AOK53S60 600V 53A α MOS TM Power Transistor General Description Product Summary The AOK53S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700V IDM 215A RDS(ON),max 0.07Ω Qg,typ 59nC Eoss @ 400V 15µJ 100% UIS Tested 100% Rg Tested Top View TO247 D G S G S D AOK53S60 Orderable Part Number Package Type Form Minimum Order Quantity AOK53S60 TO-247 Tube 240 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C AOK53S60 600 Units V ±30 V 53 ID 33 A Pulsed Drain Current C IDM 215 Avalanche Current C IAR 9.5 A Repetitive avalanche energy C EAR 45 mJ Single pulsed avalanche energy G TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt Junction and Storage Temperature Range EAS 1688 mJ 520 W 4.2 100 20 -55 to 150 W/ oC 300 °C AOK53S60 Units PD dv/dt TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA Maximum Case-to-sink A Maximum Junction-to-Case Rev.1.0: August 2014 RθCS RθJC www.aosmd.com V/ns °C 40 °C/W 0.5 0.24 °C/W °C/W Page 1 of 6 AOK53S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C Units 600 - - 650 700 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V - - 1 VDS=480V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.5 3.2 3.8 nΑ V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=26.5A, TJ=25°C - 0.058 0.07 Ω VGS=10V, ID=26.5A, TJ=150°C - 0.155 0.185 Ω VSD Diode Forward Voltage IS=26.5A,VGS=0V, TJ=25°C - 0.84 - V IS Maximum Body-Diode Continuous Current - - 53 A ISM Maximum Body-Diode Pulsed Current - - 215 A - 3034 - pF - 222 - pF - 170 - pF - 524 - pF DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz VGS=0V, VDS=100V, f=1MHz - 3 - pF VGS=0V, VDS=0V, f=1MHz - 1.8 - Ω - 59 - nC - 17 - nC nC SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=26.5A Qgs Gate Source Charge Qgd Gate Drain Charge - 19 - tD(on) Turn-On DelayTime - 48 - ns tr Turn-On Rise Time - 102 - ns tD(off) Turn-Off DelayTime - 215 - ns tf trr Turn-Off Fall Time VGS=10V, VDS=400V, ID=26.5A, RG=25Ω - 122 - ns IF=26.5A,dI/dt=100A/µs,VDS=400V - 664 - ns A µC Irm Body Diode Reverse Recovery Time Peak Reverse Recovery Current IF=26.5A,dI/dt=100A/µs,VDS=400V - 36 - Qrr Body Diode Reverse Recovery Charge IF=26.5A,dI/dt=100A/µs,VDS=400V - 14 - A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=7.5A, VDD=150V, Starting TJ=25°C H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Wavesoldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: August 2014 www.aosmd.com Page 2 of 6 AOK53S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 10V 6.5V 80 80 6V 40 5.5V 20 5V 0 5 5.5V 40 5V 20 VGS=4.5V VGS=4.5V 0 6V 60 ID (A) ID (A) 60 6.5V 10 15 0 0 20 1000 10 15 20 0.12 -55°C VDS=20V 100 0.10 RDS(ON) (Ω) 10 ID(A) 5 VDS (Volts) Figure 2: On-Region Characteristics@125°C VDS (Volts) Figure 1: On-Region Characteristics@25°C 125°C 1 0.08 VGS=10V 0.06 25°C 0.04 0.1 0.02 0.01 0 2 4 6 8 0 10 VGS(Volts) Figure 3: Transfer Characteristics 40 60 80 100 120 ID (A) Figure 4: On-Resistance vs. Drain Current and Gate Voltage 1.2 3 VGS=10V ID=26.5A 2.5 BVDSS (Normalized) Normalized On-Resistance 20 2 1.5 1 1.1 1 0.9 0.5 0 -100 -50 0 50 100 150 200 0.8 -100 Temperature (°C) Figure 5: On-Resistance vs. Junction Temperature Rev.1.0: August 2014 www.aosmd.com -50 0 50 100 150 200 TJ (oC) Figure 6: Break Down vs. Junction Temperature Page 3 of 6 AOK53S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1E+02 125°C 1E+01 VDS=480V ID=26.5A 12 1E+00 25°C VGS (Volts) IS (A) 1E-01 1E-02 9 6 1E-03 3 1E-04 0 1E-05 0.0 0.2 0.4 0.6 0.8 0 1.0 100000 40 60 80 100 30 25 10000 Ciss 20 Eoss(uJ) Capacitance (pF) 20 Qg (nC) Figure 8: Gate-Charge Characteristics VSD (Volts) Figure 7: Body-Diode Characteristics (Note E) 1000 Coss 100 Eoss 15 10 Crss 10 5 0 1 0 100 200 300 400 500 600 0 100 200 300 400 500 600 VDS (Volts) Figure 10: Coss stroed Energy VDS (Volts) Figure 9: Capacitance Characteristics 1000 ID (Amps) 100 10µs RDS(ON) limited 100µs 10 1ms DC 10ms 1 0.1 TJ(Max)=150°C TC=25°C 0.01 1 10 100 1000 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area for AOK53S60 (Note F) Rev.1.0: August 2014 www.aosmd.com Page 4 of 6 AOK53S60 1800 60 1500 50 Current rating ID(A) EAS(mJ) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 900 600 300 40 30 20 10 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 12: Avalanche energy 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note B) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.24°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PPDD 0.01 TTonon Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 TT 0.1 1 10 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOK53S60 (Note F) Rev.1.0: August 2014 www.aosmd.com Page 5 of 6 AOK53S60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.1.0: August 2014 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6