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TC4451/TC4452
12A High-Speed MOSFET Drivers
Features
General Description
• High Peak Output Current: 13A (typ.)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Continuous Output Current: 2.6A (max.)
• Matched Fast Rise and Fall Times:
- 21 ns with 10,000 pF Load
- 42 ns with 22,000 pF Load
• Matched Short Propagation Delays: 44 ns (typ.)
• Low Supply Current:
- With Logic ‘1’ Input – 140 μA (typ.)
- With Logic ‘0’ Input – 40 μA (typ.)
• Low Output Impedance: 0.9Ω (typ.)
• Latch-Up Protected: Will Withstand 1.5A Output
Reverse Current
• Input Will Withstand Negative Inputs Up To 5V
• Pin-Compatible with the TC4420/TC4429,
TC4421/TC4422 and TC4421A/TC4422A
MOSFET Drivers
• Space-Saving, Thermally-Enhanced, 8-Pin DFN
Package
The TC4451/TC4452 are single-output MOSFET
drivers. These devices are high-current buffer/drivers
capable of driving large MOSFETs and Insulated Gate
Bipolar Transistors (IGBTs). The TC4451/TC4452 have
matched output rise and fall times, as well as matched
leading and falling-edge propagation delay times. The
TC4451/TC4452 devices also have very low crossconduction current, reducing the overall power
dissipation of the device.
Applications
With both surface-mount and pin-through-hole
packages, in addition to a wide operating temperature
range, the TC4451/TC4452 family of 12A MOSFET
drivers fit into most any application where high gate/line
capacitance drive is required.
•
•
•
•
•
•
Line Drivers for Extra Heavily-Loaded Lines
Pulse Generators
Driving the Largest MOSFETs and IGBTs
Local Power ON/OFF Switch
Motor and Solenoid Driver
LF Initiator
© 2006 Microchip Technology Inc.
These devices are essentially immune to any form of
upset, except direct overvoltage or over-dissipation.
They cannot be latched under any conditions within
their power and voltage ratings. These parts are not
subject to damage or improper operation when up to
5V of ground bounce is present on their ground
terminals. They can accept, without damage or logic
upset, more than 1.5A inductive current of either
polarity being forced back into their outputs. In addition,
all terminals are fully protected against up to 4 kV of
electrostatic discharge.
The TC4451/TC4452 inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300 mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slowly rising or falling waveforms.
DS21987A-page 1
TC4451/TC4452
Package Types(1)
8-Pin DFN(2)
VDD
INPUT
NC
GND
1
8 VDD
2 TC4451 7 OUTPUT
3 TC4452 6 OUTPUT
4
5 GND
VDD
OUTPUT
OUTPUT
GND
VDD 1
INPUT 2
NC 3
TC4451
TC4452
GND 4
TC4451 TC4452
5-Pin TO-220
Tab is
Common
to VDD
VDD
8
VDD
7
OUTPUT OUTPUT
6
OUTPUT OUTPUT
5
GND
GND
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is electrically isolated.
TC4451
TC4452
INPUT
GND
VDD
GND
OUTPUT
8-Pin
TC4451 TC4452
PDIP/SOIC
Functional Block Diagram
VDD
TC4451
Inverting
140 μA
300 mV
Cross-Conduction
Reduction and Pre-Drive
Circuitry
Output
Output
TC4452
Non-Inverting
Input
4.7V
GND
Effective
Input
C = 25 pF
DS21987A-page 2
© 2006 Microchip Technology Inc.
