UNISONIC TECHNOLOGIES CO., LTD UD4606 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC UD4606 provides excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary MOSFETs may be help to form a level shifted high side switch and also for lots of other applications. DIP-8 FEATURES * N-Channel: 30V/6.9A SOP-8 RDS(ON) = 22.5 mΩ (typ.) @VGS =10V RDS(ON) = 34.5 mΩ (typ.) @VGS=4.5V * P-Channel: -30V/-6A RDS(ON) = 28 mΩ (typ.) @VGS= -10V RDS(ON) = 44 mΩ (typ.) @VGS= -4.5V * Reliable and rugged SYMBOL ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UD4606L-D08-T UD4606G-D08-T UD4606L-S08-R UD4606G-S08-R www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package DIP-8 SOP-8 Pin Assignment Packing 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D2 D2 D1 D1 Tube S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel 1 of 8 QW-R502-144.C UD4606 Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R502-144.C UD4606 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified) N-CHANNEL PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note2) Pulsed Drain Current (Note2) SYMBOL VDSS VGSS ID IDM DIP-8 SOP-8 Power Dissipation Junction Temperature Storage Temperature RATINGS 30 ±20 6.9 30 2.5 2 +150 -55 ~ +150 PD TJ TSTG UNIT V V A A W W °С °С P-CHANNEL PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 2) Pulsed Drain Current (Note 2) RATINGS UNIT -30 V ±20 V -6 A -30 A DIP-8 2.5 W Power Dissipation PD SOP-8 2 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface Mounted on 1in 2 pad area, t≤10sec SYMBOL VDSS VGSS ID IDM THERMAL DATA PARAMETER DIP-8 Junction to Ambient (Note) SOP-8 Note: Surface Mounted on 1in 2 pad area, t≤10sec UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA MIN TYP 74 67 MAX 110 80 UNIT °С/W °С/W 3 of 9 QW-R502-144.C UD4606 Power MOSFET ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) N-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage SYMBOL Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS MIN BVDSS IDSS IGSS VGS=0V, ID=250uA VDS=24V, VGS=0V VDS=0V, VGS=±20V 30 VGS(TH) VDS=VGS, ID=250uA VGS=10V, ID=6.9A VGS=4.5V, ID=5A 1 DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V,VDS=15V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) tD(ON) VDS=15V, VGS=10V, RG=3Ω, Turn-ON Rise Time tR RL=2.2Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note2) QG VDS=15V, VGS=10V, ID=6.9A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD IS=1A, VGS=0V Diode Continuous Forward Current (Note3) IS Reverse Recovery Time tRR IDS=6.9A, dI/dt=100A/μs Reverse Recovery Charge QRR TYP 1.9 22.5 34.5 MAX UNIT 1 100 V uA nA 3 28 42 V mΩ mΩ 680 102 77 pF pF pF 4.6 4.1 20.6 5.2 13.8 1.82 3.2 ns ns ns ns nC nC nC 0.76 1 3 V A ns nC 16.5 7.8 P-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note2) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall Time Total Gate Charge (Note2) Gate-Source Charge Gate-Drain Charge SYMBOL MIN BVDSS IDSS IGSS VGS=0V, ID=-250uA VDS=-24V, VGS=0V VDS=0V, VGS=±20V -30 VGS(TH) VDS=VGS, ID=-250uA VGS=-10V, ID=-6A VGS=-4.5V, ID=-5A -1.2 RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS VGS=0V,VDS=-15V,f=1.0MHz VDS=-15V, VGS=-10V, RG=3Ω, RL=2.7Ω VDS=-15V, VGS=-10V, ID=-6A TYP -2 28 44 MAX UNIT -1 ±100 V uA nA -2.4 35 58 V mΩ mΩ 920 190 122 pF pF pF 7.7 5.7 20.2 9.5 18.5 2.7 4.5 ns ns ns ns nC nC nC 4 of 9 QW-R502-144.C UD4606 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD IS=-1A, VGS=0V Diode Continuous Forward Current (Note3) IS Reverse Recovery Time tRR IDS=-6A, dI/dt=100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300µs, duty cycle ≤2%. 