-01 125℃ 40 1.0E-02 125℃ 1.0E-03 30 25℃ 20 10 2 4 6 8 10 Gate to Source Voltage,VGS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25℃ 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Body Diode Forward Voltage,VSD (V) 6 of 10 QW-R211-021.B UD4606Q Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Gate- Charge Characteristics 40 VDS=15V ID=6.9A 8 TJ(Max)=150℃ TA=25℃ 30 Power (W) Gate to Source Voltage,VGS (V) 10 Single Pulse Power Rating Junctionto-Ambient 6 4 20 10 2 0 0 4 6 8 10 Gate Charge,QG (nC) 12 0.001 14 0.01 0.1 1 10 Pulse Width (s) 100 1000 Normalized Transient Thermal Resistance,ZθJA 2 Drain Current,ID (A) 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 10 QW-R211-021.B UD4606Q Power MOSFET TYPICAL CHARACTERISTICS(Cont.) P-CHANNEL On-Region Characteristics -10V Drain Current,-ID (A) 25 -6V Transfer Characteristics 30 -4.5V VDS=-5V -5V 20 25 Drain Current,-ID (A) 30 -4V 15 10 -3.5V 5 VGS=-3V 20 15 10 125℃ 5 0 25℃ 0 0 1 2 3 4 Drain to Source Voltage,-VDS (V) 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Gate to Source Voltage,-VGS (V) On-Resistance vs. Drain Current and Gate Voltage 60 Capacitance Characteristics 1500 50 1250 VGS=-4.5V 45 Capacitance (pF) Drain to Source OnResistance,RDS(ON) (mΩ) 55 40 35 VGS=-10V 30 25 20 CISS 1000 750 500 COSS 250 15 CRSS 0 10 10 15 20 Drain Current,-ID (A) 0 25 5 10 15 20 30 25 Drain to Source Voltage,-VDS (V) Reverse Drain Current,-IS (A) 5 Drain to Source OnResistance,RDS(ON) (mΩ) 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 10 QW-R211-021.B UD4606Q Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Gate-Charge Characteristics 40 VDS=-15V ID=-6A 8 TJ(Max)=150℃ TA=25℃ 30 Power (W) Gate to Source Voltage,-VGS (V) 10 6 4 20 10 2 0 100.0 10.0 4 8 16 12 Gate Charge,-QG (nC) 100μs 1ms 10μs 10ms 1s DC 0.1 0.1 10s 1 0.1 10 Pulse Width (s) 100 1000 Normalized Maximum Transient Thermal Impedance Maximum Forward Biased Safe Operating Area TJ(Max)=150℃ RDS(ON) Limited TA=25℃ 0.1s 1.0 0 0.001 0.01 20 10 Normalized Transient Thermal Resistance,ZθJA 0 Drain Current,-ID (A) Single Pulse Power Rating Junctionto-Ambient 1 D=TON/T TJ,PK=TA+PDM.Z θJA.RθJA RθJA=62.5℃/W In descending order D=0.5,0.3,0.1,0.05,0. 02,0.01,single pulse PD 0.1 TON Single Pulse T 0.01 1 10 100 Drain to Source Voltage,-VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.000010.00010.001 0.01 0.1 1 10 100 1000 Pulse Width (s) 9 of 10 QW-R211-021.B UD4606Q Power MOSFET TYPICAL CHARACTERISTICS(Cont.) For N / P-CHANNEL Power Derating Power Derating (%) 100 60 20 0 0 50 100 150 Ambient Temperature, TA ( C) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 of 10 QW-R211-021.B