TC4451/TC4452
1.0
ELECTRICAL
CHARACTERISTICS
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings †
Supply Voltage ..................................................... +20V
Input Voltage .................... (VDD + 0.3V) to (GND – 5V)
Input Current (VIN > VDD)................................... 50 mA
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
V
Conditions
Input
Logic ‘1’, High Input Voltage
VIH
2.4
1.5
—
Logic ‘0’, Low Input Voltage
VIL
—
1.3
0.8
V
Input Current
IIN
–10
—
+10
μA
Input Voltage
VIN
–5
—
VDD + 0.3
V
VOH
VDD – 0.025
—
—
V
DC Test
Low Output Voltage
VOL
—
—
0.025
V
DC Test
Output Resistance, High
ROH
—
1.0
1.5
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
0.9
1.5
Ω
IOUT = 10 mA, VDD = 18V
0V ≤ VIN ≤ VDD
Output
High Output Voltage
Peak Output Current
IPK
—
13
—
A
VDD = 18V
Continuous Output Current
IDC
2.6
—
—
A
10V ≤ VDD ≤ 18V (Note 2, Note 3)
Latch-Up Protection
Withstand Reverse Current
IREV
—
>1.5
—
A
Duty cycle ≤ 2%, t ≤ 300 μs
Rise Time
tR
—
30
40
ns
Figure 4-1, CL = 15,000 pF
Fall Time
tF
—
32
40
ns
Figure 4-1, CL = 15,000 pF
Propagation Delay Time
tD1
—
44
52
ns
Figure 4-1, CL = 15,000 pF
Propagation Delay Time
tD2
—
44
52
ns
Figure 4-1, CL = 15,000 pF
IS
—
140
200
μA
VIN = 3V
—
40
100
μA
VIN = 0V
VDD
4.5
—
18.0
V
Switching Time (Note 1)
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
2:
Switching times ensured by design.
Tested during characterization, not production tested.
3: Valid for AT and MF packages only. TA = +25°C.
© 2006 Microchip Technology Inc.
DS21987A-page 3
TC4451/TC4452
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
VIH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
VIL
—
—
0.8
V
Input Current
IIN
–10
—
+10
μA
High Output Voltage
VOH
VDD – 0.025
—
—
V
DC Test
Low Output Voltage
VOL
—
—
0.025
V
DC Test
Output Resistance, High
ROH
—
—
2.2
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
—
2.0
Ω
IOUT = 10 mA, VDD = 18V
tR
—
35
60
ns
Figure 4-1, CL = 15,000 pF
Fall Time
tF
—
38
60
ns
Figure 4-1, CL = 15,000 pF
Propagation Delay Time
tD1
—
55
65
ns
Figure 4-1, CL = 15,000 pF
Propagation Delay Time
tD2
—
55
65
ns
Figure 4-1, CL = 15,000 pF
IS
—
200
400
μA
VIN = 3V
—
50
150
μA
VIN = 0V
4.5
—
18.0
V
0V ≤ VIN ≤ VDD
Output
Switching Time (Note 1)
Rise Time
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
VDD
Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
TA
–40
—
+125
°C
Conditions
Temperature Ranges
Specified Temperature Range (V)
Maximum Junction Temperature
TJ
—
—
+150
°C
Storage Temperature Range
TA
–65
—
+150
°C
Package Thermal Resistances
Thermal Resistance, 5L-TO-220
θJA
—
71
—
°C/W
Without heat sink
Thermal Resistance, 8L-6x5 DFN
θJA
—
33.2
—
°C/W
Typical 4-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP
θJA
—
125
—
°C/W
Thermal Resistance, 8L-SOIC
θJA
—
155
—
°C/W
DS21987A-page 4
© 2006 Microchip Technology Inc.
TC4451/TC4452
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
300
220
200
180
160
140
120
100
80
60
40
20
0
47,000 pF
250
Fall Time (ns)
Rise Time (ns)
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
22,000 pF
10V
150
100
18V
50
10,000 pF
4
5V
200
6
8
10
12
14
16
0
100
18
1000
Supply Voltage (V)
FIGURE 2-1:
Voltage.
FIGURE 2-4:
Load.
300
Rise Time (ns)
Rise and Fall Times (ns)
40
250
5V
10V
150
100
18V
50
Fall Time vs. Capacitive
VDD = 18V
tRISE
30
tFALL
20
10
0
0
100
1000
10000
-40
100000
-25
-10
5
20
Rise Time vs. Capacitive
FIGURE 2-5:
Temperature.
