Datasheet

UNISONIC TECHNOLOGIES CO., LTD
6N65Z-Q
Power MOSFET
6.2A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 6N65Z-Q is a high voltage power MOSFET designed
to have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications of switching power supplies and adaptors.

FEATURES
* RDS(ON) = 1.85Ω @VGS = 10V, ID=3.1A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N65ZL-TF3-T
6N65ZG-TF3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-220F
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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QW-R502-978, A
6N65Z-Q

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±20
V
Avalanche Current (Note 2)
IAR
6.2
A
Continuous Drain Current
ID
6.2
A
Pulsed Drain Current (Note 2)
IDM
24.8
A
100
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
13
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
Power Dissipation
PD
40
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L = 14mH, IAS = 3.7A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATING
62.5
3.2
UNIT
°C/W
°C/W
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QW-R502-978. A
6N65Z-Q

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
650
Drain-Source Leakage Current
IDSS
VDS = 650V, VGS = 0V
10
5
Forward
VGS = 20V, VDS = 0V
Gate- Source Leakage Current
IGSS
Reverse
VGS = -20V, VDS = 0V
5
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
0.53
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 3.1A
1.7 1.85
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
750 900
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
COSS
65
80
Reverse Transfer Capacitance
CRSS
10.5 13
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
50
70
Turn-On Rise Time
tR
55
75
VDD=30V, ID =0.5A, RG =25Ω
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
150 170
Turn-Off Fall Time
tF
70
90
75
95
Total Gate Charge
QG
VDS=520V, ID=6.2A, VGS=10V
Gate-Source Charge
QGS
18
(Note 1, 2)
Gate-Drain Charge
QGD
19
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 6.2 A
1.4
Maximum Continuous Drain-Source Diode
IS
6.2
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
24.8
Forward Current
290
Reverse Recovery Time
trr
VGS = 0 V, IS = 6.2 A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
2.35
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
UNIT
V
μA
μA
μA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
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6N65Z-Q
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-978. A
6N65Z-Q

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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6N65Z-Q
Power MOSFET
Drain Current,ID (µA)
Drain Current,ID (µA)
Drain Current,ID (A)
Drain Current, ID (A)
TYPICAL CHARACTERISTICS

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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