2 3. Surface Mounted on 1in pad area, t≤10sec. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -0.76 -1 -4.2 20 8.8 V A ns nC 5 of 9 QW-R502-144.C UD4606 Power MOSFET TYPICAL CHARACTERISTICS Drain Current,ID (A) Drain Current,ID (A) N-CHANNEL On-Resistance vs. Drain Current and Gate Voltage 60 Capacitance Characteristics 1000 f=1MHZ VGS=0V 900 50 800 700 VGS=4.5V 40 CISS 600 500 30 400 300 20 VGS=10V 200 COSS 100 10 0 10 15 Drain Current,ID (A) 20 0 5 25 10 15 20 Drain to Source Voltage,VDS (V) 30 Reverse Drain Current,IS (A) 5 Drain to Source OnResistance,RDS(ON) (mΩ) 0 CRSS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 9 QW-R502-144.C UD4606 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Gate- Charge Characteristics 40 VDS=15V ID=6.9A 8 TJ(Max)=150℃ TA=25℃ 30 Power (W) Gate to Source Voltage,VGS (V) 10 Single Pulse Power Rating Junctionto-Ambient 6 4 20 10 2 0 0 4 6 8 10 Gate Charge,QG (nC) 12 0.001 14 0.01 0.1 1 10 Pulse Width (s) 100 1000 Normalized Transient Thermal Resistance,ZθJA 2 Drain Current,ID (A) 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 9 QW-R502-144.C UD4606 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) P-CHANNEL On-Region Characteristics -10V Drain Current,-ID (A) 25 -6V Transfer Characteristics 30 -4.5V VDS=-5V -5V 20 25 Drain Current,-ID (A) 30 -4V 15 10 -3.5V 5 VGS=-3V 20 15 10 125℃ 5 0 25℃ 0 0 1 2 3 4 Drain to Source Voltage,-VDS (V) 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Gate to Source Voltage,-VGS (V) On-Resistance vs. Drain Current and Gate Voltage 60 Capacitance Characteristics 1500 50 1250 VGS=-4.5V 45 Capacitance (pF) Drain to Source OnResistance,RDS(ON) (mΩ) 55 40 35 VGS=-10V 30 25 20 CISS 1000 750 500 COSS 250 15 CRSS 0 10 10 15 20 Drain Current,-ID (A) 0 25 5 10 15 20 30 25 Drain to Source Voltage,-VDS (V) Reverse Drain Current,-IS (A) 5 Drain to Source OnResistance,RDS(ON) (mΩ) 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 9 QW-R502-144.C UD4606 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Gate-Charge Characteristics 40 VDS=-15V ID=-6A 8 TJ(Max)=150℃ TA=25℃ 30 Power (W) Gate to Source Voltage,-VGS (V) 10 6 4 20 10 2 0 100.0 10.0 4 8 16 12 Gate Charge,-QG (nC) 100μs 1ms 10μs 10ms 1s DC 0.1 0.1 10s 1 0.1 10 Pulse Width (s) 100 1000 Normalized Maximum Transient Thermal Impedance Maximum Forward Biased Safe Operating Area TJ(Max)=150℃ RDS(ON) Limited TA=25℃ 0.1s 1.0 0 0.001 0.01 20 10 Normalized Transient Thermal Resistance,ZθJA 0 Drain Current,-ID (A) Single Pulse Power Rating Junctionto-Ambient 1 D=TON/T TJ,PK=TA+PDM.Z θJA.RθJA RθJA=62.5℃/W In descending order D=0.5,0.3,0.1,0.05,0. 02,0.01,single pulse PD 0.1 TON Single Pulse T 0.01 1 10 100 Drain to Source Voltage,-VDS (V) 0.000010.00010.001 0.01 0.1 1 10 100 1000 Pulse Width (s) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 9 of 9 QW-R502-144.C