Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT9435-H
Preliminary
Power MOSFET
P-CHANNEL
ENHANCEMENT MODE

DESCRIPTION
The UT9435-H is P-Channel Power MOSFET, designed with
high density cell with fast switching speed, ultra low
on-resistance, and excellent thermal and electrical capabilities.
Used in commercial and industrial surface mount applications
and suited for low voltage applications such as DC/DC
converters.

SYMBOL
Drain
Gate
Source

ORDERING INFORMATION
Ordering Number
Note:

UT9435G-K06B-2020-R
Pin Assignment: G: Gate
Package
DFN-6B(2×2)
D: Drain
S: Source
1
D
2
D
Pin Assignment
3
4
5
6
G
S
D
D
7
D
8
S
Packing
Tape Reel
MARKING
435H
Date Code
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UT9435-H

Preliminary
Power MOSFET
PIN CONFIGURATION
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
-4.2
A
Pulsed Drain Current (Note 1, 2)
IDM
-20
A
Power Dissipation (TA=25°C)
PD
1.38
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
SYMBOL
Junction to Ambient
θJA
Note: Surface mounted on 1 in 2 copper pad of FR4 board, t ≤10s.

RATINGS
90
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
SYMBOL
TEST CONDITIONS
MIN
BVDSS
IDSS
IGSS
∆BVDSS/∆TJ
VGS =0 V, ID =-250 uA
VDS=-30V, VGS=0V
VGS= ±20V
Reference to 25℃, ID=-1mA
-30
-1
Static Drain-Source On-Resistance (Note 2)
RDS(ON)
VDS=VGS, ID=-250uA
VGS=-10V, ID=-4A
VGS=-4.5V, ID=-2A
VGS(TH)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=-25V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
Turn-ON Rise Time
tR
VDS=-15V,ID=-1A, RG=3.3Ω,
V
Turn-OFF Delay Time
tD(OFF)
GS=-10V,RD=15Ω
Turn-OFF Fall Time
tF
Total Gate Charge (Note 2)
QG
VDS=-25V, VGS=-4.5V, ID=-4A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=-1A, VGS=0V
Reverse Recovery Time
tRR
IS=-4A, VGS=0V,
dI/dt=-100A/μs
Reverse Recovery Charge
QRR
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300µs , duty cycle ≤2%.
UNISONIC TECHNOLOGIES CO., LTD
TYP MAX UNIT
-1
±100
V
uA
nA
V/℃
-3
50
90
V
mΩ
mΩ
520
180
130
830
pF
pF
pF
10
7
26
14
10
2
6
48
40
292
112
16
ns
ns
ns
ns
nC
nC
nC
-1.3
V
ns
nC
-0.1
30
24
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UT9435-H
Preliminary
UNISONIC TECHNOLOGIES CO., LTD
Power MOSFET
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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