UNISONIC TECHNOLOGIES CO., LTD 60N15 Preliminary Power MOSFET 60A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N15 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 60N15 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc. FEATURES * RDS(ON)<30mΩ @ VGS=10V,ID=30A * High Switching Speed * High Current Capacity * Low Gate Charge(typical 130nC) SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 60N15L-T47-T 60N15G- T47-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-247 1 G Pin Assignment 2 3 D S Packing Tube 1 of 3 QW-R502-816.a 60N15 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0) VDSS 150 V Gate-Source Voltage VGSS ±20 V 60 A Continuous ID Drain Current Pulsed (Note 1) IDM 240 A Avalanche Current IAR 60 A Avalanche Energy EAS 1000 mJ Power Dissipation PD 125 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 1 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=150V, VGS=0V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=30A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDD=75V, ID=60A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=60A, RG=4.7Ω, VGS=10V Fall-Time tF Off-Voltage Rise Time tR(OFF) SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS (Note 1) Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD ISD=60A, VGS=0V (Note 2) Notes: 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration=300µs, Duty cycle 1.5% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 150 2 3 1 +100 -100 V µA nA nA 4 30 V mΩ 3900 950 250 130 26 55 30 180 35 135 pF pF pF 170 nC nC nC ns ns ns ns 60 240 1.6 A A V 2 of 3 QW-R502-816.a 60N15 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-816.a