UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SYMBOL 2.Drain Lead-free: UT9435L Halogen-free: UT9435G 1.Gate 3.Source ORDERING INFORMATION Normal UT9435-AB3-R UT9435-TN3-R UT9435-S08-R Ordering Number Lead Free Plating UT9435L-AB3-R UT9435L-TN3-R UT9435L-S08-R Halogen Free UT9435G-AB3-R UT9435G-TN3-R UT9435G-S08-R www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd Package SOT-89 TO-252 SOP-8 1 G G S 2 D D S Pin Assignment Packing 3 4 5 6 7 8 S - - - - - Tape Reel S - - - - - Tape Reel S G D D D D Tape Reel 1 of 4 QW-R502-155.C UT9435 Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-155.C UT9435 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25℃) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1, 2) RATINGS UNIT -30 V ±20 V -4.2 A -20 A SOT-89 1.25 Power Dissipation (Ta=25℃) PD W SOP-8 2.5 Power Dissipation (Tc=25℃) TO-252 PD 12.5 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS ID IDM THERMAL DATA PARAMETER Junction to Ambient (Note 3) SYMBOL SOT-89 TO-252 SOP-8 θJA RATINGS 100 110 50 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS IGSS ΔBVDSS/ΔTJ VGS =0 V, ID =-250 uA VDS=-30V, VGS=0V VGS= ±20V Reference to 25℃, ID=-1mA -30 V -1 uA ±100 nA V/℃ -1 Static Drain-Source On-Resistance (Note 2) RDS(ON) VDS=VGS, ID=-250uA VGS=-10V, ID=-4A VGS=-4.5V, ID=-2A VGS(TH) DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V,VDS=-25V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge (Note 2) QG VDS=-25V, VGS=-4.5V, ID=-4A Gate-Source Charge QGS Gate-Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) Turn-ON Rise Time tR VDS=-15V,ID=-1A, RG=3.3Ω, VGS=-10V,RD=15Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=-1A, VGS=0V IS=-4A, VGS=0V, Reverse Recovery Time tRR dI/dt=-100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300µs , duty cycle ≤2%. 3. Surface mounted on 1 in 2 copper pad of FR4 board, t≤10s. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw -0.1 -3 50 90 V mΩ mΩ 520 180 130 830 pF pF pF 10 2 6 10 7 26 14 16 nC nC nC ns ns ns ns 48 40 292 112 -1.3 30 24 V ns nC 3 of 4 QW-R502-155.C UT9435 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage 1.2 Drain-Source On-State Resistance Characteristics 6 1.0 5 0.8 4 0.6 3 0.4 2 0.2 0 VGS=-10V, ID=-4A VGS=-4.5V, ID=-2A 1 0 0.2 0.4 0.6 0.8 Source to Drain Voltage, VSD (V) 1.0 0 0 450 400 250 350 300 200 250 150 200 150 100 100 50 0 200 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 150 50 100 Drain to Source Voltage, VDS (mV) 50 0 0.5 1.0 1.5 Gate Threshold Voltage, VTH (V) 2.0 0 0 20 30 50 40 10 Drain-Source Breakdown Voltage, BVDSS(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-155.C