UNISONIC TECHNOLOGIES CO., LTD UT4450 Power MOSFET 7.0A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT4450 is an N-channel MOSFET. it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge. The UTC UT4450 is suitable for PWM applications or use as a load switch. FEATURES * RDS(ON)<30mΩ @ VGS=10V, ID=7A RDS(ON)<38mΩ @ VGS=4.5V, ID=5A * High switching speed * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Note: UT4450G-S08-R Pin Assignment: G: Gate Package D: Drain SOP-8 S: Source 1 S 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-898.E UT4450 Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-898.E UT4450 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Continuous TA=25°C ID 7 A Drain Current Pulsed (Note 2) IDM 28 A Avalanche Current (Note 2) IAS 14 A Avalanche Energy L=0.1mH (Note 2) EAS 10 mJ Power Dissipation (Note 3) TA=25°C PD 3.1 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. 3. Based on TJ(MAX)=150°C, using≤10s. THERMAL CHARACTERISTICS PARAMETER SYMBOL θJA θJC Junction to Ambient Junction to Case RATINGS 90 40.3 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage SYMBOL Static Drain-Source On-State Resistance RDS(ON) BVDSS IDSS IGSS VGS(TH) TEST CONDITIONS ID=250µA, VGS=0V VDS=40V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 40 VDS=VGS, ID=250µA VGS=10V, ID=7.0A VGS=4.5V, ID=5.0A 1.0 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=20V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 2) Total Gate Charge QG VGS=10V, VDS=20V, ID=7.0A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDS=20V, VGS=10V, RGEN=3Ω, Rise Time tR RL=2.8Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Drain-Source Diode Forward Voltage VSD IS=1.0A, VGS=0V Body Diode Reverse Recovery Time trr IF=7.0A, dI/dt=100A/µs Body Diode Reverse Recovery Charge Qrr UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT V 1 µA +100 nA -100 nA 3.0 30 38 V mΩ mΩ 516 82 43 pF pF pF 8.9 2.4 1.4 6.4 3.6 16.2 6.6 nC nC nC ns ns ns ns 3.5 1 18 10 A V ns nC 3 of 8 QW-R502-898.E UT4450 Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG 90% RD VGS VDS 10V 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR td(OFF) tF tOFF Resistive Switching Waveforms 4 of 8 QW-R502-898.E UT4450 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-898.E UT4450 Power MOSFET TYPICAL CHARACTERISTICS Transfer Characteristics On-Region Characteristics 40 40 5V VDS=5V 4.5V Drain Current,ID (A) Drain Current,-ID (A) 10V 30 4V 20 10 30 20 10 VGS=3.5V 125℃ 25℃ 0 0 1 3 4 2 Drain to Source Voltage,VDS (V) 5 1 2 3 4 5 Gate to Source Voltage,VGS (V) 6 Reverse Drain Current,IS (A) Drain to Source On-Resistance, RDS(ON) (mΩ) Normalized On-Resistance Drain to Source On-Resistance, RDS(ON) (mΩ) 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-898.E UT4450 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Capacitance (pF) Gate to Source Voltage,VGS (V) 100.0 Maximum Forward Biased Safe Operating Area (Note E) 10000 Single Pulse Power Rating Junctionto-Ambient (Note E) TA=25℃ 10.0 10μs RDS(ON) Limited 1000 100μs 100 1ms 1.0 10ms DC 1 10 100 Drain to Source Voltage,VDS (V) 10 1 0.001 0.01 1 0.1 10 Pulse Width (s) 100 1000 Normalized Transient Thermal Resistance,ZθJA 0.1 0.1 TJ(Max)=150℃ TA=25℃ 10s UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-898.E UT4450 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-898.E