Datasheet

UNISONIC TECHNOLOGIES CO., LTD
10N70K
Power MOSFET
10A, 700V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 10N70K is an N-channel Power MOSFET using UTC’s
advanced technology to provide customers a minimum on-state
resistance and superior switching performance, etc.
The UTC 10N70K is generally applied in high efficient DC to DC
converters, PWM motor controls and bridge circuits, etc.

FEATURES
* RDS(ON)<1.1Ω @ VGS=10V
* Low Gate Charge (Typical 44nC)
* Low CRSS ( typical 10 pF)
* High Switching Speed
* Improved dv/dt capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
10N70KL-TF1-T
10N70KG-TF1-T
TO-220F1
Note: Pin Assignment: G: Gate D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
Packing
Tube
10N70KL-TF1-T

(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TF1: TO-220F1
(3)Lead Free
(3) L: Lead Free, G: Halogen Free
MARKING INFORMATION
PACKAGE
MARKING
TO-220F1
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-A69.A
10N70K

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
10
A
Continuous
ID
10
A
Drain Current
Pulsed (Note 2)
IDM
38
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
150
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
50
W
PD
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 3mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
θJA
θJC
RATING
62.5
2.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
VGS = 0V, ID = 250μA
VDS = 700V, VGS = 0V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
MIN TYP MAX UNIT
700
1
100
-100
∆BVDSS/∆TJ ID=250µA, Referenced to 25°C
VGS(TH)
RDS(ON)
CISS
COSS
CRSS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
VDS = VGS, ID = 250μA
VGS = 10V, ID = 5A
VDS=25V, VGS=0V, f=1.0 MHz
0.7
2.0
1.0
V
µA
nA
nA
V/°C
4.0
1.1
V
Ω
1150 1712 pF
108 125 pF
10
13
pF
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10N70K

Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=325V, ID =10A, RG =25Ω
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=520V, ID=10A, VGS=10V
Gate-Source Charge
QGS
(Note 1, 2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS =10A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0 V, IS = 10A,
dIF / dt = 100 A/µs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
90
30
210
46
95
8
14
420
4.2
100
90
300
105
110
ns
ns
ns
ns
nC
nC
nC
1.4
V
10
A
38
A
ns
µC
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10N70K

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A69.A
10N70K

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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QW-R502-A69.A
10N70K
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)

200
150
100
50
200
150
100
50
0
0
0
0.7
2.1 2.8
1.4
3.5 4.2
Gate Threshold Voltage, VTH (V)
Drain Current, ID (A)
Drain-Source Diode Forward
Current, IS (A)
0
200
600
800 1000
400
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A69.A
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