Crossover Energy (A·sec)
Fall Time (ns)
FIGURE 2-2:
Load.
47,000 pF
22,000 pF
10,000 pF
4
6
50
65
80
95
110 125
Rise and Fall Times vs.
-7
1E-07
10
-8
1E-08
10
-9
1E-09
10
8
10
12
14
16
18
4
6
Fall Time vs. Supply
© 2006 Microchip Technology Inc.
8
10
12
14
16
18
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-3:
Voltage.
35
Temperature (°C)
Capacitive Load (pF)
220
200
180
160
140
120
100
80
60
40
20
0
100000
Capacitive Load (pF)
Rise Time vs. Supply
200
10000
FIGURE 2-6:
Supply Voltage.
Crossover Energy vs.
DS21987A-page 5
TC4451/TC4452
95
90
85
80
75
70
65
60
55
50
45
40
140
CLOAD = 15,000 pF
VIN = 5V
120
IQUIESCENT (μA)
Propagation Delay (ns)
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
tD2
INPUT = High
100
80
60
INPUT = Low
40
tD1
20
4
6
8
10
12
14
16
18
4
6
8
Supply Voltage (V)
Propagation Delay vs.
100
95
90
85
80
75
70
65
60
55
50
45
40
CLOAD = 15,000 pF
VDD = 10V
tD2
tD1
2
3
4
5
6
7
8
9
220
200
180
160
140
120
100
80
60
40
20
10
55
Propagation Delay vs. Input
50
45
35
tD2
tD1
30
-40 -25 -10
5
20
35
50
65
INPUT = Low
FIGURE 2-11:
vs. Temperature.
80
95 110 125
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
Propagation Delay vs.
Quiescent Supply Current
VIH
VIL
-40 -25 -10
Temperature ( C)
DS21987A-page 6
20 35 50 65 80 95 110 125
VDD = 12 V
o
FIGURE 2-9:
Temperature.
18
Temperature (oC)
VDD = 10V
VIN = 5V
CLOAD = 15,000 pF
40
16
INPUT = High
-40 -25 -10 5
Input Threshold (V)
Propagation Delay (ns)
60
14
VDD = 18 V
Input Amplitude (V)
FIGURE 2-8:
Amplitude.
12
FIGURE 2-10:
Quiescent Supply Current
vs. Supply Voltage.
IQUIESCENT (μA)
Propagation Delay (ns)
FIGURE 2-7:
Supply Voltage.
10
Supply Voltage (V)
5
20 35 50 65 80 95 110 125
Temperature (oC)
FIGURE 2-12:
Temperature.
Input Threshold vs.
© 2006 Microchip Technology Inc.
TC4451/TC4452
300
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
Supply Current (mA)
Input Threshold (V)
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
VIH
VIL
4
6
8
10
12
14
16
VDD = 18 V
200
150
100
100 kHz
2 MHz
1 MHz
Supply Voltage (V)
FIGURE 2-13:
Voltage.
Supply Current (mA)
ROUT-HI (Ω)
3.0
2.5
2.0
TJ = 125oC
1.5
1.0
o
TJ = 25 C
0.5
0.0
4
6
8
10
12
14
16
VDD = 12 V
200 kHz
150
100
100 kHz
2 MHz
10 kHz
Supply Current (mA)
ROUT-LO (Ω)
155
o
1.5
TJ = 125 C
1.0
0.5
o
TJ = 25 C
0.0
10
12
14
Supply Voltage (V)
FIGURE 2-15:
Low-State Output
Resistance vs. Supply Voltage.
© 2006 Microchip Technology Inc.
1,000
10,000
100,000
FIGURE 2-17:
Supply Current vs.
Capacitive Load (VDD = 12V).
2.0
8
50 kHz
50
175
6
1 MHz
Capacitive Load (pF)
VIN = 0V (TC4452)
VIN = 5V (TC4451)
4
100,000
200
0
100
18
FIGURE 2-14:
High-State Output
Resistance vs. Supply Voltage.
