Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT30N03
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
„
FEATURES
* RDS(ON) = 30mΩ @VGS = 10 V
* Low Capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT30N03L-TF3-T
UT30N03G-TF3-T
UT30N03L-TN3-R
UT30N03G-TN3-R
UT30N03L-TN3-T
UT30N03G-TN3-T
www.unisonic.com.tw
Copyright © 2013Unisonic Technologies Co., Ltd
Package
TO-220F
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tape Reel
Tube
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QW-R502-140.C
UT30N03
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Energy
RATINGS
UNIT
30
V
±20
V
30
A
40
A
90
mJ
TO-220F
47
W
Power Dissipation
PD
TO-252
42
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied
„
SYMBOL
VDS
VGS
ID
IDM
EAS
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
„
SYMBOL
TO-220F
TO-252
TO-220F
TO-252
θJA
θJC
RATINGS
62.5
110
2.66
3.0
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 μA
Drain-Source Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
Gate-Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 15 A
Static Drain-Source On-State Resistance
RDS(ON)
(Note2)
VGS = 4.5 V, ID = 12.5 A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
VDS = 25 V, VGS = 0 V, f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 15V, ID ≒ 30A, RL = 0.5Ω,
Turn-On Rise Time
tR
VGS=10V, RG=7.5Ω
Turn-Off Delay Time
tD(OFF)
(Note 4, 5)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS= 15V, ID= 30A, VGS= 10 V
Gate-Source Charge
QGS
(Note 4, 5)
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IF = 30A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
IF=30A, dIF/dt=100A/μs
Notes: 1. Guaranteed by design, not subject to production testing.
2. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
3. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
30
1
±100
V
μA
nA
30
45
V
mΩ
mΩ
1.0
20
30
1170
320
60
10
10
25
15
18
5.5
2
1.1
50
pF
pF
pF
20
20
40
30
35
ns
ns
ns
ns
nC
nC
nC
1.5
V
30
A
40
A
100
ns
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QW-R502-140.C
UT30N03
Power MOSFET
TYPICAL CHARACTERISTICS
„
Output Characteristics
40
Transfer Characteristics
40
VGS=10,9,8,7,6,5V
32
Drain Current, ID(A)
Drain Current, ID (A)
32
24
4V
16
24
16
8
TC=150℃
8
25℃
-55℃
3V
0
0
5
0
1
2
3
4
5
Gate-to-Source Voltage, VGS(V)
6
Gate-to-Source Voltage, VGS(V)
1
2
3
4
Drain-to-Source Voltage, VGS(V)
Capacitance, C(pF)
0
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-140.C
UT30N03
Normalized Effective Transient Thermal
Impedance
„
Power MOSFET
TYPICAL CHARACTERISTICS(Cont)
Normalized Thermal Transient Impedance,Junction-to-Case
2
1
Duty Cycle=0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (sec)
1
3
On-Resistance vs. Drain Current
0.07
On-Resistance, RDS(ON) (Ω)
0.06
0.05
VGS=4.5V
0.04
0.03
VGS=10V
0.02
0.01
0
0
8
16
24
32
Drain Current, ID(A)
40
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-140.C
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