Datasheet

UNISONIC TECHNOLOGIES CO., LTD
18N65
Power MOSFET
18A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 18N65 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.

FEATURES
* RDS(ON) ≤ 0.5Ω @VGS = 10 V
* Ultra Low Gate Charge ( Typical 50nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 23pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
18N65L-T3P-T
18N65G-T3P-T
18N65L-T47-T
18N65G-T47-T
18N65L-TC3-T
18N65G-TC3-T
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-3P
TO-247
TO-230
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
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QW-R502-771.D
18N65

Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
(TC =25°С, unless otherwise specified)
RATINGS
UNIT
650
V
±30
V
18
A
45
A
18
A
1000 (Note 2)
Single Pulsed
mJ
Avalanche Energy
Repetitive
30
Peak Diode Recovery dv/dt
10
V/ns
TO-3P
390
W
Power Dissipation
TO-247
PD
357
W
TO-230
360
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=6.18mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ=25°С

SYMBOL
VDSS
VGSS
ID
IDM
IAR
EAS
EAR
dv/dt
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-3P
TO-247
TO-230
TO-3P
TO-247
TO-230
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
30
40
62.5
0.32
0.35
0.5
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
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18N65

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=650V, VGS=0V
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=9A (Note)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS=10V, VDS=0.5VDSS,
ID=18A, RG=5Ω (External)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VGS=10V, VDS=0.8VDSS,
Gate Source Charge
QGS
ID=18A
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IF=IS ,VGS=0V (Note )
Maximum Continuous Drain-Source
IS
VGS=0V
Diode Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Repetitive
Forward Current
Reverse Recovery Time
trr
VGS=0V, dIF/dt=100A/µs,
IS=18A, VR=100V
Reverse Recovery Charge
QRR
Note: Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
650
2.0
0.36
25
±100
V
µA
nA
4.0
0.5
V
Ω
2500
280
23
pF
pF
pF
21
60
62
60
50
15
18
ns
ns
ns
ns
nC
nC
nC
0.8
1.5
V
18
A
54
A
200
ns
µC
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18N65
Power MOSFET
TYPICAL CHARACTERISTICS

Drain-Source On-State
Resistance Characteristics
Drain Current vs. Source to Drain Voltage
24
12
VGS=10V,
ID=9.0A
10
Drain Current, ID (A)
Drain Current,ID (A)
20
16
12
8
4
8
6
4
2
0
0
200
400
600
800
Source to Drain Voltage,VSD (mV)
0
1000
0
1
2
3
Drain to Source Voltage, VDS (V)
4
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
400
250
Drain Current,ID (µA)
Drain Current,ID (μA)
350
200
150
100
50
0
300
250
200
150
100
50
0
1
2
3
4
Gate Threshold Voltage,VTH (V)
0
0
200
1000
600
800
400
Drain-Source Breakdown Voltage,BVDSS(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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