2.5
10,000
250
Supply Voltage (V)
3.0
1,000
FIGURE 2-16:
Supply Current vs.
Capacitive Load (VDD = 18V).
300
VIN = 5V (TC4452)
VIN = 0V (TC4451)
3.5
10 kHz
Capacitive Load (pF)
Input Threshold vs. Supply
4.0
50 kHz
50
0
100
18
200 kHz
250
16
18
VDD = 6 V
2 MHz
1 MHz
135
115
200 kHz
95
100 kHz
75
55
50 kHz
35
10 kHz
15
-5
100
1,000
10,000
100,000
Capacitive Load (pF)
FIGURE 2-18:
Supply Current vs.
Capacitive Load (VDD = 6V).
DS21987A-page 7
TC4451/TC4452
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
250
VDD = 18 V
15,000 pF
200
10,000 pF
22,000 pF
150
1,000 pF
47,000 pF
100
0.1 μF
470 pF
50
0
VDD = 6 V
200
15,000 pF
150
22,000 pF
100
10,000 pF
47,000 pF
50
1,000 pF
0.1 μF
470 pF
0
10
100
1000
10000
Frequency (kHz)
250
10
100
1000
10000
Frequency (kHz)
FIGURE 2-21:
Supply Current vs.
Frequency (VDD = 6V).
FIGURE 2-19:
Supply Current vs.
Frequency (VDD = 18V).
Supply Current (mA)
Supply Current (mA)
Supply Current (mA)
250
VDD = 12 V
15,000 pF
200
150
22,000 pF
100
10,000 pF
47,000 pF
1,000 pF
0.1 μF
50
470 pF
0
10
100
1000
10000
Frequency (kHz)
FIGURE 2-20:
Supply Current vs.
Frequency (VDD = 12V).
DS21987A-page 8
© 2006 Microchip Technology Inc.
TC4451/TC4452
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
8-Pin PDIP,
SOIC
Pin No.
8-Pin DFN
Pin No.
5-Pin TO-220
1
1
—
VDD
2
2
1
INPUT
3
3
—
NC
4
4
2
GND
Ground
5
5
4
GND
Ground
6
6
5
OUTPUT
7
7
—
OUTPUT
8
8
3
VDD
Supply input, 4.5V to 18V
—
PAD
—
NC
Exposed metal pad
—
—
TAB
VDD
Metal tab is at the VDD potential
3.1
Symbol
Supply Input (VDD)
The VDD input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The VDD input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A minimum value of 1.0 μF is suggested.
3.2
Control Input
The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.3
CMOS Push-Pull Output
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output capable of driving a
capacitive load with 12A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.
© 2006 Microchip Technology Inc.
Description
Supply input, 4.5V to 18V
Control input, TTL/CMOS-compatible input
No connection
CMOS push-pull output
CMOS push-pull output
3.4
Ground
The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.
3.5
Exposed Metal Pad
The exposed metal pad of the 6x5 DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a Printed Circuit Board (PCB) to aid in
heat removal from the package.
3.6
Metal Tab
The metal tab of the TO-220 package is connected to
the VDD potential of the device. This connection to VDD
can be used as a current carrying path for the device.
DS21987A-page 9
TC4451/TC4452
4.0
APPLICATIONS INFORMATION
+5V
90%
Input
VDD = 18V
0.1 μF
0V
0.1 μF
4.7 μF
2 Input
Output 6
Output 7
GND
4
+18V
tD1
tD2
tF
tR
90%
90%
Output
1
8
VDD VDD
Input
10%
Inverting Driver
Output
CL = 15,000 pF
GND
5
TC4451
+5V
90%
Input
0V
+18V
Input: 100 kHz,
square wave,
tRISE = tFALL ≤ 10 ns
10%
10%
0V
10%
tD1 90%
tR
Output
0V
10%
tD2
90%
tF
10%
Non-Inverting Driver
Note: Pinout shown is for the DFN, PDIP and SOIC packages.
FIGURE 4-1:
DS21987A-page 10
TC4452
Switching Time Test Circuits.
