Datasheet

UNISONIC TECHNOLOGIES CO., LTD
60N15
Preliminary
Power MOSFET
60A, 150V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 60N15 is an N-channel power MOSFET using UTC’s
advanced technology to provide the customers with perfect RDS(ON),
high switching speed, high current capacity and low gate charge.
The UTC 60N15 is suitable for motor control, AC-DC or DC-DC
converters and audio amplifiers, etc.
„
FEATURES
* RDS(ON)<30mΩ @ VGS=10V,ID=30A
* High Switching Speed
* High Current Capacity
* Low Gate Charge(typical 130nC)
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
60N15L-T47-T
60N15G- T47-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-247
1
G
Pin Assignment
2
3
D
S
Packing
Tube
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QW-R502-816.a
60N15
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0)
VDSS
150
V
Gate-Source Voltage
VGSS
±20
V
60
A
Continuous
ID
Drain Current
Pulsed (Note 1)
IDM
240
A
Avalanche Current
IAR
60
A
Avalanche Energy
EAS
1000
mJ
Power Dissipation
PD
125
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
62.5
1
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=150V, VGS=0V
Forward
VGS=+20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDD=75V, ID=60A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=60A, RG=4.7Ω,
VGS=10V
Fall-Time
tF
Off-Voltage Rise Time
tR(OFF)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
(Note 1)
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
ISD=60A, VGS=0V (Note 2)
Notes: 1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration=300µs, Duty cycle 1.5%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
150
2
3
1
+100
-100
V
µA
nA
nA
4
30
V
mΩ
3900
950
250
130
26
55
30
180
35
135
pF
pF
pF
170
nC
nC
nC
ns
ns
ns
ns
60
240
1.6
A
A
V
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QW-R502-816.a
60N15
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-816.a
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