Datasheet

AOK53S60
600V 53A α MOS
TM
Power Transistor
General Description
Product Summary
The AOK53S60 has been fabricated using the advanced
αMOSTM high voltage process that is designed to deliver
high levels of performance and robustness in switching
applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply designs.
VDS @ Tj,max
700V
IDM
215A
RDS(ON),max
0.07Ω
Qg,typ
59nC
Eoss @ 400V
15µJ
100% UIS Tested
100% Rg Tested
Top View
TO247
D
G
S
G
S
D
AOK53S60
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOK53S60
TO-247
Tube
240
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
AOK53S60
600
Units
V
±30
V
53
ID
33
A
Pulsed Drain Current C
IDM
215
Avalanche Current C
IAR
9.5
A
Repetitive avalanche energy C
EAR
45
mJ
Single pulsed avalanche energy G
TC=25°C
Power Dissipation B
Derate above 25oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
Junction and Storage Temperature Range
EAS
1688
mJ
520
W
4.2
100
20
-55 to 150
W/ oC
300
°C
AOK53S60
Units
PD
dv/dt
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Symbol
RθJA
Maximum Case-to-sink A
Maximum Junction-to-Case
Rev.1.0: August 2014
RθCS
RθJC
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V/ns
°C
40
°C/W
0.5
0.24
°C/W
°C/W
Page 1 of 6
AOK53S60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
Units
600
-
-
650
700
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
-
-
1
VDS=480V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
2.5
3.2
3.8
nΑ
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=26.5A, TJ=25°C
-
0.058
0.07
Ω
VGS=10V, ID=26.5A, TJ=150°C
-
0.155
0.185
Ω
VSD
Diode Forward Voltage
IS=26.5A,VGS=0V, TJ=25°C
-
0.84
-
V
IS
Maximum Body-Diode Continuous Current
-
-
53
A
ISM
Maximum Body-Diode Pulsed Current
-
-
215
A
-
3034
-
pF
-
222
-
pF
-
170
-
pF
-
524
-
pF
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
VGS=0V, VDS=100V, f=1MHz
-
3
-
pF
VGS=0V, VDS=0V, f=1MHz
-
1.8
-
Ω
-
59
-
nC
-
17
-
nC
nC
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=10V, VDS=480V, ID=26.5A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
19
-
tD(on)
Turn-On DelayTime
-
48
-
ns
tr
Turn-On Rise Time
-
102
-
ns
tD(off)
Turn-Off DelayTime
-
215
-
ns
tf
trr
Turn-Off Fall Time
VGS=10V, VDS=400V, ID=26.5A,
RG=25Ω
-
122
-
ns
IF=26.5A,dI/dt=100A/µs,VDS=400V
-
664
-
ns
A
µC
Irm
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=26.5A,dI/dt=100A/µs,VDS=400V
-
36
-
Qrr
Body Diode Reverse Recovery Charge IF=26.5A,dI/dt=100A/µs,VDS=400V
-
14
-
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=7.5A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: August 2014
www.aosmd.com
Page 2 of 6
AOK53S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
10V
6.5V
80
80
6V
40
5.5V
20
5V
0
5
5.5V
40
5V
20
VGS=4.5V
VGS=4.5V
0
6V
60
ID (A)
ID (A)
60
6.5V
10
15
0
0
20
1000
10
15
20
0.12
-55°C
VDS=20V
100
0.10
RDS(ON) (Ω)
10
ID(A)
5
VDS (Volts)
Figure 2: On-Region [email protected]°C
VDS (Volts)
Figure 1: On-Region [email protected]°C
125°C
1
0.08
VGS=10V
0.06
25°C
0.04
0.1
0.02
0.01
0
2
4
6
8
0
10
VGS(Volts)
Figure 3: Transfer Characteristics
40
60
80
100
120
ID (A)
Figure 4: On-Resistance vs. Drain Current and Gate
Voltage
1.2
3
VGS=10V
ID=26.5A
2.5
BVDSS (Normalized)
Normalized On-Resistance
20
2
1.5
1
1.1
1
0.9
0.5
0
-100
-50
0
50
100
150
200
0.8
-100
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
Rev.1.0: August 2014
www.aosmd.com
-50
0
50
100
150
200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
Page 3 of 6
AOK53S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1E+02
125°C
1E+01
VDS=480V
ID=26.5A
12
1E+00
25°C
VGS (Volts)
IS (A)
1E-01
1E-02
9
6
1E-03
3
1E-04
0
1E-05
0.0
0.2
0.4
0.6
0.8
0
1.0
100000
40
60
80
100
30
25
10000
Ciss
20
Eoss(uJ)
Capacitance (pF)
20
Qg (nC)
Figure 8: Gate-Charge Characteristics
VSD (Volts)
Figure 7: Body-Diode Characteristics (Note E)
1000
Coss
100
Eoss
15
10
Crss
10
5
0
1
0
100
200
300
400
500
600
0
100
200
300
400
500
600
VDS (Volts)
Figure 10: Coss stroed Energy
VDS (Volts)
Figure 9: Capacitance Characteristics
1000
ID (Amps)
100
10µs
RDS(ON)
limited
100µs
10
1ms
DC
10ms
1
0.1
TJ(Max)=150°C
TC=25°C
0.01
1
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOK53S60 (Note F)
Rev.1.0: August 2014
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Page 4 of 6
AOK53S60
1800
60
1500
50
Current rating ID(A)
EAS(mJ)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
900
600
300
40
30
20
10
0
0
25
50
75
100
125
150
175
0
TCASE (°C)
Figure 12: Avalanche energy
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note B)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.24°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PPDD
0.01
TTonon
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
TT
0.1
1
10
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOK53S60 (Note F)
Rev.1.0: August 2014
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Page 5 of 6
AOK53S60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.1.0: August 2014
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6