Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N70K-MT
Power MOSFET
2A, 700V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 2N70K-MT is a high voltage MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used at high
speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) < 5.5Ω@VGS = 10V , ID = 1.0 A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N70KL-TF3-T
2N70KG-TF3-T
2N70KL-TF1-T
2N70KG-TF1-T
2N70KL-TF2-T
2N70KG-TF2-T
2N70KL-TF3T-T
2N70KG-TF3T-T
2N70KL-TM3-T
2N70KG-TM3-T
2N70KL-TMS-T
2N70KG-TMS-T
2N70KL-TN3-R
2N70KG-TN3-R
2N70KL-TND-R
2N70KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
Package
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
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QW-R205-008.B
2N70K-MT

Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-008.B
2N70K-MT

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
2.0
A
Drain Current
Pulsed (Note 2)
IDM
8.0
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
100
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220F/TO-220F1
28
W
TO-220F3
PD
Power Dissipation
TO-220F2
29
W
TO-251/TO-251S
30
W
TO-252/TO-252D
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=50mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220F/TO-220F1/
TO-220F2/TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-252/TO-252D
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-252/TO-252D
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
RATINGS
UNIT
62.5
°C/W
110
°C/W
4.46
°C/W
4.35
°C/W
4.24
°C/W
θJA
θJC
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2N70K-MT
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS = 700V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature
△BVDSS/△TJ ID = 250 μA, Referenced to 25°C
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =25V, VGS =0V, f =1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
Turn-On Rise Time
tR
VDD=30V, ID =0.5A, RG =25Ω
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=50V, ID=1.3A, VGS=10V
Gate-Source Charge
QGS
(Note 1, 2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, ISD = 2.0 A
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
700
10
100
-100
0.4
3.0
V
μA
nA
nA
V/°С
5.0
5.5
V
Ω
258
31
4.6
pF
pF
pF
39.5
38.5
50
21
10.4
5.3
2.0
ns
ns
ns
ns
nC
nC
nC
1.4
2.0
8.0
V
A
A
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
90%
10%
tD(ON)
tD(OFF)
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
E AS =
Fig. 4A Unclamped Inductive Switching Test Circuit
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1
BVDSS
LI 2
2 AS BVDSS - VDD
Fig. 4B Unclamped Inductive Switching Waveforms
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2N70K-MT
Power MOSFET
Drain Current, ID (mA)
Continuous Drain-Source Current, ID (A)
Drain Current, ID (μA)
Drain Current, ID (μA)
TYPICAL CHARACTERISTICS

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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