© 2006 Microchip Technology Inc.
TC4451/TC4452
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
5-Lead TO-220
XXXXXXXXX
XXXXXXXXX
YYWWNNN
8-Lead DFN-S
XXXXXXX
XXXXXXX
XXYYWW
NNN
XXXXXXXX
XXXXXNNN
YYWW
8-Lead SOIC (150 mil)
XXXXXXXX
XXXXYYWW
NNN
e3
*
Note:
TC4451
XXXXXXXXX
e3
VAT^^
0649256
Example:
TC4451
VMF^e3
0649
256
8-Lead PDIP (300 mil)
Legend: XX...X
Y
YY
WW
NNN
Example:
Example:
TC4451V
e3 256
PA^^
0649
Example:
TC4451V
OA e^^3 0649
256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2006 Microchip Technology Inc.
DS21987A-page 11
TC4451/TC4452
5-Lead Plastic Transistor Outline (AT) (TO-220)
L
H1
Q
β
e3
e1
E
e
EJECTOR PIN
ØP
α (5°)
C1
A
J1
F
D
Units
Dimension Limits
MILLIMETERS
INCHES*
MIN
MAX
MIN
MAX
Lead Pitch
e
.060
.072
1.52
1.83
Overall Lead Centers
e1
.263
.273
6.68
6.93
Space Between Leads
e3
.030
.040
0.76
1.02
Overall Height
A
.160
.190
4.06
4.83
Overall Width
E
.385
.415
9.78
10.54
Overall Length
D
.560
.590
14.22
14.99
Flag Length
H1
.234
.258
5.94
6.55
Flag Thickness
F
.045
.055
1.14
1.40
Through Hole Center
Q
.103
.113
2.62
2.87
Through Hole Diameter
P
.146
.156
3.71
3.96
Lead Length
L
.540
.560
13.72
14.22
Base to Bottom of Lead
J1
.090
.115
2.29
2.92
Lead Thickness
C1
.014
.022
0.36
0.56
Lead Width
β
.025
.040
0.64
1.02
Mold Draft Angle
α
3°
7°
3°
7°
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254 mm) per side.
JEDEC equivalent: TO-220
Drawing No. C04-036
Revised 08-01-05
DS21987A-page 12
© 2006 Microchip Technology Inc.
TC4451/TC4452
8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated
© 2006 Microchip Technology Inc.
DS21987A-page 13
TC4451/TC4452
8-Lead Plastic Dual In-line (PA) – 300 mil (PDIP)
E1
D
2
n
1
α
E
A2
A
L
c
A1
β
B1
p
eB
B
Units
Dimension Limits
n
p
Number of Pins
Pitch
Top to Seating Plane
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
L
c
§
B1
B
eB
α
β
MIN
.140
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
5
INCHES*
NOM
MAX
8
.100
.155
.130
.170
.145
.313
.250
.373
.130
.012
.058
.018
.370
10
10
.325
.260
.385
.135
.015
.070
.022
.430
15
15
MILLIMETERS
NOM
8
2.54
3.56
3.94
2.92
3.30
0.38
7.62
7.94
6.10
6.35
9.14
9.46
3.18
3.30
0.20
0.29
1.14
1.46
0.36
0.46
7.87
9.40
5
10
5
10
MIN
MAX
4.32
3.68
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
DS21987A-page 14
© 2006 Microchip Technology Inc.
TC4451/TC4452
8-Lead Plastic Small Outline (OA) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
n
1
h
α
45°
c
A2
A
φ
β
L
Units
Dimension Limits
n
p
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
h
L
φ
c
B
α
β
MIN
.053
.052
.004
.228
.146
.189
.010
.019
0
.008
.013
0
0
A1
INCHES*
NOM
8
.050
.061
.056
.007
.237
.154
.193
.015
.025
4
.009
.017
12
12
MAX
.069
.061
.010
.244
.157
.197
.020
.030
8
.010
.020
15
15
MILLIMETERS
NOM
8
1.27
1.35
1.55
1.32
1.42
0.10
0.18
5.79
6.02
3.71
3.91
4.80
4.90
0.25
0.38
0.48
0.62
0
4
0.20
0.23
0.33
0.42
0
12
0
12
MIN
MAX
1.75
1.55
0.25
6.20
3.99
5.00
0.51
0.76
8
0.25
0.51
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
© 2006 Microchip Technology Inc.
