UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT40N08 Power MOSFET 40A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTT40N08 power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness FEATURES * RDS(ON) < 45mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT40N08L-TN3-R UTT40N08G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel MARKING INFORMATION PACKAGE MARKING TO-252 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-A81.a UTT40N08 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 80 V ±20 V 40 A Continuous Drain Current Pulsed (Note 1) 160 A TC=25°C 65 PD Power Dissipation W TC=125°C 1.92 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL VDSS VGSS ID IDM SYMBOL θJA θJC RATINGS 62 1.92 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS =80 V, VGS =0 V, TJ=25°C Forward VGS=+20V Gate- Source Leakage Current IGSS Reverse VGS=-20V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A DYNAMIC PARAMETERS Input Capacitance CISS VDS =25 V, VGS =0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS =25V, VGS =10 V, ID =40A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDS =30 V, ID=1 A, VGS =10V, RG =1.7 Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS VD=VG=0V , VS=1.3V Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD TJ=25°C, IS=40A, VGS=0V Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 80 2.0 35 1 +100 -100 V µA nA nA 4.0 45 V mΩ 2800 320 140 pF pF pF 200 19 14 66 52 350 90 78 70 380 110 nC nC nC ns ns ns ns 40 160 1.3 A A V 2 of 3 QW-R502-A81.a UTT40N08 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-A81.a