DS21987A-page 15
TC4451/TC4452
NOTES:
DS21987A-page 16
© 2006 Microchip Technology Inc.
TC4451/TC4452
APPENDIX A:
REVISION HISTORY
Revision A (February 2006)
• Original Release of this Document.
© 2006 Microchip Technology Inc.
DS21987A-page 17
TC4451/TC4452
NOTES:
DS21987A-page 18
© 2006 Microchip Technology Inc.
TC4451/TC4452
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
Temperature
Range
Device:
XX
XXX
Package
Tape & Reel
TC4451:
TC4452:
12A High-Speed MOSFET Driver, Inverting
12A High-Speed MOSFET Driver, Non-Inverting
Temperature Range:
V
Package: *
AT
= TO-220, 5-lead
MF
= Dual, Flat, No-Lead (6x5 mm Body), 8-lead
MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
(Tape and Reel)
PA
= Plastic DIP (300 mil Body), 8-lead
OA
= Plastic SOIC (150 mil Body), 8-lead
OA713 = Plastic SOIC (150 mil Body), 8-lead
(Tape and Reel)
Examples:
a)
TC4451VAT:
12A High-Speed Inverting
MOSFET Driver,
TO-220 package
b)
TC4451VOA:
12A High-Speed Inverting
MOSFET Driver,
SOIC package
c)
TC4451VMF:
12A High-Speed Inverting
MOSFET Driver,
DFN package
a)
TC4452VPA:
12A High-Speed
Non-Inverting MOSFET
Driver, PDIP package
b)
TC4452VOA:
12A High-Speed
Non-Inverting
MOSFET Driver,
SOIC package
c)
TC4452VMF:
12A High-Speed
Non-Inverting MOSFET
Driver, DFN package
= -40°C to +125°C
*All package offerings are Pb Free (Lead Free).
© 2006 Microchip Technology Inc.
DS21987A-page 19
TC4451/TC4452
NOTES:
DS21987A-page 20
© 2006 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION, INCLUDING BUT NOT
LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,
MERCHANTABILITY OR FITNESS FOR PURPOSE.
Microchip disclaims all liability arising from this information and
its use. Use of Microchip devices in life support and/or safety
applications is entirely at the buyer’s risk, and the buyer agrees
to defend, indemnify and hold harmless Microchip from any and
all damages, claims, suits, or expenses resulting from such
use. No licenses are conveyed, implicitly or otherwise, under
any Microchip intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART,
PRO MATE, PowerSmart, rfPIC, and SmartShunt are
registered trademarks of Microchip Technology Incorporated
in the U.S.A. and other countries.
AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB,
PICMASTER, SEEVAL, SmartSensor and The Embedded
Control Solutions Company are registered trademarks of
Microchip Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial
Programming, ICSP, ICEPIC, Linear Active Thermistor,
MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM,
PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo,
PowerMate, PowerTool, Real ICE, rfLAB, rfPICDEM, Select
Mode, Smart Serial, SmartTel, Total Endurance, UNI/O,
WiperLock and Zena are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2006, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company’s quality system processes and
procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2006 Microchip Technology Inc.
DS21987A-page 21
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
India - Bangalore
Tel: 91-80-2229-0061
Fax: 91-80-2229-0062
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
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Tel: 91-11-5160-8631
Fax: 91-11-5160-8632
Austria - Wels
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
China - Chengdu
Tel: 86-28-8676-6200
Fax: 86-28-8676-6599
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Fax: 91-20-2566-1513
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Tel: 34-91-708-08-90
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Tel: 65-6334-8870
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10/31/05
DS21987A-page 22
© 2006 Microchip Technology Inc.
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